Granted Patent B2

US 12,419,155 · App. 17/739,260 · Granted Sep 16, 2025

Inventors: Takeyoshi Watabe (Kanagawa, JP); Hiromi Seo (Kanagawa, JP); Airi Ueda (Kanagawa, JP); Yuta Kawano (Kanagawa, JP); Tomohiro Kubota (Kanagawa, JP); Yasushi Kitano (Kanagawa, JP); Takao Tosu (Kanagawa, JP); Nobuharu Ohsawa (Kanagawa, JP); Satoshi Seo (Kanagawa, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

H10K50/15C07C211/45H10K30/353H10K50/18H10K50/181H10K39/30H10K2101/00

Abstract

Claims (59)

1. A hole transport layer material for a light-emitting device,

wherein a GSP_slope that is a potential gradient of a surface potential of an evaporated film of the hole transport layer material is higher than or equal to 20 mV/nm.

2. The hole transport layer material for a light-emitting device, according to claim 1 ,

wherein the GSP_slope is lower than or equal to 100 mV/nm.

3. The hole transport layer material for a light-emitting device, according to claim 1 ,

wherein an ordinary ray refractive index of the hole transport layer material with respect to light with a wavelength of 450 nm is higher than or equal to 1.50 and lower than or equal to 1.75.

4. The hole transport layer material for a light-emitting device, according to claim 1 ,

wherein an ordinary ray refractive index of the hole transport layer material with respect to light with a wavelength of 633 nm is higher than or equal to 1.45 and lower than or equal to 1.70.

5. The hole transport layer material for a light-emitting device, according to claim 1 ,

wherein a glass transition temperature (Tg) of the hole transport layer material is higher than or equal to 100° C.

6. The hole transport layer material for a light-emitting device, according to claim 1 , wherein the hole transport layer material comprises at least three substituents selected from a chain alkyl group having 2 to 5 carbon atoms and a cycloalkyl group having 6 to 12 carbon atoms.

7. The hole transport layer material for a light-emitting device, according to claim 6 ,

wherein the chain alkyl group is a chain alkyl group having a branch formed of 3 to 5 carbon atoms.

8. The hole transport layer material for a light-emitting device, according to claim 6 ,

wherein the chain alkyl group is a t-butyl group.

9. The hole transport layer material for a light-emitting device, according to claim 1 ,

wherein a percentage of carbon atoms forming bonds by sp 3 hybrid orbitals in a total number of carbon atoms in a molecule is higher than or equal to 23% and lower than or equal to 55%.

10. The hole transport layer material for a light-emitting device, according to claim 1 ,

wherein an integral value of signals lower than 4 ppm exceeds an integral value of signals at 4 ppm or higher in a 1H-NMR measurement of the hole transport layer material.

11. The hole transport layer material for a light-emitting device, according to claim 1 ,

wherein the hole transport layer material has a hole-transport property.

12. The hole transport layer material for a light-emitting device, according to claim 11 ,

wherein the hole transport layer material is arylamine.

13. The hole transport layer material for a light-emitting device, according to claim 11 ,

wherein, when the hole transport layer material comprises a condensed aromatic hydrocarbon ring, the condensed aromatic hydrocarbon ring is a bicyclic condensed aromatic ring or a tricyclic condensed aromatic ring and a total number of condensed aromatic hydrocarbon rings in a molecule of the hole transport layer material is one or two.

14. The hole transport layer material for a light-emitting device, according to claim 11 ,

wherein the hole transport layer material comprises two or less fluorene skeletons in a molecule.

15. An electron blocking layer material comprising the hole transport layer material according to claim 11 .

16. A light-emitting device comprising:

an anode;

a cathode; and

an EL layer between the anode and the cathode,

wherein the EL layer comprises a hole-transport layer and a light-emitting layer,

wherein the hole-transport layer is positioned between the anode and the light-emitting layer,

wherein the hole-transport layer is not in contact with the anode,

wherein the hole-transport layer comprises a hole transport layer material, and

wherein a GSP_slope that is a potential gradient of a surface potential of an evaporated film of the hole transport layer material is higher than or equal to 20 mV/nm.

17. The light-emitting device according to claim 16 ,

wherein the hole-transport layer is in contact with the light-emitting layer.

18. An electronic device comprising:

the light-emitting device according to claim 16 ; and

at least one of a sensor, an operation button, a speaker, and a microphone.

19. A light-emitting apparatus comprising:

the light-emitting device according to claim 16 ; and

at least one of a transistor and a substrate.

20. A lighting device comprising:

the light-emitting device according to claim 16 ; and

a housing.

21. A light-emitting device comprising:

an anode;

a cathode; and

an EL layer between the anode and the cathode,

wherein the EL layer comprises a hole-injection layer, a hole-transport layer, an electron-blocking layer, and a light-emitting layer,

wherein the hole-injection layer, the hole-transport layer, and the electron-blocking layer are positioned between the anode and the light-emitting layer,

wherein the electron-blocking layer is in contact with the light-emitting layer,

wherein the hole-injection layer is in contact with the anode,

wherein the hole-transport layer comprises a hole transport layer material,

wherein the electron-blocking layer comprises an electron blocking layer material, and

wherein a GSP_slope of an evaporated film of the hole transport layer material is lower than a GSP slope of an evaporated film of the electron blocking layer material.

Assignments (1)

Priority Claims (1)

Continuity (1)

References Cited (23)