Metal substrate structure for a semiconductor power module
A method can be used for manufacturing a metal substrate structure for a semiconductor power module. A plurality of terminals are welded to a metal top layer. After the welding, a dielectric layer is coupled between the metal top layer and a metal bottom layer. The dielectric can be laminated or molded, as examples.
1. A method for manufacturing a metal substrate structure for a semiconductor power module, the method comprising:
welding a plurality of terminals to a metal top layer; and
after the welding, coupling a dielectric layer between the metal top layer and a metal bottom layer.
2. The method according to claim 1 , wherein coupling the dielectric layer between the metal top layer and the metal bottom layer comprises:
aligning the metal top layer, the dielectric layer and the metal bottom layer relative to each other; and
laminating the metal top layer, the dielectric layer and the metal bottom layer.
3. The method according to claim 1 , further comprising masking and etching a recess in the metal top layer.
4. The method according to claim 1 , further comprising stamping and/or cutting a recess in the metal top layer.
5. The method according to claim 4 , wherein the terminals are welded to the metal top layer before stamping and/or cutting the metal top layer.
6. The method according to claim 4 , wherein the terminals are welded to the metal top layer after stamping and/or cutting the metal top layer.
7. The method according to claim 1 , wherein welding the terminals to the metal top layer comprises welding by ultrasonic welding.
8. The method according to claim 1 , wherein welding the terminals to the metal top layer comprises welding by laser welding.
9. The method according to claim 1 , further comprising cleaning and/or levelling the terminals, the metal top layer, the dielectric layer and/or the metal bottom layer.
10. A method of making a semiconductor power module, the method comprising electrically coupling electronics with the metal top layer of the metal substrate structure of claim 1 .
11. The method of claim 10 , wherein the semiconductor power module comprises:
the metal bottom layer;
the metal top layer, a plurality of pads being formed within the metal top layer;
the plurality of terminals; and
the dielectric layer disposed between the metal top layer and the metal bottom layer, the dielectric layer including a ditch located in a region between a first pad and a second pad and also including a rib located in a region between the second pad and a third pad, the ditch extending below a top surface of the metal top layer and the rib protruding above the top surface of the metal top layer; and
the electronics electrically coupled with the metal top layer.
12. The semiconductor power module according to claim 11 , wherein each terminal has an L-shape including a first portion parallel to the respective pad and a second portion extending away from the respective pad, the second portion being longer than the first portion.
13. A method for manufacturing a metal substrate structure for a semiconductor power module, the method comprising:
welding a plurality of terminals to a metal top layer; and
after the welding, coupling a dielectric layer between the metal top layer and a metal bottom layer, wherein coupling the dielectric layer between the metal top layer and the metal bottom layer comprises:
providing a molding substance;
aligning the metal top layer and the metal bottom layer relative to each other with a predetermined distance in between; and
bringing the molding substance between the aligned metal top layer and the metal bottom layer and thereby forming the dielectric layer by molding.
14. A method for manufacturing a metal substrate structure for a semiconductor power module, the method comprising:
welding a plurality of terminals to a metal top layer;
forming a plurality of pad regions within the metal top layer;
after the welding, aligning the metal top layer with a metal bottom layer; and
molding a dielectric material between the aligned metal top layer and metal bottom layer.
15. The method according to claim 14 , wherein the pad regions are formed before welding the terminals to the metal top layer.
16. The method according to claim 14 , wherein the pad regions are formed after welding the terminals to the metal top layer.
17. The method according to claim 14 , wherein welding the terminals to the metal top layer comprises welding by ultrasonic welding or laser welding.
18. The method according to claim 14 , further comprising cleaning and/or levelling the terminals, the metal top layer, the dielectric material and/or the metal bottom layer.
19. A method for manufacturing a metal substrate structure for a semiconductor power module, the method comprising:
welding a plurality of terminals to a metal top layer; and
after the welding, aligning the metal top layer with a dielectric layer and a metal bottom layer;
laminating the metal top layer, the dielectric layer and the metal bottom layer; and
etching portions of the metal top layer to form electrically isolated pads, each terminal being welded to a respective one of the pads.
20. The method according to claim 19 , wherein welding the terminals to the metal top layer comprises welding by ultrasonic welding or laser welding.
21. The method according to claim 19 , further comprising cleaning and/or levelling the terminals, the metal top layer, the dielectric layer and/or the metal bottom layer.