Granted Patent B2

US 12,255,633 · App. 17/722,344 · Granted Mar 18, 2025

Inventors: Luke Myers (Santa Barbara, CA); Wei Yang (Goleta, CA); Andrew Guyette (San Mateo, CA); Greg Dyer (Santa Barbara, CA)

Assignee: MURATA MANUFACTURING CO., LTD.

H03H9/605H03H9/13H03H9/205

Abstract

Claims (38)

1. A bandpass filter comprising:

a ladder filter circuit comprising two or more shunt transversely-excited film bulk acoustic resonators (XBARs) and two or more series XBARs,

wherein the two or more shunt XBARs and the two or more series XBARs each comprise a diaphragm comprising a lithium niobate (LN) piezoelectric plate,

wherein the diaphragm of each of the two or more shunt XBARs has an LN-equivalent thickness greater than or equal to 360 nm, and the diaphragm of each of the two or more series XBARs has a diaphragm having an LN-equivalent thickness less than or equal to 375 nm,

wherein the at least one series XBAR of the two or more series XBAR comprises a dielectric layer with a thickness of tfsd on the diaphragm, and

wherein the LN-equivalent thickness of the at least one series resonator is teqa=tp+ka(tfsd), where teqa is the LN-equivalent thickness of the at least one series resonator, tp is a thickness of the LN piezoelectric plate of the at least one series resonator, and ka is a proportionality constant that equals approximately 0.52.

2. The bandpass filter of claim 1 , wherein the LN-equivalent thickness of the diaphragm of each of the two or more shunt XBARs is greater than or equal to 370 nm.

3. The bandpass filter of claim 1 , wherein the LN-equivalent thickness of the diaphragm of each of the two or more series XBARs is less than or equal to 365 nm.

4. The bandpass filter of claim 1 , wherein the LN piezoelectric plate of the two or more series XBARs has a thickness less than or equal to a thickness of the LN piezoelectric plate of the two or more series-shunt resonators.

5. The bandpass filter of claim 1 , wherein the LN piezoelectric plate of the two or more shunt XBARs and the two or more series XBARs has Euler angles [0°, 0°, 90°].

6. A bandpass filter comprising:

a ladder filter circuit comprising two or more shunt transversely-excited film bulk acoustic resonators (XBARs) and two or more series XBARS,

wherein the two or more shunt XBARs and the two or more series XBARs each comprise a diaphragm comprising a lithium niobate (LN) piezoelectric plate,

wherein the diaphragm of each of the two or more shunt XBARs has an LN-equivalent thickness greater than or equal to 310 nm, and the diaphragm of each of the two or more series XBARs has an LN-equivalent thickness less than or equal to 305 nm,

wherein the at least one shunt resonator of the two or more shunt resonators comprises a dielectric layer with a thickness of tdp on the diaphragm, and

wherein the LN-equivalent thickness of the at least one shunt resonator is teqr=tp+kr(tfsd), where teqr is the LN-equivalent thickness of the at least one shunt resonator, tp is a thickness of the LN piezoelectric plate of the at least one shunt resonator, and kr is a proportionality constant that equals 0.54.

7. A bandpass filter comprising:

a substrate comprising a plurality of cavities;

a lithium niobate (LN) plate supported by the substrate;

a plurality of diaphragms, each diaphragm comprising a respective portion of the piezoelectric plate that is over a respective cavity of the plurality of cavities; and

a conductor pattern comprising interdigital transducers (IDTs) of two or more series resonators and two or more shunt resonators, interleaved fingers of each IDT disposed on a respective diaphragm of the plurality of diaphragms,

wherein the diaphragms of the two or more shunt resonators have an LN-equivalent thickness greater than or equal to 360 nm, and the diaphragms of the two or more series resonators have an LN-equivalent thickness less than or equal to 375 nm, and

wherein the LN piezoelectric plate of the two or more shunt resonators and the two or more series resonators has Euler angles [0°, 0°, 90°].

8. The bandpass filter of claim 7 , wherein:

the diaphragms of the two or more series resonators comprise a dielectric layer with a thickness of tfsd, and

the LN-equivalent thickness of each diaphragm of the two or more series resonators is given by:

teqa=tp+ka ( tfsd )

where teqa is the LN-equivalent thickness, tp is a thickness of the LN plate, and ka is a proportionality constant for two or more series resonators.

9. The bandpass filter of claim 8 , wherein the dielectric layer is silicon dioxide and ks=0.52.

10. The bandpass filter of claim 7 , wherein:

the diaphragms of the two or more shunt resonators comprise a dielectric layer with a thickness of tfsd, and

the LN-equivalent thickness of each diaphragm of the two or more shunt resonators is given by:

teqr=tp+kr ( tfsd )

where teqr is the LN-equivalent thickness, tp is a thickness of the LN plate, and kr is a proportionality constant for the two or more shunt resonators.

11. The bandpass filter of claim 10 , wherein the dielectric layer is silicon dioxide and kr=0.54.

12. The bandpass filter of claim 7 , wherein the LN-equivalent thickness of the diaphragms of the two or more shunt resonators is greater than or equal to 370 nm.

13. The bandpass filter of claim 7 , wherein the LN-equivalent thickness of the diaphragms of the two or more series resonators is less than or equal to 365 nm.

14. The bandpass filter of claim 7 , wherein the conductor pattern further comprises conductors to connect the two or more series resonators and the two or more shunt resonators in a ladder filter circuit.

Assignments (2)

Continuity (2)

References Cited (222)