IP Library › Granted Patent US 12,032,828
Granted Patent B2
US 12,032,828 · App. 17/713,228 · Granted Jul 9, 2024

Coordinated in-module RAS features for synchronous DDR compatible memory

Inventors: Mu-Tien Chang (Santa Clara, CA); Dimin Niu (Sunnyvale, CA); Hongzhong Zheng (Los Gatos, CA); Sun Young Lim (Gyeonggi-do, KR); Indong Kim (Kyunggi-Do, KR); Jangseok Choi (San Jose, CA)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
G06F3/061G06F3/0619G06F3/0625G06F3/0652G06F3/0653G06F3/0673G06F11/106G11C29/52G11C5/04G11C11/40611G11C2029/0409G11C2029/0411
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Quick Facts
Patent No.
US 12,032,828
App. No.
17/713,228
Granted
Jul 9, 2024
Kind
B2
Abstract

A memory module includes a memory array, an interface and a controller. The memory array includes an array of memory cells and is configured as a dual in-line memory module (DIMM). The DIMM includes a plurality of connections that have been repurposed from a standard DIMM pin out configuration to interface operational status of the memory device to a host device. The interface is coupled to the memory array and the plurality of connections of the DIMM to interface the memory array to the host device. The controller is coupled to the memory array and the interface and controls at least one of a refresh operation of the memory array, control an error-correction operation of the memory array, control a memory scrubbing operation of the memory array, and control a wear-level control operation of the array, and the controller to interface with the host device.

Claims (42)

1. A method comprising:

receiving, by a controller, a command using an interface, the interface comprising a connection based on an in-line memory module terminal configuration to provide feedback status information of a memory array; and

controlling, by the controller, the interface to provide feedback status information using the interface based on a result of an error-correction operation of the memory array.

2. The method of claim 1 , further comprising:

controlling, by the controller, a refresh operation of the memory array, and

controlling, by the controller, the interface to provide feedback status information based on the refresh operation.

3. The method of claim 1 , further comprising:

controlling, by the controller, a refresh operation of the memory array, and

controlling, by the controller, the interface to provide feedback status information based on a status of the refresh operation.

4. The method of claim 3 , wherein the feedback status information indicates a status of a rank identification for a refresh operation.

5. The method of claim 3 , wherein the feedback status information indicates a status of a bank identification for a refresh operation.

6. The method of claim 1 , further comprising:

controlling, by the controller, a scrubbing operation of the memory array, and

controlling, by the controller, the interface to provide feedback status information based on the scrubbing operation.

7. The method of claim 1 , wherein the memory array comprises non-volatile memory,

the method further comprising:

controlling, by the controller, a wear-leveling operation of the memory array, and

controlling, by the controller, the interface to provide feedback status information device based on the wear-leveling operation.

8. A method, comprising:

controlling, by a controller, a wear-leveling operation of a memory array, the memory array comprising an array of memory cells, the array of memory cells comprising volatile memory and non-volatile memory, the memory array configured as a memory module; and

providing, by the controller, using an interface comprising a connection based on an in-line memory module terminal configuration, feedback status information based on the wear-leveling operation.

9. The method of claim 8 , further comprising providing, by the controller, using the interface, scheduling information based on the wear-leveling operation.

10. The method of claim 8 , further comprising:

controlling, by the controller, a refresh operation of the memory array, and

providing, by the controller, using the interface, feedback status information based on the refresh operation.

11. The method of claim 8 , further comprising:

controlling, by the controller, an error-correction operation of the memory array, and

providing, by the controller, feedback status information based on the error-correction operation and that indicates a result of the error-correction operation.

12. The method of claim 11 , further comprising:

controlling, by the controller, a scrubbing operation of the memory array, and

providing, by the controller, using the interface, feedback status information based on the scrubbing operation.

13. The method of claim 8 , wherein the connection is repurposed from the in-line memory module terminal configuration.

14. A method, comprising:

controlling, by a controller, using an interface, an operation of a memory array, wherein the memory array is configured as a memory module, and the memory module comprises a connection based on an in-line memory module terminal configuration;

receiving, by the controller, using the interface, a command, wherein the controller is configured to provide, using the connection, an operational status of the memory array; and

providing, by the controller, using the interface, feedback status information based on the command relating to an operation controlled by the controller.

15. The method of claim 14 , wherein the operation comprises at least one of a refresh operation of a memory array, an error-correction operation of the memory array, a memory scrubbing operation of the memory array, or a wear-leveling operation of the memory array.

16. The method of claim 14 , wherein the controller controls a refresh operation of the memory array, and the method further comprises controlling, by the controller, the interface based on the refresh operation of the memory array to provide the feedback status information based on the refresh operation.

17. The method of claim 14 , wherein the controller controls an error-correction operation of the memory array, and the method further comprises controlling, by the controller, the interface to provide the feedback status information indicating a result of the error-correction operation.

18. The method of claim 17 , further comprising controlling, by the controller, the interface to provide feedback status information that indicates an action based on the result of the error-correction operation.

19. The method of claim 14 , wherein the controller controls a memory scrubbing operation of the memory array, and the method further comprises controlling, by the controller, the interface to provide the feedback status based on the memory scrubbing operation.

20. The method of claim 14 , wherein the memory array comprises a plurality of non-volatile memory cells, the controller controls a wear-leveling operation of the memory array, and the method further comprises controlling, by the controller, the interface to provide the feedback status information based on the wear-leveling operation.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 7, 2023
From: CHANG, MU-TIEN; NIU, DIMIN; ZHENG, HONGZHONG; LIM, SUN YOUNG; KIM, INDONG; CHOI, JANGSEOK
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 063884/0805 →
Continuity (8)
Continuation 16819032 · Mar 13, 2020
Continuation 15213386 · Jul 18, 2016
Provisional Application 62347569 · Jun 8, 2016
Provisional Application 62303352 · Mar 3, 2016
Provisional Application 62303349 · Mar 3, 2016
Provisional Application 62303347 · Mar 3, 2016
Provisional Application 62303343 · Mar 3, 2016
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