Chip separation supported by back side trench and adhesive therein
A method of separating an electronic chip from a wafer is disclosed. In one aspect, the method comprises forming at least one trench in a back side of the wafer around at least part of the electronic chip to be separated, forming a back side metallization covering at least part of the back side and at least part of the at least one trench and attaching an adhesive layer of a tape to at least part of the back side metallization. The electronic chip is separated by removing material from a front side of the wafer along a separation path which includes part of the at least one trench in such a way that, during separating, the adhesive layer fills at least part of the at least one trench above a level of the back side metallization on the back side.
1. A method of separating an electronic chip from a wafer, wherein the method comprises:
forming two spaced trenches in a back side of the wafer around at least part of the electronic chip to be separated;
forming a back side metallization covering at least part of the back side and at least part of the at least one trench;
attaching an adhesive layer of a tape to at least part of the back side metallization; and
separating the electronic chip by removing material from a front side of the wafer along a separation path which includes part of each of the two spaced trenches in such a way that, during separating, the adhesive layer fills at least part of the two spaced trenches above a level of the back side metallization on the back side to support the back side metallization along the separation path during the separating of the electronic chip.
2. The method according to claim 1 , wherein the method comprises forming the two spaced trenches parallel to each other and/or around a common center.
3. The method according to claim 1 , wherein the method comprises separating the electronic chip along the separation path which includes a region extending between the two spaced trenches.
4. The method according to claim 1 , wherein the method comprises forming the two spaced trenches circumferentially closed around the entire electronic chip to be separated.
5. The method according to claim 1 , wherein the method comprises forming the two spaced trenches with a depth being smaller than or equal to a thickness of the adhesive layer.
6. The method according to claim 1 , wherein the method comprises forming the two spaced trenches with a depth in a range from 3 μm to 10 μm.
7. The method according to claim 1 , wherein the method comprises forming each of the two spaced trenches with a width smaller than a width of the separation path.
8. The method according to claim 1 , wherein the method comprises separating the electronic chip by one of the group consisting of cutting with a mechanical blade, and laser processing.
9. The method according to claim 8 , wherein the method comprises separating the electronic chip by guiding the mechanical blade through the entire wafer, through the entire adhesive layer, and into a foil of the tape below the adhesive layer.
10. The method according to claim 1 , wherein the method comprises separating the electronic chip in such a way that the adhesive layer fills the entire two spaced trenches during separating.
11. The method according to claim 1 , wherein the method comprises forming the two spaced trenches by covering the back side of the wafer with a patterned mask, and by etching the wafer through the patterned mask.
12. The method according to claim 1 , wherein the method comprises picking the separated electronic chip from the tape after the separating.
13. The method according to claim 12 , wherein picking the separated electronic chip comprises lifting the electronic chip from the tape by at least one pin applying a lifting force to the back side of the electronic chip.
14. The method according to claim 12 , wherein picking the separated electronic chip comprises sucking the lifted electronic chip at the front side of the electronic chip.
15. The method according to claim 1 , wherein the electronic chip has a thickness of less than 60 μm.
16. The method according to claim 1 , wherein the electronic chip is configured for experiencing a vertical current flow between the front side and the back side during operation.
17. A method of separating an electronic chip from a wafer, wherein the method comprises:
forming two spaced trenches in a back side of the wafer around at least part of the electronic chip to be separated;
forming a back side metallization covering at least part of the back side and at least part of the at least one trench;
attaching an adhesive layer of a tape to at least part of the back side metallization;
separating the electronic chip by removing material from a front side of the wafer along a separation path which includes part of each of the two spaced trenches in such a way that, during separating, the adhesive layer fills at least part of the two spaced trenches above a level of the back side metallization on the back side to support the back side; and
wherein the method comprises forming the two spaced trenches by covering the back side of the wafer with a patterned mask, by doping the wafer through the patterned mask, and by etching the wafer after removing the patterned mask.