Imaging apparatus
An imaging apparatus, including imaging optical system having a lens group and an aperture stop, and a solid-state image sensor which includes a photoelectric conversion layer made of an organic material and a color filter layer with color filters of two or more colors and a separation wall. The photoelectric conversion layer has a thickness of 0.1 82 m to 1 μm, each of the color filters has a refractive index of 1.5 to 1.8, the separation wall has a width of 0.05 μm to 0.2 μm and a refractive index of 1.22 to 1.34, and the lens group and the solid-state image sensor are disposed such that the relationship between a pixel pitch D (μm) of the sensor and a maximum angle α (°) of a principal ray incident on the sensor is 45≧α≧25.D−20 where D≦2.6 μm.
1. An imaging apparatus, comprising:
an imaging optical system having a lens group and an aperture stop; and
a solid-state image sensor for taking an image formed on an imaging surface of the imaging optical system, wherein the solid-state image sensor is a sensor having a plurality of pixels on a substrate and includes a photoelectric conversion layer made of an organic material and a color filter layer disposed above the photoelectric conversion layer with color filters of two or more colors and a transparent separation wall separating each of the color filters of the respective colors, wherein:
the photoelectric conversion layer has a thickness of 0.1 μm to 1 μm;
each of the color filters of the respective colors has a refractive index of 1.5 to 1.8;
the separation wall has a width of 0.05 μm to 0.2 μm;
the separation wall has a refractive index of 1.22 to 1.34; and
the lens group and the solid-state image sensor are disposed such that the relationship between a pixel pitch D (μm) of the solid-state image sensor and a maximum angle α (°) of a principal ray incident on the solid-state image sensor is
45≧α≧25·D−20 when D≦2.6 μm.
2. The imaging apparatus of claim 1 , wherein the relationship between the pixel pitch D (μm) and the maximum angle α (°) of the principal ray is
45≧α≧25·D−15 when D≦2.4 μm.
3. The imaging apparatus of claim 1 , wherein the relationship between the pixel pitch D (μm) and the maximum angle α (°) of the principal ray is
45≧α≧25.D−5 when D≦2.0 μm.