Composition, film, method of forming film, method of forming pattern, method of forming organic-underlayer-film reverse pattern, and method of producing composition
A composition includes: a metal compound including a ligand; and a solvent. The ligand is derived from a compound represented by formula (1). L represents an oxygen atom or a single bond; R 1 represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms; R 2 and R 3 each independently represent a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms, or R 2 and R 3 bind with each other and represent an alicyclic structure having 3 to 20 ring atoms together with the carbon atom to which R 2 and R 3 bond, or R 1 and either R 2 or R 3 bind with each other and represent a lactone ring structure having 4 to 20 ring atoms or a cyclic ketone structure having 4 to 20 ring atoms together with the atom chain to which R 1 and either R 2 or R 3 bond.
1 . A composition comprising:
a metal compound comprising a ligand; and
a solvent,
wherein the ligand is derived from a compound represented by formula (1):
wherein, in the formula (1), L represents a single bond; R 1 represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms; R 2 and R 3 each independently represent a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms, or R 2 and R 3 bind with each other and represent an alicyclic structure having 3 to 20 ring atoms together with the carbon atom to which R 2 and R 3 bond, or R 1 and either R 2 or R 3 bind with each other and represent a lactone ring structure having 4 to 20 ring atoms or a cyclic ketone structure having 4 to 20 ring atoms together with the atom chain to which R 1 and either R 2 or R 3 bond.
2 . The composition according to claim 1 , wherein a metal atom in the metal compound belongs to period 3 to period 7 of group 2 to group 14 in periodic table.
3 . The composition according to claim 2 , wherein the metal atom belongs to group 4, group 9, or group 10 in the periodic table.
4 . The composition according to claim 1 , wherein R 1 represents a substituted or unsubstituted monovalent chain hydrocarbon group having 1 to 10 carbon atoms.
5 . The composition according to claim 1 , wherein R 2 and R 3 each represent a hydrogen atom.
6 . A film formed from the composition according to claim 1 .
7 . A method of forming a film, the method comprising applying the composition according to claim 1 directly or indirectly on a substrate.
8 . A method of forming a pattern, the method comprising:
applying the composition according to claim 1 directly or indirectly on a substrate to form a resist underlayer film;
applying an organic-resist-film-forming composition directly or indirectly on the resist underlayer film to form an organic resist film;
exposing the organic resist film to a radioactive ray; and
developing the organic resist film exposed.
9 . A method of forming an organic-underlayer-film reverse pattern, the method comprising:
forming an organic underlayer film directly or indirectly on a substrate;
forming a resist pattern directly or indirectly on the organic underlayer film;
forming an organic-underlayer-film pattern by etching the organic underlayer using the resist pattern as a mask;
forming an organic-underlayer-film-reverse-pattern-forming film on the organic-underlayer-film pattern by applying the composition according to claim 1 ; and
removing the organic-underlayer-film pattern to form an organic-underlayer-film reverse pattern.
10 . A method of producing the composition according to claim 1 , the method comprising:
mixing a metal alkoxide and a compound represented by formula (1) to obtain a mixture;
adding water to the mixture to cause a hydrolytic condensation reaction of the metal alkoxide; and
adding a solvent to the mixture to which the water is added:
wherein, in the formula (1), L represents a single bond; R 1 represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms; R 2 and R 3 each independently represent a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms, or R 2 and R 3 bind with each other and represent an alicyclic structure having 3 to 20 ring atoms together with the carbon atom to which R 2 and R 3 bond, or R 1 and either R 2 or R 3 bind with each other and represent a lactone ring structure having 4 to 20 ring atoms or a cyclic ketone structure having 4 to 20 ring atoms together with the atom chain to which R 1 and either R 2 or R 3 bond.
11 . A composition comprising:
a metal compound comprising a ligand; and
a solvent,
wherein the ligand is derived from a compound represented by formula (1):
wherein, in the formula (1), L represents an oxygen atom or a single bond; R 1 represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms; R 2 and R 3 each represent a hydrogen atom.
12 . The composition according to claim 11 , wherein a metal atom in the metal compound belongs to period 3 to period 7 of group 2 to group 14 in periodic table.
13 . The composition according to claim 12 , wherein the metal atom belongs to group 4, group 9, or group 10 in the periodic table.
14 . The composition according to claim 11 , wherein R 1 represents a substituted or unsubstituted monovalent chain hydrocarbon group having 1 to 10 carbon atoms.
15 . A film formed from the composition according to claim 11 .
16 . A method of forming a film, the method comprising applying the composition according to claim 11 directly or indirectly on a substrate.
17 . A method of forming a pattern, the method comprising:
applying the composition according to claim 11 directly or indirectly on a substrate to form a resist underlayer film;
applying an organic-resist-film-forming composition directly or indirectly on the resist underlayer film to form an organic resist film;
exposing the organic resist film to a radioactive ray; and
developing the organic resist film exposed.
18 . A method of forming an organic-underlayer-film reverse pattern, the method comprising:
forming an organic underlayer film directly or indirectly on a substrate;
forming a resist pattern directly or indirectly on the organic underlayer film;
forming an organic-underlayer-film pattern by etching the organic underlayer using the resist pattern as a mask;
forming an organic-underlayer-film-reverse-pattern-forming film on the organic-underlayer-film pattern by applying the composition according to claim 11 ; and
removing the organic-underlayer-film pattern to form an organic-underlayer-film reverse pattern.
19 . A method of producing the composition according to claim 11 , the method comprising:
mixing a metal alkoxide and a compound represented by formula (1) to obtain a mixture;
adding water to the mixture to cause a hydrolytic condensation reaction of the metal alkoxide; and
adding a solvent to the mixture to which the water is added:
wherein, in the formula (1), L represents an oxygen atom or a single bond; R 1 represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms; R 2 and R 3 each independently represent a hydrogen atom.