Write data for bin resynchronization after power loss

1. A system comprising:

a memory device; and

a processing device, operatively coupled to the memory device, the processing device to perform operations comprising:

measuring one of a temporal voltage shift or a read bit error rate of fixed data stored in the memory device in response to detecting a power on of the memory device, the fixed data having been programmed in response to detecting a power loss;

estimating an amount of time for which the memory device was powered off based on results of the measuring; and

in response to the amount of time satisfying a threshold criterion, updating a value for the temporal voltage shift of a block family based on the amount of time.

2. The system of claim 1 , wherein the operations further comprise:

detecting a voltage of a power source for the memory device has dropped below a threshold voltage indicative of an imminent power loss; and

writing the fixed data to the memory device in response to the detecting.

3. The system of claim 2 , wherein the fixed data is of a predetermined pattern, and the operations further comprise, in conjunction with the writing, storing a location of the fixed data.

4. The system of claim 1 , wherein the operations further comprise:

resynchronizing assignment of a threshold voltage offset bin to the block family based on the updated value for temporal voltage shift of the block family; and

transitioning to execution of host memory commands received from a host system.

5. The system of claim 1 , wherein the measuring comprises measuring a data state metric associated with one or more memory cell of the data, and the operations further comprise:

comparing a level of the data state metric to a temporal voltage shift function to estimate the amount of time; and

incrementing a value of a timer, restored from the memory device, based on the amount of time.

6. The system of claim 1 , wherein the operations further comprise:

determining that the amount of time does not satisfy the threshold criterion; and

transitioning directly to execution of host memory commands received from a host system.

7. The system of claim 1 , wherein the operations further comprise:

determining that the amount of time satisfies a second threshold criterion that is greater than the threshold criterion;

tuning an algorithm, which is used to measure temporal voltage shift of block families, in order to accurately measure aged programmed pages based on the amount of time; and

transitioning to execution of host memory commands received from a host system.

8. The system of claim 1 , further comprising:

a power source to power the memory device; and

one or more capacitors coupled to the power source to extend a period of time from detecting the power loss to a loss of power of the memory device.

9. A method comprising:

measuring, by a processing device of a memory sub-system, one of a temporal voltage shift or a read bit error rate of fixed data stored in a memory device in response to detecting a power on of the memory device, the fixed data having been programmed in response to detecting a power loss;

estimating, by the processing device, an amount of time for which the memory device was powered off based on results of the measuring; and

in response to the amount of time satisfying a threshold criterion, updating, by the processing device, a value for a temporal voltage shift of a block family based on the amount of time.

10. The method of claim 9 , wherein the fixed data is of a predetermined pattern, and the method further comprises:

detecting a voltage of a power source for the memory device has dropped below a threshold voltage indicative of an imminent power loss;

writing the fixed data to the memory device in response to the detecting; and

storing a location of the fixed data for later use.

11. The method of claim 9 , further comprising:

resynchronizing assignment of a threshold voltage offset bin to the block family based on the updated value for temporal voltage shift of the block family; and

transitioning to execution of host memory commands received from a host system.

12. The method of claim 9 , wherein the measuring comprises measuring a data state metric associated with one or more memory cell of the data, the method further comprising:

comparing a level of the data state metric to a temporal voltage shift function to estimate the amount of time; and

incrementing a value of a timer, restored from the memory device, based on the amount of time.

13. The method of claim 9 , further comprising:

determining that the amount of time does not satisfy the threshold criterion; and

transitioning directly to execution of host memory commands received from a host system.

14. The method of claim 9 , further comprising:

determining that the amount of time satisfies a second threshold criterion that is greater than the threshold criterion;

tuning an algorithm, which is used to measure the temporal voltage shift of block families, in order to accurately measure aged programmed pages; and

transitioning to execution of host memory commands received from a host system.

15. A method comprising:

in response to detecting a power on of a memory device of a memory sub-system:

reading a time value of a low power clock;

measuring a temporal voltage shift of fixed data having been programmed in the memory device in response to detecting a power loss; and

estimating, based on the time value and the temporal voltage shift, an amount of time the memory device was powered off; and

updating, in response to the amount of time satisfying a threshold criterion, a value for temporal voltage shift of a block family based on the amount of time.

16. The method of claim 15 , wherein updating the value for the temporal voltage shift of the block family further comprises updating bin pointers of a vector in a block family table indexed to the block family from a superblock table.

17. The method of claim 15 , further comprising:

resynchronizing assignment of a threshold voltage offset bin to the block family based on the updated value of the temporal voltage shift for the block family; and

transitioning to execution of host memory commands received from a host system.

18. The method of claim 15 , wherein the measuring comprises measuring a data state metric associated with one or more memory cell of the data, the method further comprising:

comparing a level of the data state metric to a temporal voltage shift function to estimate the amount of time; and

incrementing a value of a timer, restored from the memory device, based on the amount of time.

19. The method of claim 15 , further comprising:

determining that the amount of time does not satisfy the threshold criterion; and

transitioning directly to execution of host memory commands received from a host system.

20. The method of claim 15 , further comprising:

determining that the amount of time satisfies a second threshold criterion that is greater than the threshold criterion;

tuning an algorithm, which is used to measure temporal voltage shift of block families, in order to accurately measure aged programmed pages; and

transitioning to execution of host memory commands received from a host system.