Catalyst for electrochemical cell and method of manufacturing same
Disclosed are a catalyst for an electrochemical cell and a method of manufacturing the catalyst. The catalyst includes a support, a first catalyst supported on the support, wherein the first catalyst is a catalyst for hydrogen oxidation reaction (HOR) or oxygen reduction reaction (ORR), a second catalyst supported on the first catalyst, wherein the second catalyst is a catalyst for oxygen evolution reaction (OER), and a protective layer formed on the first catalyst and the second catalyst.
1. A catalyst for an electrochemical cell, the catalyst comprising:
a support;
a first catalyst supported on the support, wherein the first catalyst is a catalyst for a hydrogen oxidation reaction (HOR) or oxygen reduction reaction (ORR);
a second catalyst, in the form of particles, deposited on the first catalyst, and wherein the second catalyst is a catalyst for an active oxygen evolution reaction (OER); and
a protective layer formed on the first catalyst and the second catalyst.
2. The catalyst according to claim 1 , wherein the second catalyst is supported on the support, and the protective layer is formed on the first catalyst and the second catalyst.
3. The catalyst according to claim 1 , wherein the second catalyst comprises one or more selected from the group consisting of ruthenium (Ru), iridium (Ir), titanium (Ti), and oxides thereof.
4. The catalyst according to claim 1 , wherein the protective layer comprises one or more selected from the group consisting of titanium oxide (TiO x ), zinc oxide (ZnO x ), copper oxide (CuO x ), silicon (Si), nickel (Ni), iron (Fe), and graphitic carbon nitride, wherein x is between 1 and 3.
5. The catalyst according to claim 1 , wherein the protective layer has a thickness of about 0.8 to 5 nm.
6. A method of manufacturing a catalyst for an electrochemical cell, the method comprising:
preparing a starting material in which a first catalyst that is active in hydrogen oxidation reaction (HOR) or oxygen reduction reaction (ORR) is supported on a support;
introducing the starting material into a reactor of a powder-type atomic layer deposition (ALD) device;
vaporizing a precursor of a second catalyst that is active in oxygen evolution reaction (OER) and introducing the vaporized precursor of the second catalyst into the rotary reactor using a carrier gas;
causing a first reaction while rotating the rotary reactor such that the precursor of the second catalyst reacts on the first catalyst;
removing residual gas in the rotary reactor using a purging gas;
introducing a reductant into the rotary reactor to reduce the reaction product of the first reaction such that the second catalyst is supported on the first catalyst;
removing residual gas in the rotary reactor using a purging gas;
vaporizing a precursor of a protective layer and introducing the vaporized precursor of the protective layer into the rotary reactor;
causing a second reaction while rotating the rotary reactor such that the precursor of the protective layer is formed on at least one of the first catalyst and the second catalyst; and
introducing an oxidant into the rotary reactor to oxidize the reaction product of the second reaction such that a protective layer is formed on the first catalyst and the second catalyst.
7. The method according to claim 6 , wherein the second catalyst is supported on the first catalyst, and
the protective layer is formed on the first catalyst and the second catalyst.
8. The method according to claim 6 , wherein the second catalyst comprises one or more selected from the group consisting of ruthenium (Ru), iridium (Ir), titanium (Ti), and oxides thereof.
9. The method according to claim 6 , wherein the carrier gas is fed at a flow rate of about 100 to 1000 mL/min to introduce the precursor of the second catalyst into the rotary reactor.
10. The method according to claim 6 , wherein the first reaction is performed under conditions in which the rotation speed of the rotary reactor is in a range of about 30 to 60 rpm, the temperature of the rotary reactor is in a range of about 200° C. to 360° C., and a reaction duration is in a range of about 2 to 30 seconds.
11. The method according to claim 6 , wherein the protective layer comprises one or more selected from the group consisting of titanium oxide (TiO x ), zinc oxide (ZnO x ), copper oxide (CuO x ), silicon (Si), nickel (Ni), iron (Fe), and graphitic carbon nitride, wherein x is between 1 and 3.
12. The method according to claim 6 , wherein the carrier gas is fed at a flow rate of about 100 to 1000 mL/min to introduce the vaporized precursor of the protective layer into the rotary reactor.
13. The method according to claim 6 , wherein the second reaction is performed under conditions in which the rotation speed of the rotary reactor is in a range of about 30 to 60 rpm, the temperature of the rotary reactor is in a range of about 70° C. to 250° C., and a reaction duration is in a range of about 2 to 30 seconds.
14. The method according to claim 6 , further comprising:
introducing an oxidant into the rotary reactor after completion of the second reaction to oxidize the reaction product of the second reaction.
15. The method according to claim 14 , wherein the oxidant comprises one or more material selected from the group consisting of water vapor (H 2 O), oxygen (O 2 ), and ozone (O 3 ).
16. The method according to claim 6 , wherein the protective layer has a thickness of about 0.8 to 5 nm.
17. The method according to claim 6 , wherein the starting material comprises a self-assembled monolayer (SAM) formed on only the surface of the first catalyst supported on the support.
18. The method according to claim 17 , wherein the second catalyst is supported on the support, and the protective layer is formed on the first catalyst and the second catalyst.
19. The method according to claim 17 , wherein the second catalyst is supported on the starting material, and is thermally treated at the atmospheric pressure to remove the self-assembled monolayer formed on the surface of the first catalyst.