IP Library › Granted Patent US 11,699,391

Granted Patent B2

US 11,699,391 · App. 17/723,613 · Granted Jul 11, 2023

Semiconductor device, display apparatus, and electronic device

Inventors: Hajime Kimura (Atsugi, JP); Takayuki Ikeda (Atsugi, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

G09G3/3225 G09G2300/0876 G09G2310/08

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Quick Facts

Patent No.: US 11,699,391
App. No.: 17/723,613
Granted: Jul 11, 2023
Kind: B2

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Abstract

A semiconductor device includes first to tenth transistors and first to fourth capacitors. Gates of the first and the fourth transistors are electrically connected to each other. First terminals of the first, second, fifth, and eighth transistors are electrically connected to a first terminal of the fourth capacitor. A second terminal of the fifth transistor is electrically connected to a gate of the sixth transistor and a first terminal of the second capacitor. A second terminal of the eighth transistor is electrically connected to a gate of the ninth transistor and a first terminal of the third capacitor. Gates of the second, seventh, and tenth transistors are electrically connected to first terminals of the third and fourth transistors and a first terminal of the first capacitor. First terminals of the sixth and seventh transistors are electrically connected to a second terminal of the second capacitor.

Claims (111)

1. A semiconductor device comprising:

a first transistor;

a second transistor;

a third transistor;

a fourth transistor;

a fifth transistor;

a sixth transistor;

a seventh transistor;

an eighth transistor;

a ninth transistor;

a tenth transistor;

a first capacitor;

a second capacitor;

a third capacitor; and

a fourth capacitor,

wherein a first gate of the first transistor is electrically connected to a first gate of the fourth transistor,

wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor, one of a source and a drain of the fifth transistor, one of a source and a drain of the eighth transistor, and a first terminal of the fourth capacitor,

wherein the other of the source and the drain of the fifth transistor is electrically connected to a first gate of the sixth transistor and a first terminal of the second capacitor,

wherein the other of the source and the drain of the eighth transistor is electrically connected to a first gate of the ninth transistor and a first terminal of the third capacitor,

wherein a first gate of the second transistor is electrically connected to a first terminal of the first capacitor, one of a source and a drain of the third transistor, one of a source and a drain of the fourth transistor, a first gate of the seventh transistor, and a first gate of the tenth transistor,

wherein one of a source and a drain of the seventh transistor is electrically connected to one of a source and a drain of the sixth transistor and a second terminal of the second capacitor, and

wherein one of a source and a drain of the tenth transistor is electrically connected to one of a source and a drain of the ninth transistor and a second terminal of the third capacitor.

2. The semiconductor device according to claim 1 ,

wherein each of the fifth transistor and the eighth transistor comprises a first gate which is one of a front gate and a back gate, and a second gate which is the other of the front gate and the back gate,

wherein the first gate of the fifth transistor is electrically connected to the second gate of the fifth transistor, and

wherein the first gate of the eighth transistor is electrically connected to the second gate of the eighth transistor.

3. The semiconductor device according to claim 1 ,

wherein each of the first transistor, the sixth transistor, and the ninth transistor comprises the first gate which is one of a front gate and a back gate, and a second gate which is the other of the front gate and the back gate,

wherein the first gate of the first transistor is electrically connected to the second gate of the first transistor,

wherein the first gate of the sixth transistor is electrically connected to the second gate of the sixth transistor, and

wherein the first gate of the ninth transistor is electrically connected to the second gate of the ninth transistor.

4. The semiconductor device according to claim 1 ,

wherein each of the seventh transistor and the tenth transistor comprises the first gate which is one of a front gate and a back gate, and a second gate which is the other of the front gate and the back gate,

wherein the second gate of the seventh transistor is electrically connected to the other of the source and the drain of the seventh transistor, and

wherein the second gate of the tenth transistor is electrically connected to the other of the source and the drain of the tenth transistor.

5. A semiconductor device comprising:

a first transistor;

a second transistor;

a third transistor;

a fourth transistor;

a fifth transistor;

a sixth transistor;

a seventh transistor;

an eighth transistor;

a ninth transistor;

a tenth transistor;

an eleventh transistor;

a first capacitor;

a second capacitor; and

a third capacitor,

wherein a first gate of the first transistor is electrically connected to one of a source and a drain of the eleventh transistor,

wherein the other of the source and the drain of the eleventh transistor is electrically connected to a first gate of the fourth transistor,

wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor, one of a source and a drain of the fifth transistor, and one of a source and a drain of the eighth transistor,

wherein the other of the source and the drain of the fifth transistor is electrically connected to a first gate of the sixth transistor and a first terminal of the second capacitor,

wherein the other of the source and the drain of the eighth transistor is electrically connected to a first gate of the ninth transistor and a first terminal of the third capacitor,

wherein one of a source and a drain of the seventh transistor is electrically connected to one of a source and a drain of the sixth transistor and a second terminal of the second capacitor, and

wherein one of a source and a drain of the tenth transistor is electrically connected to one of a source and a drain of the ninth transistor and a second terminal of the third capacitor.

6. The semiconductor device according to claim 5 ,

wherein the eleventh transistor comprises a first gate which is one of a front gate and a back gate, and a second gate which is the other of the front gate and the back gate, and

wherein the first gate of the eleventh transistor is electrically connected to the second gate of the eleventh transistor.

7. The semiconductor device according to claim 5 , further comprising:

a twelfth transistor,

wherein the first gate of the first transistor is electrically connected to one of a source and a drain of the twelfth transistor,

wherein the other of the source and the drain of the eleventh transistor is electrically connected to a first gate of the eleventh transistor and the other of the source and the drain of the twelfth transistor, and

wherein the other of the source and the drain of the sixth transistor is electrically connected to a first gate of the twelfth transistor.

8. The semiconductor device according to claim 5 ,

wherein the first gate of the fifth transistor is electrically connected to the second gate of the fifth transistor, and

wherein the first gate of the eighth transistor is electrically connected to the second gate of the eighth transistor.

9. The semiconductor device according to claim 5 ,

wherein the first gate of the first transistor is electrically connected to the second gate of the first transistor,

wherein the first gate of the sixth transistor is electrically connected to the second gate of the sixth transistor, and

wherein the first gate of the ninth transistor is electrically connected to the second gate of the ninth transistor.

10. The semiconductor device according to claim 5 ,

wherein the second gate of the seventh transistor is electrically connected to the other of the source and the drain of the seventh transistor, and

wherein the second gate of the tenth transistor is electrically connected to the other of the source and the drain of the tenth transistor.

11. A semiconductor device comprising:

a first transistor;

a second transistor;

a third transistor;

a fourth transistor;

a sixth transistor;

a seventh transistor;

a ninth transistor;

a tenth transistor;

a first capacitor;

a second capacitor; and

a third capacitor,

wherein a first gate of the first transistor is electrically connected to a first gate of the fourth transistor,

wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor, a first gate of the sixth transistor, a first terminal of the second capacitor, a first gate of the ninth transistor, and a first terminal of the third capacitor,

wherein one of a source and a drain of the seventh transistor is electrically connected to one of a source and a drain of the sixth transistor and a second terminal of the second capacitor, and

wherein one of a source and a drain of the tenth transistor is electrically connected to one of a source and a drain of the ninth transistor and a second terminal of the third capacitor.

12. The semiconductor device according to claim 11 , further comprising:

a fifth transistor; and

an eighth transistor,

wherein the one of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the fifth transistor and one of a source and a drain of the eighth transistor,

wherein the other of the source and the drain of the fifth transistor is electrically connected to the first gate of the sixth transistor and the first terminal of the second capacitor, and

wherein the other of the source and the drain of the eighth transistor is electrically connected to the first gate of the ninth transistor and the first terminal of the third capacitor.

13. The semiconductor device according to claim 11 ,

wherein the first gate of the first transistor is electrically connected to the second gate of the first transistor,

wherein the first gate of the sixth transistor is electrically connected to the second gate of the sixth transistor, and

wherein the first gate of the ninth transistor is electrically connected to the second gate of the ninth transistor.

14. The semiconductor device according to claim 11 ,

wherein the second gate of the seventh transistor is electrically connected to the other of the source and the drain of the seventh transistor, and

wherein the second gate of the tenth transistor is electrically connected to the other of the source and the drain of the tenth transistor.

Assignments (1)

ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 19, 2022

From: KIMURA, HAJIME; IKEDA, TAKAYUKI

To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Reel/Frame 059633/0559 →

Priority Claims (1)

JP 2021-081532 · May 13, 2021 · national

Continuity (1)

Related Publication 20220366845A1 · Nov 17, 2022

Cited By (2)

US 12,324,261 US 12,620,362