Luminescent nanostrucure, and color conversion panel and electronic device including the same
A color conversion panel that includes a color conversion layer including one or more color conversion regions, and optionally, a partition wall defining the regions of the color conversion layer, and a display device including the same. The color conversion region includes a first region corresponding to a first pixel, and the first region includes a first composite including a matrix and a plurality of luminescent nanostructures dispersed in the matrix. The luminescent nanostructures include a first semiconductor nanocrystal including a Group III-V compound and a second semiconductor nanocrystal including a zinc chalcogenide. The Group III-V compound includes indium, phosphorus, and optionally, zinc or gallium, or zinc and gallium, and the zinc chalcogenide includes zinc, selenium, and sulfur. The luminescent nanostructures do not include cadmium. The luminescent nanostructures further include fluorine, and in the luminescent nanostructures, a mole ratio of fluorine to indium is greater than or equal to about 0.05:1.
1. A color conversion panel comprising:
a color conversion layer including a color conversion region, and optionally, a partition wall defining each region of the color conversion layer,
wherein the color conversion region comprises a first region corresponding to a first pixel, and the first region comprises a first composite that is configured to emit green light and includes a matrix and a plurality of luminescent nanostructures dispersed in the matrix,
wherein the plurality of luminescent nanostructures comprises a first semiconductor nanocrystal comprising a Group III-V compound and a second semiconductor nanocrystal comprising a zinc chalcogenide,
the Group III-V compound comprises indium and phosphorus, and optionally zinc or gallium, or zinc and gallium,
the zinc chalcogenide comprises zinc, selenium, and sulfur,
the plurality of luminescent nanostructures do not include cadmium, and
the plurality of luminescent nanostructures further comprise fluorine, and
a mole ratio of fluorine to indium is greater than or equal to 0.05:1 and less than or equal to 1:1, a mole ratio of sulfur to selenium of greater than or equal to 2:1, and a mole ratio of selenium to a total moles of selenium and sulfur of less than or equal to 0.3:1.
2. The color conversion panel of claim 1 , wherein in the plurality of the luminescent nanostructures, the mole ratio of selenium to a total moles of selenium and sulfur is greater than or equal to about 0.26:1.
3. The color conversion panel of claim 1 , wherein the luminescent plurality nanostructures are configured to exhibit a full width at half maximum of less than or equal to about 42 nanometers.
4. The color conversion panel of claim 1 , wherein the plurality of luminescent nanostructures exhibits an ultraviolet-visible absorption spectrum curve that has a positive differential coefficient value at 450 nm.
5. The color conversion panel of claim 1 , wherein the plurality of the luminescent nanostructures comprises a mole ratio of sulfur to selenium of greater than or equal to about 2.5:1.
6. The color conversion panel of claim 1 , wherein in the plurality of the luminescent nanostructures, a mole ratio of selenium to indium is less than or equal to about 10:1, and a mole ratio of a sum of selenium and sulfur to indium is less than or equal to about 19.
7. The color conversion panel of claim 1 , wherein the first composite exhibits a light conversion efficiency of greater than or equal to about 30%, or an incident light absorption of greater than or equal to about 85%, as defined by the following equations, respectively:
[ A /( B−B ′)]×100=light conversion efficiency (%)
[( B−B ′)/ B]× 100=incident light absorption (%)
A: light dose of green light emitted from the composite
B: light does of an incident light
B′: light dose having passed through the first composite.
8. The color conversion panel of claim 1 , wherein as the first composite is irradiated with an incident light of a wavelength of about 458 nanometers, a tail percentage defined by the following equation is less than or equal to about 15%:
A tail percentage (%)= [S2/S1]×100
S1: a total area of a maximum photoluminescent peak of the first composite, and
S2: an area of the maximum photoluminescent peak of the first composite in a wavelength region of greater than or equal to about 580 nanometers.
9. A nanostructure population of luminescent nanostructures,
wherein the luminescent nanostructures comprise mole ratios a first semiconductor nanocrystal including a Group III-V compound and a second semiconductor nanocrystal including a zinc chalcogenide,
wherein the Group III-V compound comprises indium and phosphorus, and optionally zinc or gallium, or zinc and gallium,
the zinc chalcogenide comprises zinc, selenium, and sulfur,
wherein the plurality of the luminescent nanostructures include a mole ratio of sulfur to selenium of greater than or equal to 2:1,
wherein the plurality of luminescent nanostructures further comprises fluorine, and a mole ratio of fluorine to indium of greater than or equal to about 0.05:1 and less than or equal to 1:1, and a mole ratio of selenium to a total moles of selenium and sulfur of less than or equal to 0.3:1, and
wherein the plurality of luminescent nanostructures emit green light.
10. The nanostructure population of claim 9 , wherein the luminescent nanostructure exhibits an ultraviolet-visible absorption spectrum curve that has a positive differential coefficient value at 450 nm, and an absolute quantum yield is greater than or equal to about 84%.
11. The nanostructure population of claim 9 , wherein in a photoluminescence excitation analysis of the luminescent nanostructures as the wavelength of incident light is varied from about 440 nm to about 480 nm, a change in a full width at half maximum of a luminescent peak is less than or equal to about 20 nanometers.
12. The nanostructure population of claim 9 , wherein the luminescent nanostructures include a mole ratio of fluorine to indium of greater than or equal to about 0.1 and less than or equal to about 0.7:1.
13. The nanostructure population of claim 9 , wherein the luminescent nanostructures have a core shell structure including a core and a shell disposed on the core,
wherein the core comprises the first semiconductor nanocrystal, and the shell comprises the second semiconductor nanocrystal.
14. The nanostructure population of claim 9 , wherein in the luminescent nanostructures,
a mole ratio of sulfur to selenium is greater than or equal to about 2.5:1,
a mole ratio of sulfur to indium is greater than or equal to about 3:1 to less than or equal to about 20:1, and
a mole ratio of selenium to indium is less than or equal to about 10:1.
15. The nanostructure population of claim 9 , wherein an average particle size of the luminescent nanostructures is less than or equal to about 6.5 nanometers.
16. The nanostructure population of claim 9 , wherein the Group III-V compound comprises indium and phosphorus, and zinc or gallium, or zinc and gallium.
17. An ink composition comprising a liquid vehicle; and the nanostructure population of claim 9 .
18. An electronic device including the nanostructure population of claim 9 .
19. A method of producing the nanostructure population of claim 9 , which comprises:
heating a zinc compound in the presence of an organic ligand in an organic solvent in a reaction vessel, and adding a fluorine containing compound to the vessel to prepare a reaction medium including a zinc precursor and a fluorine source, wherein the adding of the fluorine comprises an amount of fluorine is greater than or equal to 0.2 moles and less than or equal to 10 moles per mole of indium in the first semiconductor nanocrystals;
heating the reaction medium to a temperature greater than or equal to 250° C.;
adding the first semiconductor nanocrystals, to the heated reaction medium followed by the addition of a selenium precursor, and a sulfur precursor to the reaction medium and carrying out a reaction to form the luminescent nanoparticles.
20. The method of claim 19 , wherein
the sulfur precursor comprises two or more sulfur containing compounds, and one of the sulfur containing compounds comprises a C1 to C30 thiol compound, and
wherein the sulfur precursor is added to the reaction medium during the selenium precursor is present in the reaction medium.