Solid-state imaging element having partition wall disposed between optical filters
Provided is a solid-state imaging element including a support 1 having a photoelectric conversion unit 10 and an optical filter 20 provided on a light incident side with respect to the photoelectric conversion unit 10 . The optical filter 20 has two or more kinds of pixels 21, 22 , and 23 arranged in a patterned manner and a partition wall 25 disposed between the pixels. A refractive index of the partition wall with respect to light having a wavelength of 533 nm is 1.10 to 1.30, a width W 1 of the partition wall is 80 to 150 nm, a refractive index of the pixels with respect to light having a wavelength of 1000 nm is 1.60 to 1.90, a difference between a thickness H 1 of the partition wall and a thickness H 2 of pixels adjacent to the partition wall is 200 nm or less, and a difference between the refractive index of the partition wall with respect to light having a wavelength of 533 nm and a refractive index of the pixels adjacent to the partition wall with respect to light having a wavelength of 1000 nm is 0.30 to 0.80.
1. A solid-state imaging element comprising:
a support having a photoelectric conversion unit; and
an optical filter provided on a light incident side with respect to the photoelectric conversion unit,
wherein the optical filter has two or more kinds of pixels arranged in a patterned manner and a partition wall disposed between the pixels,
a refractive index of the partition wall with respect to light having a wavelength of 533 nm is 1.10 to 1.30,
a width of the partition wall is 80 to 150 nm,
a refractive index of the pixels with respect to light having a wavelength of 1000 nm is 1.60 to 1.90,
a difference between a thickness of the partition wall and a thickness of pixels adjacent to the partition wall is 200 nm or less,
a difference between the refractive index of the partition wall with respect to light having a wavelength of 533 nm and a refractive index of the pixels adjacent to the partition wall with respect to light having a wavelength of 1000 nm is 0.30 to 0.80, and
the thickness of the partition wall is larger than a thickness of the pixels.
2. The solid-state imaging element according to claim 1 ,
wherein the thickness of the partition wall is 300 to 650 nm.
3. The solid-state imaging element according to claim 1 ,
wherein a thickness of the pixels is 300 to 600 nm.
4. The solid-state imaging element according to claim 1 ,
wherein a width of the pixels is 300 to 1100 nm.
5. The solid-state imaging element according to claim 1 ,
wherein a pixel pitch of the optical filter is 400 to 1200 nm.
6. The solid-state imaging element according to claim 1 ,
wherein the difference between the thickness of the partition wall and the thickness of pixels adjacent to the partition wall is 1 nm or more.
7. The solid-state imaging element according to claim 1 ,
wherein a void ratio of the partition wall is 20% to 80%.
8. The solid-state imaging element according to claim 1 , further comprising:
an underlayer between the partition wall and a pixel side.
9. The solid-state imaging element according to claim 1 ,
wherein the optical filter includes at least one kind of pixel selected from a yellow pixel, a cyan pixel, or a magenta pixel.
10. A solid-state imaging element comprising:
a support having a photoelectric conversion unit; and
an optical filter provided on a light incident side with respect to the photoelectric conversion unit,
wherein the optical filter has two or more kinds of pixels arranged in a patterned manner and a partition wall disposed between the pixels,
a refractive index of the partition wall with respect to light having a wavelength of 533 nm is 1.10 to 1.30,
a width of the partition wall is 80 to 150 nm,
a refractive index of the pixels with respect to light having a wavelength of 1000 nm is 1.60 to 1.90,
a difference between a thickness of the partition wall and a thickness of pixels adjacent to the partition wall is 200 nm or less,
a difference between the refractive index of the partition wall with respect to light having a wavelength of 533 nm and a refractive index of the pixels adjacent to the partition wall with respect to light having a wavelength of 1000 nm is 0.30 to 0.80, and
the partition wall includes at least one kind selected from silica particles having a shape in which a plurality of spherical silica particles are linked in a beaded shape or silica particles having a hollow structure.
11. A solid-state imaging element comprising:
a support having a photoelectric conversion unit; and
an optical filter provided on a light incident side with respect to the photoelectric conversion unit,
wherein the optical filter has two or more kinds of pixels arranged in a patterned manner and a partition wall disposed between the pixels,
a refractive index of the partition wall with respect to light having a wavelength of 533 nm is 1.10 to 1.30,
a width of the partition wall is 80 to 150 nm,
a refractive index of the pixels with respect to light having a wavelength of 1000 nm is 1.60 to 1.90,
a difference between a thickness of the partition wall and a thickness of pixels adjacent to the partition wall is 200 nm or less,
a difference between the refractive index of the partition wall with respect to light having a wavelength of 533 nm and a refractive index of the pixels adjacent to the partition wall with respect to light having a wavelength of 1000 nm is 0.30 to 0.80, and
a surface roughness Ra value of the pixels is 0.1 to 5.0 nm.