Granted Patent B2

US 12,552,718 · App. 17/738,415 · Granted Feb 17, 2026

Inventors: Yongjie Yan (Jiangsu, CN); Ruikang Zhao (Jiangsu, CN)

Assignee: Nantong Sanzer Precision Ceramics Co., Ltd.

C04B35/565C04B35/6264C04B35/6266C04B35/62695C04B35/638C04B35/64C04B2235/3826C04B2235/424C04B2235/606C04B2235/6567

Abstract

Claims (35)

1 . A method for preparing a solid-phase-sintered silicon carbide article, comprising the following steps:

Step S1, mixing a micron-scale silicon carbide powder with a particle size of 3-10 μm with a boron-containing sintering aid and wet grinding to obtain a slurry with a particle size of 0.4-0.8 μm;

Step S2, adding a water-soluble carbon black and a binder to the slurry, stirring evenly, and spray granulating to obtain a granulated powder of silicon carbide;

Step S3, mixing the granulated powder of silicon carbide with a plasticizer evenly, adding a lubricant and water, and stirring evenly to obtain a wet powder;

Step S4, ageing the wet powder to obtain an aged material; and

Step S5, subjecting the aged material to pugging, extruding, drying and heating;

wherein the plasticizer comprises a high molecular weight plasticizer with a molecular weight of 150,000-200,000 and a low molecular weight plasticizer with a molecular weight of 4000-6000.

2 . The method for preparing a solid-phase-sintered silicon carbide article according to claim 1 , wherein an amount of the boron-containing sintering aid is 0.2-0.5 wt % based on a weight of the micron-scale silicon carbide powder; and an amount of the water-soluble carbon black is 0.5-3.0 wt % based on the weight of the micron-scale silicon carbide powder.

3 . The method for preparing a solid-phase-sintered silicon carbide article according to claim 1 , wherein a temperature for the ageing is 5-10° C., a humidity for the ageing is 40-50%, and a time for the ageing is 12-24 h.

4 . The method for preparing a solid-phase-sintered silicon carbide article according to claim 1 , wherein the drying comprises a primary drying, the primary drying is far-infrared drying, a temperature for the primary drying is 80-100° C., and a material conveying speed is 0.5-1 m/min.

5 . The method for preparing a solid-phase-sintered silicon carbide article according to claim 4 , wherein the drying comprises a secondary drying, the secondary drying is hot air drying, a temperature for the secondary drying is 120-150° C., and a time for the secondary drying is 15-20 h.

6 . The method for preparing a solid-phase-sintered silicon carbide article according to claim 1 , wherein the heating comprises debonding, carbothermal reduction and sintering at 1950-2150° C.; and

a temperature for the carbothermal reduction is 1400-1600° C., and a holding time of the carbothermal reduction is 0.5-2 h.

7 . The method for preparing a solid-phase-sintered silicon carbide article according to claim 1 , wherein the heating comprises the following steps:

performing debonding by heating the aged material to 600-900° C. and holding for 1-3 h;

performing carbothermal reduction by heating the aged material after the debonding to 1400-1450° C., then to 1550-1600° C. at a rate of 0.5-2° C./min, and holding for 0.5-2 h at a temperature of 1550-1600° C.; and

performing sintering at high temperature by heating the aged material after the carbothermal reduction to 1950-2150° C., and holding for 2-3 h.

8 . The method for preparing a solid-phase-sintered silicon carbide article according to claim 1 , wherein the spray granulating is centrifugal spray granulation, an inlet temperature is 220-230° C., and an outlet temperature is 95-100° C.

9 . A method for preparing a solid-phase-sintered silicon carbide article, comprising the following steps:

Step S1, mixing a micron-scale silicon carbide powder with a particle size of 3-10 μm with a boron-containing sintering aid and wet grinding to obtain a slurry with a particle size of 0.4-0.8 μm;

Step S2, adding a water-soluble carbon black and a binder to the slurry, stirring evenly, and spray granulating to obtain a granulated powder of silicon carbide;

Step S3, mixing the granulated powder of silicon carbide with a plasticizer evenly, adding a lubricant and water, and stirring evenly to obtain a wet powder;

Step S4, ageing the wet powder to obtain an aged material; and

Step S5, subjecting the aged material to pugging, extruding, drying and heating;

wherein the drying comprises a primary drying and a secondary drying, the primary drying is far-infrared drying, a temperature for the primary drying is 80-100° C., a material conveying speed is 0.5-1 m/min, the secondary drying is hot air drying, a temperature for the secondary drying is 120-150° C., and a time for the secondary drying is 15-20 h.

10 . A method for preparing a solid-phase-sintered silicon carbide article, comprising the following steps:

Step S1, mixing a micron-scale silicon carbide powder with a particle size of 3-10 μm with a boron-containing sintering aid and wet grinding to obtain a slurry with a particle size of 0.4-0.8 μm;

Step S2, adding a water-soluble carbon black and a binder to the slurry, stirring evenly, and spray granulating to obtain a granulated powder of silicon carbide;

Step S3, mixing the granulated powder of silicon carbide with a plasticizer evenly, adding a lubricant and water, and stirring evenly to obtain a wet powder;

Step S4, ageing the wet powder to obtain an aged material; and

Step S5, subjecting the aged material to pugging, extruding, drying and heating;

wherein the heating comprises the following steps:

performing debonding by heating the aged material to 600-900° C. and holding for 1-3 h;

performing carbothermal reduction by heating the aged material after the debonding to 1400-1450° C., then to 1550-1600° C. at a rate of 0.5-2° C./min, and holding for 0.5-2 h at a temperature of 1550-1600° C.; and

performing sintering at high temperature by heating the aged material after the carbothermal reduction to 1950-2150° C., and holding for 2-3 h.

Assignments (1)

Priority Claims (1)

Continuity (2)

References Cited (18)