Defect inspection system and semiconductor fabrication apparatus including a defect inspection apparatus using the same

1. A defect inspection system comprising:

an information-obtainer arranged over a transferring member to successively photograph a surface of at least one substrate moving between at least two apparatuses; and

a defect inspector generating an image signal based on information of the substrate provided from the information-obtainer and comparing the image signal with a reference to detect a defect of the substrate,

wherein the information-obtainer comprises:

a light source configured to provide the substrate with an incident light; and

an optical detector collecting a reflected light from the substrate to generate an electrical signal with respect to the reflected light, wherein the optical detector is configured to move along a transferring direction of the substrate, and

wherein the light source comprises a first sub-light source configured to irradiate a first light to a first substrate, which transfers first, and a second sub-light source configured to irradiate a second light to a second substrate, which transfers later.

2. The defect inspection system of claim 1 , wherein the information-obtainer further comprises an optical path changer arranged between the substrate and the optical detector to change an optical path of the reflected light, thereby concentrating the reflected light on the optical detector.

3. The defect inspection system of claim 2 , wherein the optical path changer comprises a prism.

4. The defect inspection system of claim 3 , wherein the prism comprises an incidence surface and an exit surface, and a position of the exit surface is changed to control an inclined angle between the incident light and the reflected light.

5. The defect inspection system of claim 1 , wherein the light source is configured to control an incident angle of the incident light based on a position of the defect on the substrate.

6. The defect inspection system of claim 1 , wherein at least one of wavelengths, incident angles and lighting times of the first and second sub-light sources are different from each other.

7. The defect inspection system of claim 1 , wherein the optical detector comprises at least one of a CMOS image sensor (CIS), a line scan camera and an area scan camera.

8. The defect inspection system of claim 7 , wherein the line scan camera comprises a time delay integration (TDI) camera configured to photograph several times at least one portion of the substrate by a scanning and to overlap photographed images with each other to generate an image signal.

9. The defect inspection system of claim 1 , wherein the defect inspector comprises:

an image signal generator configured to generate the image signal based on the information of the substrate provided from the information-obtainer;

a storage configured to store information of a normal substrate and information of a defect in a previous substrate as the reference; and

a defect determining member comparing the image signal with the reference to generate a defect detection signal.

10. A semiconductor fabrication apparatus comprising:

first and second process chambers;

a load-lock chamber configured to receive a plurality of substrates to be loaded into the first process chamber or the second process chamber;

a transfer chamber arranged between the first process chamber, the second process chamber and the load-lock chamber to successively transfer the substrates to the first process chamber, the second process chamber or the load-lock chamber; and

a defect inspector arranged in the transfer chamber to detect a defect of the substrates based on image signals of the substrates being transferred in the transfer chamber, the defect inspector configured to move along a transferring direction of the substrates, the defect inspector including an illuminator configured to provide an illumination light,

wherein the illuminator comprises a first sub-light source configured to irradiate a first light to a first substrate, which enters into the transfer chamber first, and a second sub-light source configured to irradiate a second light to a second substrate, which enters into the transfer chamber subsequent to the first substrate.

11. The semiconductor fabrication apparatus of claim 10 , wherein the defect inspector comprises at least one successive photographer successively photographing at least one portion of the substrate and accumulating the photographed signals to output a successive image signal.

12. The semiconductor fabrication apparatus of claim 11 , wherein the successive photographer is inclined relative to the surface of the substrate.

13. The semiconductor fabrication apparatus of claim 11 , wherein the illuminator is configured to provide the successive photographer with the illumination light.

14. The semiconductor fabrication apparatus of claim 13 , wherein at least one of incident angles, illuminations and wavelengths of the illumination light from the first and second sub-light sources are different from each other.

15. The semiconductor fabrication apparatus of claim 14 , wherein the first and second sub-light sources are located at different positions to simultaneously provide the substrate with the illumination light.

16. The semiconductor fabrication apparatus of claim 11 , wherein the defect inspector further comprises an optical path changer changing an optical path of a light exiting from the substrate to concentrate the light on the successive photographer.

17. A semiconductor fabrication apparatus comprising:

a first process chamber, a second process chamber, a load-lock chamber, and a transfer chamber,

wherein the transfer chamber includes a transferring member for transferring a substrate between the first process chamber, the second process chamber and the load-lock chamber, and a defect inspector configured to detect a defect of the substrate,

wherein at least one part of the defect inspector is configured to move along a transferring direction of the substrate being transferred in the transfer chamber, and

wherein the defect inspector includes a light source having a first sub-light source configured to irradiate a first light to a first substrate, which transfers first, and a second sub-light source configured to irradiate a second light to a second substrate, which transfers later.