Radiation-emitting semiconductor component and method for producing radiation-emitting semiconductor component
A radiation-emitting semiconductor device ( 1 ) is specified, comprising a semiconductor body ( 2 ) having an active region ( 20 ) provided for generating radiation, a carrier ( 3 ) on which the semiconductor body is arranged and an optical element ( 4 ), wherein the optical element is attached to the semiconductor body by a direct bonding connection. Furthermore, a method for producing of radiation-emitting semiconductor devices is specified.
1. A radiation-emitting semiconductor device comprising:
a semiconductor body having an active region provided for generating radiation;
a carrier on which the semiconductor body is arranged; and an optical element, wherein:
the optical element is attached to the semiconductor body with a direct bonding connection,
the active region is divided into a plurality of segments and the optical element extends continuously over the plurality of segments, and
the optical element has one or more optical segments for each segment.
2. The radiation-emitting semiconductor device according to claim 1 , wherein the carrier and the optical element terminate flush with a side surface delimiting the radiation-emitting semiconductor device.
3. The radiation-emitting semiconductor device according to claim 1 , wherein the segments are externally electrically controlled independently of one another.
4. The radiation-emitting semiconductor device according to claim 1 , wherein the optical segments are each formed identically in terms of beam shaping.
5. The radiation-emitting semiconductor device according to claim 1 , wherein the optical segments differ from one another in terms of beam shaping.
6. The radiation-emitting semiconductor device according to claim 1 , wherein a mirror region is arranged between the active region and the optical element.
7. The radiation-emitting semiconductor device according to claim 6 , wherein the mirror region is arranged between the active region and direct bonding connection.
8. The radiation-emitting semiconductor device according to claim 6 , wherein the mirror region is arranged between the direct bonding connection and the optical element.
9. The radiation-emitting semiconductor device according to claim 1 , wherein:
a contact for external electrical contacting of the radiation-emitting semiconductor device is arranged on a side of the semiconductor body facing the optical element;
the direct bonding connection is adjacent to an auxiliary bonding layer on a side facing the semiconductor body; and
the auxiliary bonding layer completely covers the contact and in places has a greater vertical extent than the contact.
10. The radiation-emitting semiconductor device according to claim 1 , wherein the radiation-emitting semiconductor device has two contacts for external electrical contacting on a side of the carrier facing away from the optical element.
11. A radiation-emitting semiconductor device comprising:
a semiconductor body having an active region provided for generating radiation;
a carrier on which the semiconductor body is arranged; and an optical element, wherein:
the optical element is attached to the semiconductor body with a direct bonding connection;
a contact for external electrical contacting of the radiation-emitting semiconductor device is arranged on a side of the semiconductor body facing the optical element;
the direct bonding connection is adjacent to an auxiliary bonding layer on a side facing the semiconductor body; and
the auxiliary bonding layer completely covers the contact and in places has a greater vertical extent than the contact.
12. The radiation-emitting semiconductor device according to claim 11 , wherein the direct bonding connection is formed between the auxiliary bonding layer and a further auxiliary bonding layer.
13. The radiation-emitting semiconductor device according to claim 12 , wherein the auxiliary bonding layer and the further auxiliary bonding layer each contain an oxide.
14. A radiation-emitting semiconductor device comprising:
a semiconductor body having an active region provided for generating radiation;
a carrier on which the semiconductor body is arranged; and an optical element, wherein:
the optical element is attached to the semiconductor body with a direct bonding connection,
the active region is divided into a plurality of segments and the optical element extends continuously over the plurality of segments,
a mirror region is arranged between the active region and the optical element.