IP Library Granted Patent US 12,199,088
Granted Patent B2
US 12,199,088 · App. 17/718,534 · Granted Jan 14, 2025

Package structures

Inventors: Jen-Chih Li (Taoyuan, TW); Liang-Cheng Wang (Taoyuan, TW); Wei-Hsiang Chao (Taoyuan, TW)
Assignee: ANCORA SEMICONDUCTORS INC.
H01L27/0255H01L23/49562H01L24/48H01L29/2003H01L2224/48137H01L2224/48245
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Quick Facts
Patent No.
US 12,199,088
App. No.
17/718,534
Granted
Jan 14, 2025
Kind
B2
Abstract

A package structure is provided. The package structure includes a leadframe, a GaN power device, and an electrostatic discharge protection component. The leadframe includes a gate pad, a source pad, and a drain pad, which are disposed on the leadframe. The GaN power device has a gate end. The GaN power device is disposed on the source pad of the leadframe. The electrostatic discharge protection component includes a first pad. The first pad is disposed on the electrostatic discharge protection component. The electrostatic discharge protection component is disposed on the source pad of the leadframe. The gate end of the GaN power device is electrically connected to the first pad of the electrostatic discharge protection component. The first pad of the electrostatic discharge protection component is electrically connected to the gate pad of the leadframe.

Claims (9)

1. A package structure, comprising:

a leadframe comprising a gate pad, a source pad, a drain pad and a kelvin source pad, which are disposed on the leadframe:

a GaN power device having a gate end, a first source end, a second source end and a drain end, wherein the GaN power device is disposed on the source pad of the leadframe;

an electrostatic discharge protection component comprising a first pad, wherein the electrostatic discharge protection component is disposed on the source pad of the leadframe, the gate end of the GaN power device is electrically connected to the first pad of the electrostatic discharge protection component by a first conductive wire, and the first pad of the electrostatic discharge protection component is electrically connected to the gate pad of the leadframe by a second conductive wire, the first source end of the GaN power device is electrically connected to the kelvin source pad of the leadframe by a third conductive wire, the second source end of the GaN power device is electrically connected to the source pad of the leadframe by a fourth conductive wire and the drain end of the GaN power device is electrically connected to the drain pad of the leadframe by a fifth conductive wire.

2. The package structure as claimed in claim 1 , wherein the electrostatic discharge protection component further comprises a second pad, and the first pad and the second pad are disposed on the same surface of the electrostatic discharge protection component.

3. The package structure as claimed in claim 2 , wherein the second pad of the electrostatic discharge protection component is electrically connected to the source pad of the leadframe by a sixth conductive wire.

4. The package structure as claimed in claim 1 , wherein the electrostatic discharge protection component has a capacitance value that is greater than or equal to 30 nC.

5. The package structure as claimed in claim 4 , wherein the electrostatic discharge protection component has an operating voltage that is greater than or equal to 6V.

6. The package structure as claimed in claim 1 , wherein the electrostatic discharge protection component comprises a Zener diode, or a transient voltage suppressor (TVS) diode.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 8, 2022
From: DELTA ELECTRONICS, INC.
To: ANCORA SEMICONDUCTORS INC.
Reel/Frame 061695/0106 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 27, 2022
From: LI, JEN-CHIH; WANG, LIANG-CHENG; CHAO, WEI-HSIANG
To: DELTA ELECTRONICS, INC.
Reel/Frame 060206/0017 →
Continuity (1)
Related Publication 20230326918A1 · Oct 12, 2023
References Cited (6)
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US 11444078B2 · Ueki · 2022 [cited by examiner]
US 20170236790A1 · Chinnusamy · 2017 [cited by examiner]
TW 202211391A · 2022 [cited by applicant]
Taiwanese Office Action and Search Report corresponding to TW application No. 111120578 dated Apr. 26, 2023; pp. 1-4. [cited by applicant]