Raman spectroscopy based measurement system

1. A method for use in measuring one or more characteristics of a patterned structure, the method comprising:

performing measurements on a patterned structure by illuminating the patterned structure with exciting light to cause Raman scattering of one or more excited regions of the patterned structure, while applying a controlled change of a temperature condition of the patterned structure and while monitoring the temperature condition of the patterned structure;

collecting the Raman scattering, by a detection unit, and generating measured data; and

generating, utilizing the measured data, data indicative of spatial profile of one or more properties of the patterned structure;

wherein the measured data is a temperature dependent Raman response of the patterned structure, and

wherein said monitoring of the temperature comprises analyzing the temperature dependent Raman response of the patterned structure and determining the controlled change of the temperature condition from a variation of at least one of (a) Raman scattering peak intensity, (b) Raman scattering peak wavelength, or (c) Raman scattering peak width.

2. The method according to claim 1 , wherein said one or more properties of the patterned structure include at least one of material and geometric properties of the patterned structure.

3. The method according to claim 2 , wherein said applying the controlled change of the temperature condition comprises controllably heating the patterned structure under illumination to affect corresponding change in optical absorption of materials of the patterned structure within at least said one or more excited regions, thereby changing penetration of exciting illumination into the patterned structure, the measured data being therefore indicative of a spatial profile of sources of the Raman scattering within said one or more excited regions in the structure.

4. The method according to claim 3 , wherein the regions of the patterned structure at different penetration depths are different from one another in at least one of the following: layer stacks and patterns.

5. The method according to claim 1 , wherein said controlled change of the temperature condition is performed by heating of the patterned structure.

6. The method according to claim 1 , comprising performing a plurality of the measurement sessions while varying one or more of the following measurement conditions: wavelengths of the illumination; angles of incidence of the illumination; and polarization states of the illumination.

7. The method according to claim 1 , wherein said illumination of the patterned structure to cause Raman scattering of one or more excited regions of the pattern structure comprises optical beams of two or more selected wavelengths.

8. The method according to claim 1 , wherein said spatial profile of the one or more properties of the patterned structure is a two-dimensional profile of said at least one property distribution across and through the structure.

9. The method according to claim 1 , comprising determining the change of the temperature condition from the variation of the Raman scattering peak intensity.

10. The method according to claim 1 , comprising determining the change of the temperature condition from the variation of the Raman scattering peak wavelength.

11. The method according to claim 1 , comprising determining the change of the temperature condition from the variation of the Raman scattering peak width.

12. A system for measuring one or more characteristics of a patterned structure, the system comprising:

a control system; and

a measurement system that comprises an illumination unit and a detection unit;

wherein the illumination unit is configured and operable to illuminate the patterned structure to cause Raman scattering of one or more excited regions of the patterned structure and to cause a controllable change of a temperature condition of the patterned structure;

wherein the detection unit comprises at least one optical detector configured and operable to collect the Raman scattering of the structure while under the controllable change of the temperature condition, and generate corresponding measured data; and

wherein the control system is configured to be in data communication with the measurement system, to monitor the temperature condition of the patterned structure, to receive the measured data, and to utilize the measured data to generate data indicative of a spatial profile of at least one property of the patterned structure;

wherein the measured data is a temperature dependent Raman response of the patterned structure, and wherein the control system is configured and operable to monitor the temperature condition by analyzing the temperature dependent Raman response of the patterned structure and determine the controlled change of the temperature condition from a variation of at least one of (a) Raman scattering peak intensity, (b) Raman scattering peak wavelength, or (c) Raman scattering peak width.

13. The system according to claim 12 , wherein the control system is configured and operable to determine the change of the temperature condition from a variation of a Raman scattering peak intensity.

14. The system according to claim 12 , wherein the control system is configured and operable to determine the change of the temperature condition from the variation of the Raman scattering peak wavelength.

15. The system according to claim 12 , wherein the control system is configured and operable to determine the change of the temperature condition from a variation of a Raman scattering peak width.