Droplet recipe creation method, pattern formation method, and manufacturing method of semiconductor device
According to one embodiment, a method for generating a droplet recipe used in imprint lithography includes acquiring feature data for a pattern shape that has been formed on a template. The feature data is acquired by measuring the pattern shape of a pattern that has been formed on the template. A dispensing amount for resin to be dispensed on a substrate for filling of the pattern of the template during imprinting of the pattern of the template on the substrate is calculated, based on the acquired feature data. A dispensing amount for resin corresponding to a target thickness of a residual film formed on the substrate during the imprinting of the pattern of the template on the substrate is also calculated. A droplet recipe for dispensing of resin during imprinting of the pattern of the template is then generated based on the calculated dispensing amounts.
1. A method for generating a droplet recipe used in imprint lithography, the method comprising:
acquiring feature data for a pattern shape formed on a template by measuring the pattern shape of a pattern formed on the template;
calculating, based on the acquired feature data, a dispensing amount for resin to be dispensed on a substrate for filling of the pattern of the template during imprinting of the pattern of the template on the substrate;
calculating a dispensing amount for resin corresponding to a target thickness of a residual film portion formed on the substrate during the imprinting of the pattern of the template on the substrate;
generating, based on the calculated dispensing amounts, a droplet recipe for dispensing of resin during imprinting of the pattern of the template; and
generating an updated droplet recipe based on measurement of a transferred pattern feature formed on the substrate by imprinting of the pattern of the template performed using the previously generated droplet recipe.
2. The method according to claim 1 , wherein the feature data is acquired by measuring a pattern feature on a surface of the template.
3. The method according to claim 1 , wherein the feature data is acquired by measuring a transferred pattern feature formed on the substrate by the imprinting of the pattern of the template on the substrate.
4. A method for generating a droplet recipe used in imprint lithography, the method comprising:
acquiring feature data for a pattern shape formed on a template by measuring the pattern shape of a pattern formed on the template;
calculating, based on the acquired feature data, a dispensing amount for resin to be dispensed on a substrate for filling of the pattern of the template during imprinting of the pattern of the template on the substrate;
calculating a dispensing amount for resin corresponding to a target thickness of a residual film portion formed on the substrate during the imprinting of the pattern of the template on the substrate;
generating, based on the calculated dispensing amounts, a droplet recipe for dispensing of resin during imprinting of the pattern of the template;
measuring a transferred pattern feature formed on the substrate by imprinting of the pattern of the template; and
correcting the feature data based on the measurement of the transferred pattern on the substrate.
5. The method according to claim 4 , wherein the feature data is acquired by measuring a cross-sectional shape of a transferred pattern feature formed on the substrate.
6. A method for generating a droplet recipe used in imprint lithography, the method comprising:
acquiring feature data for a pattern shape formed on a template by measuring the pattern shape of a pattern formed on the template;
calculating, based on the acquired feature data, a dispensing amount for resin to be dispensed on a substrate for filling of the pattern of the template during imprinting of the pattern of the template on the substrate;
calculating a dispensing amount for resin corresponding to a target thickness of a residual film portion formed on the substrate during the imprinting of the pattern of the template on the substrate;
generating, based on the calculated dispensing amounts, a droplet recipe for dispensing of resin during imprinting of the pattern of the template;
measuring a thickness of the residual film portion formed on the substrate by imprinting of the template using the droplet recipe; and
generating an updated droplet recipe based on the measured thickness of the residual film portion.
7. The method according to claim 6 , wherein the thickness of the residual film portion is measured at a plurality of points.
8. A pattern forming method, comprising:
performing imprinting of a template pattern on a target film using a droplet recipe, the template pattern being formed in a template; and
processing the target film using the imprinted template pattern, wherein
the droplet recipe is generated by:
acquiring feature data for the template pattern formed on the template by measuring a pattern shape of the template pattern;
calculating, based on the acquired feature data, a dispensing amount for resin to be dispensed for filling of the template pattern during the imprinting of the template pattern;
calculating a dispensing amount for resin corresponding to a target thickness of a residual film portion formed during the imprinting of the template pattern;
generating, based on the calculated dispensing amounts, the droplet recipe for dispensing of resin for the imprinting of the template pattern;
measuring a transferred pattern feature formed by imprinting of the template pattern on a substrate; and
correcting the feature data based on the measurement of the transferred pattern on the substrate.
9. The pattern forming method according to claim 8 , wherein the feature data is acquired by measuring a pattern feature on a surface of the template.
10. The pattern forming method according to claim 8 , wherein the feature data is acquired by measuring a transferred pattern feature formed by the imprinting of the template pattern.
11. The pattern forming method according to claim 8 , further comprising:
measuring a thickness of the residual film portion formed on a substrate by imprinting of the template pattern.
12. The pattern forming method according to claim 8 , further comprising:
transferring the template pattern into the target film by etching of the target film using the imprinted template pattern as a mask.
13. The pattern forming method according to claim 8 , wherein the template is quartz glass.
14. A manufacturing method of a semiconductor device, the method comprising:
forming a processing target film on a semiconductor substrate;
performing imprinting of a template pattern on the processing target film using a droplet recipe, the template pattern being formed in a template; and
processing the target film using the imprinted template pattern as a mask, wherein the droplet recipe is generated by:
acquiring feature data for the template pattern formed on the template by measuring a pattern shape of the template pattern;
calculating, based on the acquired feature data, a dispensing amount for resin to be dispensed for filling of the template pattern during the imprinting of the template pattern;
calculating a dispensing amount for resin corresponding to a target thickness of a residual film portion formed during the imprinting of the template pattern;
generating, based on the calculated dispensing amounts, the droplet recipe for dispensing of resin for the imprinting of the template pattern;
measuring a transferred pattern feature formed by imprinting of the template pattern on the semiconductor substrate; and
correcting the feature data based on the measurement of the transferred pattern on the semiconductor substrate.
15. The manufacturing method according to claim 14 , wherein the feature data is acquired by measuring a pattern feature on a surface of the template.
16. The manufacturing method according to claim 14 , wherein the feature data is acquired by measuring a transferred pattern feature formed by the imprinting of the template pattern.
17. The manufacturing method according to claim 14 , wherein the semiconductor substrate is a silicon wafer.