Magnetic memory device including capping pattern on non-magnetic pattern
A magnetic memory device may include a pinned magnetic pattern and a free magnetic pattern which are stacked on a substrate, a tunnel barrier pattern between the pinned magnetic pattern and the free magnetic pattern, a capping pattern on the free magnetic pattern, and a non-magnetic pattern between the free magnetic pattern and the capping pattern. The free magnetic pattern may be between the tunnel barrier pattern and the capping pattern. The non-magnetic pattern may include a first non-magnetic metal and boron, and the capping pattern includes a second non-magnetic metal. A boride formation energy of the second non-magnetic metal may be higher than a boride formation energy of the first non-magnetic metal.
1 . A magnetic memory device comprising:
a substrate;
a pinned magnetic pattern and a free magnetic pattern which are stacked on the substrate;
a tunnel barrier pattern between the pinned magnetic pattern and the free magnetic pattern;
a capping pattern on the free magnetic pattern, the free magnetic pattern being between the tunnel barrier pattern and the capping pattern; and
a non-magnetic pattern between the free magnetic pattern and the capping pattern, wherein
the non-magnetic pattern includes a first non-magnetic metal and boron, the capping pattern includes a second non-magnetic metal, and
a boride formation energy of the second non-magnetic metal is higher than a boride formation energy of the first non-magnetic metal, wherein
the capping pattern further includes oxygen.
2 . The magnetic memory device of claim 1 , wherein
the non-magnetic pattern further includes oxygen, and
an oxide formation energy of the second non-magnetic metal is higher than an oxide formation energy of the first non-magnetic metal.
3 . The magnetic memory device of claim 2 , wherein
the free magnetic pattern includes a magnetic element, and
the oxide formation energy of the first non-magnetic metal is lower than an oxide formation energy of the magnetic element.
4 . The magnetic memory device of claim 3 , wherein the free magnetic pattern further includes boron.
5 . The magnetic memory device of claim 1 , wherein the capping pattern is a metal layer including the second non-magnetic metal.
6 . The magnetic memory device of claim 1 , wherein the capping pattern is a metal oxide layer including an oxide of the second non-magnetic metal.
7 . The magnetic memory device of claim 1 , wherein
the capping pattern comprises a first capping pattern and a second capping pattern,
the first capping pattern is adjacent to the non-magnetic pattern,
the second capping pattern is spaced apart from the non-magnetic pattern,
one of the first capping pattern and the second capping pattern is a metal layer including the second non-magnetic metal, and
an other of the first capping pattern and the second capping pattern is a metal oxide layer including an oxide of the second non-magnetic metal.
8 . The magnetic memory device of claim 1 , wherein each of the pinned magnetic pattern and the free magnetic pattern has a magnetization direction substantially perpendicular to an interface between the free magnetic pattern and the tunnel barrier pattern.
9 . The magnetic memory device of claim 1 , further comprising:
a lower electrode between the substrate and the pinned magnetic pattern; and
an upper electrode on the capping pattern, wherein
the pinned magnetic pattern is between the substrate and the tunnel barrier pattern.
10 . The magnetic memory device of claim 1 , further comprising:
a lower electrode between the substrate and the capping pattern; and
an upper electrode on the pinned magnetic pattern, wherein
the free magnetic pattern is between the substrate and the tunnel barrier pattern, and
the capping pattern is disposed between the substrate and the free magnetic pattern.
11 . The magnetic memory device of claim 1 , wherein:
the free magnetic pattern has a first surface adjacent to the tunnel barrier pattern and a second surface opposite the first surface,
the capping pattern is on the second surface of the free magnetic pattern,
the non-magnetic pattern is between the second surface of the free magnetic pattern and the capping pattern, wherein
the second non-magnetic metal of the capping pattern is different from the first non-magnetic metal of the non-magnetic pattern, and
the second non-magnetic metal includes at least one of molybdenum (Mo), tungsten (W), chromium (Cr), rhenium (Re), or manganese (Mn).
12 . The magnetic memory device of claim 11 , wherein the non-magnetic pattern further includes oxygen.
13 . The magnetic memory device of claim 12 , wherein the first non-magnetic metal includes tantalum (Ta).
14 . The magnetic memory device of claim 8 , wherein the capping pattern includes a metal layer including the second non-magnetic metal.
15 . The magnetic memory device of claim 11 , wherein the capping pattern is a metal oxide layer including an oxide of the second non-magnetic metal.
16 . The magnetic memory device of claim 11 , wherein
the capping pattern comprises a first capping pattern and a second capping pattern,
the first capping pattern is adjacent to the non-magnetic pattern,
the second capping pattern is spaced apart from the non-magnetic pattern,
one of the first capping pattern and the second capping pattern is a metal layer including the second non-magnetic metal, and
an other of the first capping pattern and the second capping pattern is a metal oxide layer including an oxide of the second non-magnetic metal.
17 . The magnetic memory device of claim 11 , wherein
the free magnetic pattern comprises a first free magnetic pattern adjacent to the tunnel barrier pattern and a second free magnetic pattern adjacent to the non-magnetic pattern,
each of the first free magnetic pattern and the second free magnetic pattern includes a magnetic element, and
the second free magnetic pattern further includes boron.
18 . The magnetic memory device of claim 17 , wherein each of the pinned magnetic pattern and the free magnetic pattern has a magnetization direction substantially perpendicular to the first surface of the free magnetic pattern.
19 . The magnetic memory device of claim 8 , wherein
the capping pattern includes at least one of molybdenum (Mo), tungsten (W), chromium (Cr), rhenium (Re), or manganese (Mn).