Image sensor

1. An image sensor, comprising:

a first substrate having a first surface and a second surface, which are opposite to each other, the first substrate comprising unit pixel regions, each of which includes a device isolation pattern and a photoelectric conversion region that are provided adjacent to the first surface of the first substrate;

a pixel isolation pattern provided in the first substrate to define the unit pixel regions, the pixel isolation pattern penetrating the device isolation pattern;

a first impurity region and a floating diffusion region, which are provided in the first substrate and adjacent to the first surface, each of the first impurity region and the floating diffusion region being adjacent to a portion of the device isolation pattern;

a second substrate provided on the first substrate, the second substrate having a third surface and a fourth surface, which are opposite to each other;

a second impurity region provided in the second substrate and adjacent to the third surface;

a ground contact coupled to the first impurity region; and

a body contact coupled to the second impurity region,

wherein the ground contact and the body contact are electrically separated from each other.

2. The image sensor of claim 1 , wherein the third surface of the second substrate faces the first surface of the first substrate.

3. The image sensor of claim 2 , further comprising:

a first gate electrode provided on the first surface of the first substrate to penetrate a portion of the first substrate; and

a second gate electrode provided on the third surface of the second substrate,

wherein the second gate electrode is electrically connected to the floating diffusion region.

4. The image sensor of claim 3 , further comprising:

a third gate electrode spaced apart from the second gate electrode in a first direction; and

a fourth gate electrode spaced apart from the second gate electrode in a second direction crossing the first direction, when viewed in a plan view,

wherein the third and fourth gate electrodes are provided on the third surface of the second substrate.

5. The image sensor of claim 3 , further comprising:

a first insulating layer covering the first surface of the first substrate;

a first conductive pad on the first insulating layer;

a second insulating layer covering the third surface of the second substrate; and

a second conductive pad disposed below the second insulating layer to be in contact with the first conductive pad,

wherein the first conductive pad is electrically connected to the floating diffusion region, and

wherein the second conductive pad is electrically connected to the second gate electrode.

6. The image sensor of claim 1 , wherein the body contact is used to apply a negative voltage to the second substrate.

7. The image sensor of claim 1 , further comprising:

a buried insulating layer interposed between the first substrate and the second substrate,

wherein the fourth surface of the second substrate faces the first surface of the first substrate.

8. The image sensor of claim 7 , wherein the ground contact is provided to penetrate the buried insulating layer.

9. The image sensor of claim 1 ,

wherein the unit pixel regions comprise a first pixel region and a second pixel region, which are adjacent to each other,

wherein the second impurity region comprises a plurality of second impurity regions, and

wherein the second impurity regions are provided on the first pixel region and the second pixel region, respectively, and are electrically connected to each other.

10. The image sensor of claim 1 , wherein the pixel isolation pattern comprises:

a first isolation pattern spaced apart from the first substrate; and

a second isolation pattern interposed between the first isolation pattern and the first substrate.

11. An image sensor, comprising:

a first substrate having a first surface and a second surface, which are opposite to each other, and comprising a plurality of unit pixel regions, each of the plurality of unit pixel regions including a device isolation pattern and a floating diffusion region, which are provided adjacent to the first surface, and a photoelectric conversion region, which is provided below the floating diffusion region;

a second substrate on the first substrate, the second substrate comprising a third surface and a fourth surface, which are opposite to each other;

an insulating layer provided between the first substrate and the second substrate;

a pixel isolation pattern provided to penetrate the first substrate and the device isolation pattern and to define the plurality of unit pixel regions;

a first impurity region provided in the first substrate and adjacent to a portion of the device isolation pattern;

a second impurity region adjacent to the third surface of the second substrate;

a ground contact coupled to the first impurity region; and

a body contact coupled to the second impurity region,

wherein a voltage applied to the first substrate through the ground contact is different from a voltage applied to the second substrate through the body contact.

12. The image sensor of claim 11 , further comprising:

a first gate electrode provided on the first surface of the first substrate to penetrate a portion of the first substrate; and

a second gate electrode provided on the third surface of the second substrate,

wherein the third surface of the second substrate faces the first surface of the first substrate.

13. The image sensor of claim 12 ,

wherein the insulating layer comprises a first insulating layer covering the first surface of the first substrate and a second insulating layer covering the third surface of the second substrate, and

wherein the image sensor further comprises:

a first conductive pad on the first insulating layer; and

a second conductive pad provided below the second insulating layer to be in contact with the first conductive pad,

wherein the first conductive pad is electrically connected to the floating diffusion region, and

wherein the second conductive pad is electrically connected to the second gate electrode.

14. The image sensor of claim 11 ,

wherein the ground contact is provided to penetrate the insulating layer, and

wherein the fourth surface of the second substrate faces the first surface of the first substrate.

15. The image sensor of claim 11 , wherein the body contact is used to apply a negative voltage to the second substrate.

16. An image sensor, comprising:

a first substrate having a first surface and a second surface, which are opposite to each other, and comprising an optical black region, a pad region, and a pixel array region including a plurality of unit pixel regions;

a pixel isolation pattern provided in the first substrate to define the plurality of unit pixel regions, the pixel isolation pattern comprising a first isolation pattern and a second isolation pattern interposed between the first isolation pattern and the first substrate;

a photoelectric conversion region provided in each of the plurality of unit pixel regions;

a device isolation pattern, a first impurity region, and a floating diffusion region, which are provided in each of the plurality of unit pixel regions and are adjacent to the first surface, each of the first impurity region and the floating diffusion region being adjacent to a portion of the device isolation pattern;

a first gate electrode on the first surface of the first substrate;

a gate dielectric pattern interposed between the first gate electrode and the first substrate;

a gate spacer provided on a side surface of the first gate electrode;

a second substrate provided on the first substrate, the second substrate having a third surface and a fourth surface, which are opposite to each other;

a second impurity region provided adjacent to the third surface of the second substrate;

an interlayer insulating layer provided between the first substrate and the second substrate;

a ground contact provided in the interlayer insulating layer and coupled to the first impurity region;

a body contact provided in the interlayer insulating layer and coupled to the second impurity region;

an anti-reflection layer provided on the second surface of the first substrate;

a rear insulating layer on a bottom surface of the anti-reflection layer;

a color filter on a bottom surface of the rear insulating layer; and

a micro lens on a bottom surface of the color filter,

wherein the ground contact and the body contact are electrically separated from each other.

17. The image sensor of claim 16 , wherein a voltage applied to the first substrate through the ground contact is different from a voltage applied to the second substrate through the body contact.

18. The image sensor of claim 16 , further comprising:

a second gate electrode provided on the third surface of the second substrate,

wherein the second gate electrode is electrically connected to the floating diffusion region, and

wherein the third surface faces the first surface.

19. The image sensor of claim 18 ,

wherein the interlayer insulating layer comprises a first interlayer insulating layer covering the first surface of the first substrate and a second interlayer insulating layer covering the third surface of the second substrate, and

wherein the image sensor further comprises:

a first conductive pad on the first interlayer insulating layer; and

a second conductive pad disposed below the second interlayer insulating layer to be in contact with the first conductive pad,

the first conductive pad is electrically connected to the floating diffusion region, and

the second conductive pad is electrically connected to the second gate electrode.

20. The image sensor of claim 18 , further comprising:

a third gate electrode spaced apart from the second gate electrode in a first direction; and

a fourth gate electrode spaced apart from the second gate electrode in a second direction crossing the first direction, when viewed in a plan view,

wherein the third and fourth gate electrodes are provided on the third surface of the second substrate.