Semiconductor device and method of fabricating the same
Disclosed are semiconductor packages and their fabrication methods. The semiconductor package comprises a circuit substrate, a semiconductor chip mounted on the circuit substrate, and a thermal radiation film covering the semiconductor chip on the circuit substrate. The semiconductor chip includes first lateral surfaces opposite to each other in a first direction and second lateral surfaces opposite to each other in a second direction that intersects the first direction. A first width of the first lateral surface is less than a second width of the second lateral surface. The thermal radiation film covers a top surface of the semiconductor chip and entirely surrounds the first and second lateral surfaces of the semiconductor chip. The thermal radiation film has slits directed toward the first lateral surfaces from ends of the thermal radiation film.
1. A semiconductor package, comprising:
a circuit substrate;
a semiconductor chip mounted on the circuit substrate; and
a thermal radiation film covering the semiconductor chip on the circuit substrate,
wherein the semiconductor chip includes:
first lateral surfaces that are opposite to each other in a first direction; and
second lateral surfaces that are opposite to each other in a second direction that intersects the first direction,
wherein a first width of the first lateral surfaces is less than a second width of the second lateral surfaces,
wherein the thermal radiation film covers a top surface of the semiconductor chip and covers the first lateral surfaces and the second lateral surfaces of the semiconductor chip, and
wherein the thermal radiation film has a plurality of slits that are directed toward the first lateral surfaces from ends of the thermal radiation film.
2. The semiconductor package of claim 1 , wherein the thermal radiation film includes:
first ends that are opposite to each other in the first direction; and
second ends that are opposite to each other in the second direction,
wherein each of the slits extends from one of the first ends toward a facing one of the first lateral surfaces.
3. The semiconductor package of claim 2 , wherein the slits have linear shapes that extend from the first ends toward the first lateral surfaces.
4. The semiconductor package of claim 2 , wherein a width of the slit increases in a direction receding from the one of the first ends and approaching the facing one of the first lateral surfaces.
5. The semiconductor package of claim 1 , wherein the semiconductor chip is hermetically sealed by the thermal radiation film and the circuit substrate.
6. The semiconductor package of claim 1 , wherein a distance between an end of each of the slits of the thermal radiation film and a facing one of the first lateral surfaces of the semiconductor chip is about 1% to about 20% of the second width of the second lateral surfaces of the semiconductor chip.
7. The semiconductor package of claim 1 , wherein the thermal radiation film includes:
an adhesion layer attached to a top surface of the circuit substrate and the top surface of the semiconductor chip;
a thermal conduction layer on the adhesion layer; and
a protection layer on the thermal conduction layer,
wherein a shape of the adhesion layer, a shape of the thermal conduction layer, and a shape of the protection layer are substantially the same in a plan view, and
wherein the adhesion layer, the thermal conduction layer, and the protection layer are vertically aligned with each other.
8. The semiconductor package of claim 1 , wherein at least two slits are on each of the first lateral surfaces,
wherein the at least two slits are spaced apart from each other in the second direction.
9. The semiconductor package of claim 1 , wherein
the thermal radiation film has a rectangular shape in a plan view, and
the slits extend toward the semiconductor chip from short sides of the thermal radiation film.
10. The semiconductor package of claim 1 , wherein the thermal radiation film is attached to the top surface of the circuit substrate at an area that entirely surrounds the semiconductor chip.
11. The semiconductor package of claim 1 , wherein the thermal radiation film is in contact with the first lateral surfaces and the second lateral surfaces.
12. The semiconductor package of claim 1 , wherein a portion of the thermal radiation film adjacent to the first lateral surfaces is attached to the circuit substrate.
13. A semiconductor package, comprising:
a base film;
a semiconductor chip on the base film, the semiconductor chip having a short lateral surface and a long lateral surface which has a width greater than a width of the short lateral surface; and
a thermal radiation film covering the semiconductor chip on the base film,
wherein the thermal radiation film includes:
a central part that overlaps an entirety of the semiconductor chip; and
a peripheral part that surrounds the central part and is attached to the base film,
wherein the thermal radiation film has a slit on the peripheral part and adjacent to the short lateral surface of the semiconductor chip,
wherein the thermal radiation film includes:
an adhesion layer;
a thermal conduction layer on the adhesion layer; and
a protection layer on the thermal conduction layer,
wherein a shape of the adhesion layer, a shape of the thermal conduction layer, and a shape of the protection layer in a plan view are substantially the same, and
the thermal radiation film covers an entirety of each of a top surface of the semiconductor chip, the short lateral surfaces of the semiconductor chip, and the long lateral surfaces of the semiconductor chip.
14. The semiconductor package of claim 13 , wherein, in a plan view, the slit has one of a linear shape and a rectangular shape that extend from an end of the thermal radiation film toward the short lateral surface of the semiconductor chip.
15. The semiconductor package of claim 13 , wherein, in a plan view, the slit has a shape whose width increases in a direction receding from an end of the thermal radiation film and approaching the short lateral surface of the semiconductor chip.
16. The semiconductor package of claim 13 , wherein
the semiconductor chip includes a pair of short lateral surfaces, and the pair of short lateral surfaces are opposite to each other in a first direction, and
the thermal radiation film includes a pair of slits, and each of the pair of slits is provided on one of the short lateral surfaces of the semiconductor chip.
17. The semiconductor package of claim 13 , wherein the base film and the central part of the thermal radiation film provide a hermetically sealed space in which the semiconductor chip is accommodated.
18. The semiconductor package of claim 13 , wherein a distance between an end of the slit of the thermal radiation film and the short lateral surface of the semiconductor chip is in a range of about 1% to about 20% of the width of the long lateral surface of the semiconductor chip.
19. The semiconductor package of claim 13 , wherein a width of the slit is about 0.8 times to about 2 times the width of the short lateral surface of the semiconductor chip.
20. The semiconductor package of claim 13 , wherein
a plurality of slits are provided in the thermal radiation film,
the plurality of slits extend in a first direction from an end of the thermal radiation film toward the short lateral surface of the semiconductor chip, and
the plurality of slits are spaced apart from each other in a second direction that intersects the first direction.