Multichannel transistor with improved gate conformation
View Patent ↗A multichannel transistor is provided. In the transistor, a plurality of gate fingers overlie a substrate and extend laterally across the substrate from a gate manifold. The gate manifold has a curved edge, and each of the gate fingers projects radially from the curved manifold edge.
1. A transistor, comprising a substrate having an active area, a gate manifold formed on the substrate, and three or more gate fingers extending across the active area from the gate manifold, wherein the gate manifold has a curved edge, and each of the gate fingers projects radially from the curved manifold edge.
2. The transistor of claim 1 , wherein at least one of the three or more gate fingers has a meandering shape that comprises at least one arc.
3. The transistor of claim 1 , wherein each of the gate fingers has an effective length from a foot of the gate manifold to a finger end distal to the gate manifold, and all of the three or more gate fingers have substantially the same effective length.
4. The transistor of claim 3 , wherein each of the three or more gate fingers has a meandering shape that comprises at least one arc.
5. The transistor of claim 4 , wherein the meandering shape of at least two gate fingers comprises a plurality of arcs described about a curved central course.
6. The transistor of claim 4 , wherein the meandering shapes of the gate fingers comprise sinusoidal arcs.
7. The transistor of claim 4 , wherein the meandering shapes of the gate fingers comprise sinusoidal arcs, and the sinusoidal arcs of at least one gate finger are amplitude modulated.
8. The transistor of claim 4 , wherein the meandering shapes of the gate fingers comprise sinusoidal arcs, and the sinusoidal arcs of at least one gate finger are frequency modulated.
9. The transistor of claim 4 , wherein the meandering shapes of the gate fingers comprise sinusoidal arcs, and the sinusoidal arcs of at least one gate finger are modulated in both frequency and amplitude.