Photomask blank and photomask using the same
Disclosed is a photomask comprising: a transparent substrate; and a multi-layer light shielding pattern film disposed on the transparent substrate, wherein the multi-layer light shielding pattern film comprises: a first light shielding film; and a second light shielding film disposed on the first light shielding film and comprising a transition metal and at least one selected from the group consisting of oxygen and nitrogen, and wherein a surface roughness Wr of the measuring zone satisfies Equation 1 below: 0 nm< Wr−Wo ≤3 nm [Equation 1] where, in the Equation 1 above, Wo is a surface roughness of the measuring zone before soaking and washing processes, Wr is a surface roughness of the measuring zone after soaking in SC-1 (standard clean-1) solution and washing with ozone water, and the SC-1 solution comprises NH 4 OH, H 2 O 2 , and H 2 O.
1 . A photomask blank comprising:
a transparent substrate; and
a multi-layer light shielding film disposed on the transparent substrate, wherein the multi-layer light shielding film comprises:
a first light shielding film; and
a second light shielding film disposed on the first light shielding film and comprising a transition metal and at least one selected from the group consisting of oxygen and nitrogen,
wherein the second light shielding film comprises an upper light shielding layer and an adhesion strengthening layer disposed between the upper light shielding layer and the first light shielding film,
wherein the first light shielding film comprises a transition metal in an amount of 35 to 55 at %, and
wherein the second light shielding film comprises the transition metal in an amount of 55 to 75 at %,
wherein the second light shielding film is disposed as an uppermost surface of the multi-layer light shielding film,
wherein a side surface of the multi-layer light shielding film comprises a measuring zone corresponding to a zone between a first spot spaced apart from a first point on an upper boundary of the first light shielding film in a direction to a lower boundary of the first light shielding film and a second spot spaced apart from a second point on a lower boundary of the second light shielding film in a direction to an upper boundary of the second light shielding film,
wherein a surface roughness Wr of the measuring zone satisfies Equation 1 below:
0 nm< Wr−Wo ≤3 nm [Equation 1]
where, in the Equation 1 above, Wo is a surface roughness of the measuring zone before soaking and washing processes, Wr is a surface roughness of the measuring zone after soaking in SC-1 (standard clean-1) solution and washing with ozone water, and the SC-1 solution comprises NH 4 OH, H 2 O 2 , and H 2 O,
wherein the adhesion strengthening layer comprises a transition metal, and an amount of the transition metal in the adhesion strengthening layer is higher than an amount of the transition metal in the first light shielding film,
wherein a composition of the first light shielding film is different from a composition of the second light shielding film,
wherein the SC-1 solution comprises NH 4 OH of 14.3 wt %, H 2 O 2 of 14.3 wt %, H 2 O of 71.4 wt % based on a total weight of the SC-1 solution,
wherein the photomask is soaked in the SC-1 solution for 800 seconds, and
wherein the ozone water comprises 20 ppm of ozone in an ultrapure water based on a total weight of the ozone water,
wherein an amount of the transition metal in the adhesion strengthening layer is greater than an amount of the transition metal in the upper light shielding layer, and
wherein a ratio of a thickness of the adhesion strengthening layer compared to a thickness of the first light shielding film is 0.005 to 0.05.
2 . The photomask blank of claim 1 , wherein the first spot is spaced apart from the first point by 5 nm and the second spot is spaced apart from the second point by 5 nm.
3 . The photomask blank of claim 1 , wherein the first light shielding film and the second light shielding film are disposed to form an interface between the first light shielding film and the second light shielding film, and
wherein the surface roughness (Wr) is the greatest in the measuring zone corresponding to a zone comprising the interface.
4 . The photomask blank of claim 1 , wherein a roughness (Rz) of a lower surface of the second light shielding film is 4 nm or more.
5 . The photomask blank of claim 1 , wherein one or more of the first light shielding film and the second light shielding film comprise a transition metal, oxygen, and nitrogen, respectively.
6 . The photomask blank of claim 5 , wherein a sum of an amount of the oxygen and an amount of the nitrogen in the first light shielding film is 40 to 65 at %, and
wherein a sum of an amount of the oxygen and an amount of the nitrogen in the second light shielding film is 20 to 45 at %.
7 . The photomask blank of claim 5 , wherein the transition metal comprises at least one selected from the group consisting of Cr, Ta, Ti, and Hf.
8 . The photomask blank of claim 1 , wherein a ratio of the amount of the transition metal in the adhesion strengthening layer compared to the amount of the transition metal in the first light shielding film is 1.1 to 2.5.
9 . The photomask blank of claim 1 , wherein a thickness of the adhesion strengthening layer is 5 to 25 Å.
10 . The photomask blank of claim 1 , wherein a height skewness (Rsk) of an upper surface of the adhesion strengthening layer after formation of the adhesion strengthening layer is −1 or less.
11 . The photomask blank of claim 1 , wherein a kurtosis (Rku) of an upper surface of the adhesion strengthening layer after formation of the adhesion strengthening layer is 7 or more.
12 . The photomask blank of claim 1 , wherein an average of surface heights (Ra) measured across an upper surface of the adhesion strengthening layer just after formation of the adhesion strengthening layer is 0.5 nm or more.
13 . The photomask blank of claim 1 , wherein a mean roughness depth (Rz) of an upper surface of the adhesion strengthening layer after formation of the adhesion strengthening layer is 6 nm or more.
14 . A photomask comprising:
a transparent substrate; and
a multi-layer light shielding pattern film disposed on the transparent substrate,
wherein the multi-layer light shielding pattern film comprises:
a first light shielding film; and
a second light shielding film disposed on the first light shielding film and comprising a transition metal and at least one selected from the group consisting of oxygen and nitrogen,
wherein the second light shielding film comprises an upper light shielding layer and an adhesion strengthening layer disposed between the upper light shielding layer and the first light shielding film,
wherein the first light shielding film comprises a transition metal in an amount of 35 to 55 at %, and
wherein the second light shielding film comprises the transition metal in an amount of 55 to 75 at %,
wherein the second light shielding film is disposed as an uppermost surface of the multi-layer light shielding film,
wherein a side surface of the multi-layer light shielding pattern film comprises a measuring zone corresponding to a zone between a first spot spaced apart from a first point on an upper boundary of the first light shielding film in a direction to a lower boundary of the first light shielding film and a second spot spaced apart from a second point on a lower boundary of the second light shielding film in a direction to an upper boundary of the second light shielding film,
wherein a surface roughness Wr of the measuring zone satisfies Equation 1 below:
0 nm< Wr−Wo ≤3 nm [Equation 1]
where, in the Equation 1 above, Wo is a surface roughness of the measuring zone before soaking and washing processes, Wr is a surface roughness of the measuring zone after soaking in SC-1 (standard clean-1) solution and washing with ozone water, and the SC-1 solution comprises NH 4 OH, H 2 O 2 , and H 2 O,
wherein the adhesion strengthening layer comprises a transition metal, and an amount of the transition metal in the adhesion strengthening layer is higher than an amount of the transition metal in the first light shielding film,
wherein a composition of the first light shielding film is different from a composition of the second light shielding film,
wherein the SC-1 solution comprises NH 4 OH of 14.3 wt %, H 2 O 2 of 14.3 wt %, H 2 O of 71.4 wt % based on a total weight of the SC-1 solution,
wherein the photomask is soaked in the SC-1 solution for 800 seconds, and
wherein the ozone water comprises 20 ppm of ozone in an ultrapure water based on a total weight of the ozone water,
wherein an amount of the transition metal in the adhesion strengthening layer is greater than an amount of the transition metal in the upper light shielding layer, and
wherein a ratio of a thickness of the adhesion strengthening layer compared to a thickness of the first light shielding film is 0.005 to 0.05.
15 . A method of manufacturing a semiconductor element, the method comprising:
disposing a light source, a photomask, and a semiconductor wafer, on which a resist film has been applied in a sputtering chamber;
selectively transmitting an incident light from the light source through the photomask; and
developing a pattern on the semiconductor wafer,
wherein the photomask comprises:
a transparent substrate; and
a multi-layer light shielding pattern film disposed on the transparent substrate, wherein the multi-layer light shielding pattern film comprises:
a first light shielding film; and
a second light shielding film disposed on the first light shielding film and comprising a transition metal and at least one selected from the group consisting of oxygen and nitrogen,
wherein the second light shielding film comprises an upper light shielding layer and an adhesion strengthening layer disposed between the upper light shielding layer and the first light shielding film,
wherein the first light shielding film comprises a transition metal in an amount of 35 to 55 at %, and
wherein the second light shielding film comprises the transition metal in an amount of 55 to 75 at %,
wherein the second light shielding film is disposed as an uppermost surface of the multi-layer light shielding film,
wherein a side surface of the multi-layer light shielding pattern film comprises a measuring zone corresponding to a zone between a first spot spaced apart from a first point on an upper boundary of the first light shielding film in a direction to a lower boundary of the first light shielding film and a second spot spaced apart from a second point on a lower boundary of the second light shielding film in a direction to an upper boundary of the second light shielding film,
wherein a surface roughness Wr of the measuring zone satisfies Equation 1 below:
0 nm< Wr−Wo ≤3 nm [Equation 1]
where, in the Equation 1 above, Wo is a surface roughness of the measuring zone before soaking and washing processes, Wr is a surface roughness of the measuring zone after soaking in SC-1 (standard clean-1) solution and washing with ozone water, and the SC-1 solution comprises NH 4 OH, H 2 O 2 , and H 2 O,
wherein the adhesion strengthening layer comprises a transition metal, and an amount of the transition metal in the adhesion strengthening layer is higher than an amount of the transition metal in the first light shielding film,
wherein a composition of the first light shielding film is different from a composition of the second light shielding film,
wherein the SC-1 solution comprises NH 4 OH of 14.3 wt %, H 2 O 2 of 14.3 wt %, H 2 O of 71.4 wt % based on a total weight of the SC-1 solution,
wherein the photomask is soaked in the SC-1 solution for 800 seconds,
wherein the ozone water comprises 20 ppm of ozone in an ultrapure water based on a total weight of the ozone water,
wherein an amount of the transition metal in the adhesion strengthening layer is greater than an amount of the transition metal in the upper light shielding layer, and
wherein a ratio of a thickness of the adhesion strengthening layer compared to a thickness of the first light shielding film is 0.005 to 0.05.