IP Library › Granted Patent US 12,503,646

Granted Patent B2

US 12,503,646 · App. 17/689,061 · Granted Dec 23, 2025

Quantum dot device, film having multilayered structure, and electronic device

Inventors: Eun Joo Jang (Suwon-si, KR); Kwanghee Kim (Seoul, KR); Seungjin Lee (Toronto, CA); Ted Sargent (Toronto, CA)

Assignees: SAMSUNG ELECTRONICS CO., LTD.; SAMSUNG DISPLAY CO., LTD.; THE GOVERNING COUNCIL OF THE UNIVERSITY OF TORONTO

C09K11/54 C01B19/04 C01G9/02 C01G9/08 C09K11/55 C09K11/883 H10K71/12 H10K85/50 B82Y20/00 B82Y40/00 C01P2004/64 C01P2006/60 H10K50/11 H10K50/115 H10K50/156 H10K50/171 H10K71/40 H10K2101/30 H10K2101/40 H10K2102/00

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Quick Facts

Patent No.: US 12,503,646
App. No.: 17/689,061
Granted: Dec 23, 2025
Kind: B2

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Abstract

A quantum dot device, a method of manufacturing the same, a thin film having a multilayered structure, and an electronic device including the same. The quantum dot device includes a first electrode and a second electrode, a quantum dot layer disposed between the first electrode and the second electrode, and a hole transport layer disposed between the quantum dot layer and the first electrode, wherein the hole transport layer includes a first hole transport layer including a three-dimensional structure perovskite thin film and a second hole transport layer including a two-dimensional structure perovskite thin film.

Claims (148)

1 . A quantum dot device, comprising

a first electrode and a second electrode,

a quantum dot layer disposed between the first electrode and the second electrode, and

a hole transport layer disposed between the quantum dot layer and the first electrode,

wherein the hole transport layer comprises

a first hole transport layer comprising a three-dimensional structure perovskite thin film, and

a second hole transport layer comprising a two-dimensional structure perovskite thin film,

wherein an energy bandgap of the first hole transport layer is in a range of about 2.0 electronvolts to about 2.4 electronvolts, and

an energy bandgap of the second hole transport layer is in a range of about 2.5 electronvolts to about 4.0 electronvolts.

2 . The quantum dot device of claim 1 , wherein the three-dimensional structure perovskite thin film comprises a perovskite compound represented by Chemical Formula 1:

AMX 3 Chemical Formula 1

wherein, in Chemical Formula 1,

A is an ammonium cation having a C1 or C2 alkyl group, an ammonium cation having a C1 or C2 haloalkyl group, an ammonium cation having a C1 or C2 cyanoalkyl group, an ammonium cation having a C1 or C2 alkoxy group, a formamidinium cation, a halogen-substituted formamidinium cation, an alkali metal ion, or a combination thereof,

M is a transition metal, a rare earth metal, or a combination thereof, and

X is a halide ion, a combination of two or more different halide ions, CNS − , PF 6 − , or BF 4 − .

3 . The quantum dot device of claim 2 , wherein the ammonium cation comprises a cation represented by Chemical Formula 1a:

wherein, in Chemical Formula 1a,

R 11 , R 12 , R 13 , and R 14 are each independently hydrogen, a halogen, a methyl group, an ethyl group, a methoxy group, or an ethoxy group.

4 . The quantum dot device of claim 1 , wherein the two-dimensional structure perovskite thin film comprises a perovskite compound represented by Chemical Formula 2:

AA′MX (4-n) X′ n Chemical Formula 2

wherein, in Chemical Formula 2,

A′ is an organic ammonium cation, an organic amidinium cation, an organic phosphonium cation, an organic sulfonium cation, or a derivative thereof, wherein the organic ammonium cation, the organic phosphonium cation, or the organic sulfonium cation comprises a substituted or unsubstituted C3 to C30 alkyl group, a substituted or unsubstituted C3 to C30 alkoxy group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 aralkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, or a substituted or unsubstituted C2 to C30 heteroaryl group,

M is a transition metal, a rare earth metal, or a combination thereof,

X is a halide ion, a combination of two or more different halide ions, CNS − , PF 6 − , or BF 4 − ,

X′ is a halide ion, and

n is greater than 0 and less than 4.

5 . The quantum dot device of claim 4 , wherein

the organic ammonium cation is an amine cation, and

the amine is a primary, secondary, or tertiary aliphatic amine.

6 . The quantum dot device of claim 5 , wherein

the organic ammonium cation is an amine cation, and

the amine is an aromatic amine or a non-aromatic heterocyclic amine.

7 . The quantum dot device of claim 5 , wherein the organic ammonium cation comprises a cation represented by Chemical Formula 2a:

wherein, in Chemical Formula 2a,

R 21 , R 22 , R 23 , and R 24 are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 aralkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, or a substituted or unsubstituted C2 to C30 heteroaryl group, and

at least one of R 21 , R 22 , R 23 , or R 24 is a substituted or unsubstituted C3 to C30 alkyl group, a substituted or unsubstituted C3 to C30 alkoxy group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 aralkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, or a substituted or unsubstituted C2 to C30 heteroaryl group.

8 . The quantum dot device of claim 5 , wherein the organic ammonium cation comprises a cation represented by Chemical Formula 2aa:

wherein, in Chemical Formula 2aa,

R 21a is a substituted or unsubstituted C3 to C30 alkyl group, a substituted or unsubstituted C3 to C30 alkoxy group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 aralkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, or a substituted or unsubstituted C2 to C30 heteroaryl group.

9 . The quantum dot device of claim 5 , wherein the organic amidinium cation comprises a cation represented by Chemical Formula 2b:

wherein, in Chemical Formula 2b,

R 51 to R 54 are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 aralkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, or a substituted or unsubstituted C2 to C30 heteroaryl group,

R 55 is hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 aralkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 heteroaryl group or NR x R y , wherein R x to R y are each independently hydrogen or a substituted or unsubstituted C1 to C10 alkyl group, and

at least one of R 51 , R 52 , R 53 , R 54 , or R 55 is a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 alkoxy group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 aralkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, or a substituted or unsubstituted C2 to C30 heteroaryl group.

10 . The quantum dot device of claim 5 , wherein the organic ammonium cation comprises a cation represented by Chemical Formula 2c:

wherein, in Chemical Formula 2c,

R 41 is hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 aralkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, or a substituted or unsubstituted C2 to C30 heteroaryl group,

Z 1 to Z 5 are each independently CR a or N, wherein R a is hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 aralkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, or a substituted or unsubstituted C2 to C30 heteroaryl group, or adjacent R a 's are linked to each other to provide a fused ring, and

n is an integer of 1 to 3.

11 . The quantum dot device of claim 5 , wherein the organic ammonium cation comprises a cation represented by Chemical Formula 2d:

wherein, in Chemical Formula 2c,

Y 1 is CR a R b , NR c , O, S, Se, Te, or C(═O), wherein R a , R b , and R c are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 aralkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, or a substituted or unsubstituted C2 to C30 heteroaryl group,

R 51 is hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 aralkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, or a substituted or unsubstituted C2 to C30 heteroaryl group,

Z 1 to Z 3 are each independently CR x or N, wherein R x is hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 aralkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, or a substituted or unsubstituted C2 to C30 heteroaryl group, and

Y 1 is CR a R b or NR c , and when Z 1 to Z 3 are CR x , two adjacent ones of R a or R b , R c , and R x are linked to each other to provide a ring.

12 . The quantum dot device of claim 5 , wherein the organic ammonium cation comprises a cation represented by Chemical Formula 2e:

wherein, in Chemical Formula 2e,

Y 1 to Y 5 are each independently CR a R b , NR c , O, S, Se, Te, C═O, C═S, C═O, C═Se, or C═Te, wherein R a , R b , and R c is hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 aralkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, or a substituted or unsubstituted C2 to C30 heteroaryl group or two adjacent ones of R a or R b and R c are linked to each other to provide a ring, provided that two adjacent ones of Y 1 to Y 5 are not NR c , O, S, Se, Te, C═O, C═S, C═O, C═Se, or C═Te,

R 61 and R 62 are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 aralkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, or a substituted or unsubstituted C2 to C30 heteroaryl group, and

n is an integer of 1 to 3.

13 . The quantum dot device of claim 5 , wherein the organic ammonium cation is a substituted or unsubstituted pyrrolidinium cation, a substituted or unsubstituted piperidinium cation, a substituted or unsubstituted pyridinium cation, pyridazinium cation, a substituted or unsubstituted pyrimidinium cation, a substituted or unsubstituted pyrazinium cation, a substituted or unsubstituted imidazolium cation, a substituted or unsubstituted pyrazolium cation, a substituted or unsubstituted thiazolium cation, a substituted or unsubstituted oxazolium cation, a substituted or unsubstituted triazolium cation, a substituted or unsubstituted piperazinium cation, a substituted or unsubstituted morpholinium cation, or a combination thereof.

14 . The quantum dot device of claim 5 , wherein the organic phosphonium cation comprises a cation represented by Chemical Formula 2f:

wherein, in Chemical Formula 2f,

R 71 , R 72 , R 73 , and R 74 are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 aralkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, or a substituted or unsubstituted C2 to C30 heteroaryl group, provided that at least one of R 71 , R 72 , R 73 , or R 74 is a substituted or unsubstituted C3 to C30 alkyl group, a substituted or unsubstituted C3 to C30 alkoxy group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 aralkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, or a substituted or unsubstituted C2 to C30 heteroaryl group.

15 . The quantum dot device of claim 5 , wherein the organic sulfonium cation comprises a cation represented by Chemical Formula 2g:

wherein, in Chemical Formula 2g,

R 81 , R 82 , and R 83 are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 aralkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group or a substituted or unsubstituted C2 to C30 heteroaryl group, provided that at least one of R 81 , R 82 , or R 83 is C3 to C30 alkoxy group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 aralkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, or a substituted or unsubstituted C2 to C30 heteroaryl group.

16 . The quantum dot device of claim 1 , wherein the hole transport layer has a thickness of about 10 nanometers to about 100 nanometers.

17 . The quantum dot device of claim 1 , wherein a ratio of a thickness of the first hole transport layer to a thickness of the second hole transport layer is in a range of about 1.0:1 to about 9.0:1.

18 . The quantum dot device of claim 1 , wherein the first hole transport layer is disposed closer to the first electrode than is the second hole transport layer and the second hole transport layer is disposed closer to the quantum dot layer than is the first hole transport layer.

19 . The quantum dot device of claim 1 , wherein a difference between an energy bandgap of the first hole transport layer and an energy bandgap of the second hole transport layer is in a range of about 0.1 electronvolts to about 2.0 electronvolts.

20 . The quantum dot device of claim 1 , wherein each valence band of the first hole transport layer and the second hole transport layer is present between a work function of the first electrode and a highest occupied molecular orbital energy level of the quantum dot layer.

21 . The quantum dot device of claim 1 , wherein a difference between a highest occupied molecular orbital energy level of the quantum dot layer and an energy level of a valence band of the second hole transport layer is 0 electronvolts to about 1.0 electronvolts.

22 . The quantum dot device of claim 1 , wherein a conduction band of the second hole transport layer has an energy level that is less than a lowest unoccupied molecular orbital energy level of the quantum dot layer.

23 . The quantum dot device of claim 1 , wherein a difference between an energy level of a conduction band of the second hole transport layer and a lowest unoccupied molecular orbital energy level of the quantum dot layer is greater than or equal to about 0.5 electronvolts.

24 . The quantum dot device of claim 1 , further comprising an electron injection layer comprising inorganic nanoparticles or an organic material.

25 . The quantum dot device of claim 24 , wherein the inorganic nanoparticles comprise metal oxide nanoparticles represented by Zn 1-x Q x O, wherein Q is a metal other than Zn, and 0≤x<0.5.

26 . The quantum dot device of claim 1 , wherein the quantum dot device further comprises a hole injection layer between the first electrode and the quantum dot layer.

27 . A method of manufacturing a quantum dot device, comprising

coating a first composition comprising a perovskite compound represented by Chemical Formula 1 on a first electrode and then annealing to form a first hole transport layer,

coating a second composition comprising a perovskite compound represented by Chemical Formula 2′ on the first hole transport layer, and then annealing to form a second hole transport layer,

forming a quantum dot layer on the second hole transport layer, and

forming a second electrode on the quantum dot layer to manufacture the quantum dot device,

AMX 3 Chemical Formula 1

wherein, in Chemical Formula 1,

M is a transition metal, a rare earth metal, or a combination thereof, and

X is a halide ion, a combination of two or more different halide ions, CNS − , PF 6 − , or BF 4 − ,

Chemical Formula 2′

A′X′ wherein,

in Chemical Formula 2′,

A′ is an organic ammonium cation

selected from the group consisting of a substituted or unsubstituted pyrrolidinium cation, a substituted or unsubstituted piperidinium cation, a substituted or unsubstituted pyridinium cation, pyridazinium cation, a substituted or unsubstituted pyrimidinium cation, a substituted or unsubstituted pyrazinium cation, a substituted or unsubstituted imidazolium cation, a substituted or unsubstituted pyrazolium cation, a substituted or unsubstituted thiazolium cation, a substituted or unsubstituted oxazolium cation, a substituted or unsubstituted triazolium cation, a substituted or unsubstituted piperazinium cation, a substituted or unsubstituted morpholinium cation, or a combination thereof, and

X′ is a halide ion.

28 . The method of claim 27 , wherein the first composition and second composition comprise a solvent of water, alcohol, or a combination thereof.

29 . The method of claim 27 , wherein the annealing is performed at a temperature of about 50° C. to about 300° C.

30 . An electronic device comprising the quantum dot device of claim 1 .

31 . A quantum dot device, comprising

a first electrode, a second electrode, a quantum dot layer disposed between the first electrode and the second electrode, and a hole transport layer disposed between the quantum dot layer and the first electrode,

wherein the hole transport layer comprises a first hole transport layer including a three-dimensional structure perovskite thin film, and a second hole transport layer including a two-dimensional structure perovskite thin film,

wherein the two-dimensional structure perovskite thin film comprises a perovskite compound represented by Chemical Formula 2:

AA′MX (4-n) X′ n Chemical Formula 2

wherein, in Chemical Formula 2,

A′ is an amine cation, and the amine is selected from the group consisting of a primary amine, secondary amine, or a tertiary aliphatic amine,

M is a transition metal, a rare earth metal, or a combination thereof,

X is a halide ion, a combination of two or more different halide ions, CNS − , PF 6 − , or BF 4 − ,

X′ is a halide ion, and

n is greater than 0 and less than 4,

wherein the amine cation is at least one of:

a cation represented by Chemical Formula 2a:

wherein, in Chemical Formula 2a,

a cation represented by Chemical Formula 2aa:

wherein, in Chemical Formula 2aa,

a cation represented by Chemical Formula 2b:

wherein, in Chemical Formula 2b,

32 . A quantum dot device, comprising

wherein the two-dimensional structure perovskite thin film comprises a perovskite compound represented by Chemical Formula 2:

AA′MX (4-n) X′ n Chemical Formula 2

wherein, in Chemical Formula 2,

A′ is an amine cation, and the amine is an aromatic amine or a non-aromatic heterocyclic amine,

M is a transition metal, a rare earth metal, or a combination thereof,

X is a halide ion, a combination of two or more different halide ions, CNS − , PF 6 − , or BF 4 − ,

X′ is a halide ion, and

n is greater than 0 and less than 4.

33 . The quantum device of claim 32 , wherein the aromatic amine is represented by Chemical Formula 2c of Chemical Formula 2d, and the non-aromatic heterocyclic amine is represented by Chemical Formula 2e:

wherein, in Chemical Formula 2c,

n is an integer of 1 to 3;

wherein, in Chemical Formula 2c,

Z 1 to Z 3 are each independently CR or N, wherein R x is hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 aralkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, or a substituted or unsubstituted C2 to C30 heteroaryl group, and

Y 1 is CR a R b or NR c , and when Z 1 to Z 3 are CR x , two adjacent ones of R a or R b , R c , and R x are linked to each other to provide a ring;

wherein, in Chemical Formula 2e,

n is an integer of 1 to 3.

Assignments (2)

ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 26, 2025

From: SAMSUNG ELECTRONICS CO., LTD.

To: SAMSUNG DISPLAY CO., LTD.

Reel/Frame 072391/0689 →

ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 15, 2022

From: JANG, EUN JOO; KIM, KWANGHEE; LEE, SEUNGJIN; SARGENT, TED

To: SAMSUNG ELECTRONICS CO., LTD.; THE GOVERNING COUNCIL OF THE UNIVERSITY OF TORONTO

Reel/Frame 059265/0662 →

Priority Claims (1)

KR 10-2021-0030908 · Mar 9, 2021 · national

Continuity (1)

Related Publication 20220290048A1 · Sep 15, 2022

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