Image sensing device
An image sensing device includes a pixel array including a plurality of pixels, each of pixels configured to generate a pixel signal corresponding to intensity of incident light, and a plurality of grid structures, each grid structure disposed to overlap with a boundary between adjacent pixels among the plurality of pixels and configured to include an air layer so as to optically isolate the adjacent pixels. Each of the grid structures includes regions that form a cross shape.
1. An image sensing device comprising:
a pixel array including a plurality of pixels, each pixel configured to generate a pixel signal corresponding to intensity of incident light; and
a plurality of grid structures, each grid structure disposed to overlap with a boundary between adjacent pixels among the plurality of pixels so as to optically isolate the adjacent pixels,
wherein each of the plurality of grid structures includes regions that form a cross shape,
wherein adjacent cross shapes of the plurality of grid structures are spaced apart from each other, and
wherein the plurality of grid structures is disposed outside of a substrate including photoelectric conversion regions of the plurality of pixels.
2. The image sensing device according to claim 1 , wherein the regions of a grid structure of the plurality of grid structures includes:
a horizontal extension region extending in a first direction; and
a vertical extension region extending in a second direction perpendicular to the first direction.
3. The image sensing device according to claim 2 , wherein a grid structure of the plurality of grid structures includes:
a central region in which the horizontal extension region and the vertical extension region are disposed to cross each other,
wherein the central region is disposed to overlap with a vertex point of a corresponding pixel.
4. The image sensing device according to claim 3 , wherein:
the horizontal extension region extends from the vertex point and has length less than a length of one side of the pixel; and
the vertical extension region extends from the vertex point and has a length less than the length of one side of the pixel.
5. The image sensing device according to claim 1 , wherein:
the pixel includes:
a pair of first vertex points that face each other in a first diagonal direction;
a pair of second vertex points that face each other in a second diagonal direction different from the first diagonal direction, and
the plurality of grid structures is disposed to overlap with the pair of first vertex points without overlapping the pair of second vertex points.
6. The image sensing device according to claim 5 , wherein:
a grid structure of the plurality of grid structures extends from a vertex point overlapping the grid structure and has a length greater than half a length of one side of the pixel.
7. The image sensing device according to claim 5 , wherein:
the plurality of pixels forms a color matrix in which color pixels corresponding to any one of red color, blue color, and green color are arranged in a (2×2) matrix array; and
the plurality of grid structures is disposed to overlap with a center of the color matrix and vertex points of the color matrix.
8. The image sensing device according to claim 5 , wherein:
the plurality of pixels forms a color matrix in which color pixels corresponding to any one of red color, blue color, and green color are arranged in a (2×2) matrix array; and
the plurality of grid structures is disposed to overlap with a midpoint of each side of the color matrix.
9. The image sensing device according to claim 5 , wherein:
the plurality of pixels forms a Bayer pattern matrix in which a red pixel, a blue pixel, and green pixels are arranged in a Bayer pattern; and
the plurality of grid structures is disposed to overlap with a center point of the Bayer pattern matrix and vertex points of the Bayer pattern matrix.
10. The image sensing device according to claim 5 , wherein:
the plurality of pixels forms a Bayer pattern matrix in which a red pixel, a blue pixel, and green pixels are arranged in a Bayer pattern; and
the plurality of grid structures is disposed to overlap with a midpoint of each side of the Bayer pattern matrix.
11. The image sensing device according to claim 1 , wherein:
the pixel includes first to fourth vertex points; and
the plurality of grid structures is disposed to overlap with each of the first to fourth vertex points.
12. The image sensing device according to claim 11 , wherein:
a grid structure of the plurality of grid structures extends from one of the first to fourth vertex points overlapping the grid structure and has a length less than half a length of one side of the pixel.
13. The image sensing device according to claim 1 , wherein:
the plurality of pixels includes phase detection autofocus (PDAF) pixels configured to perform phase-difference detection and arranged in a (2×2) matrix array to form a phase detection autofocus (PDAF) matrix;
the plurality of grid structures is disposed to overlap with vertex points of the PDAF matrix; and
a grid structure of the plurality of grid structures extends from one of the vertex points overlapping the grid structure and has a length greater than half a length of one side of the pixel.
14. The image sensing device according to claim 1 , wherein:
the plurality of pixels includes phase detection autofocus (PDAF) pixels configured to perform phase-difference detection and arranged in a (1×2) matrix array to form a phase detection autofocus (PDAF) matrix;
the plurality of grid structures is disposed to overlap with vertex points of the PDAF matrix; and
a grid structure of the plurality of grid structures extends in one direction from one of the vertex points overlapping the grid structure and has a length less than half a length of one side of the pixel.
15. The image sensing device according to claim 1 , wherein:
the plurality of pixels includes phase detection autofocus (PDAF) pixels configured to perform phase-difference detection and arranged in a (1×2) matrix array to form a phase detection autofocus (PDAF) matrix; and
the plurality of grid structures is configured to include a grid structure,
wherein
a grid structure of the plurality of grid structures includes a central region formed to overlap with a midpoint of an upper side or a lower side of the PDAF matrix without extending toward a center point of the PDAF matrix.
16. The image sensing device according to claim 1 , wherein:
the plurality of pixels includes:
a diagonal edge region diagonally spaced apart from the pixel array with respect to a center point of the pixel array;
a horizontal edge region horizontally spaced apart from the pixel array with respect to the center point of the pixel array; and
a vertical edge region vertically spaced apart from the pixel array with respect to the center point of the pixel array,
wherein
a grid structure included in the diagonal edge region has a length less than a length of a grid structure included in the horizontal edge region or the vertical edge region.
17. An image sensing device comprising:
a pixel configured to generate a pixel signal corresponding to intensity of incident light and include first to fourth vertex points; and
a plurality of grid structures, each grid structure disposed at any one of the first to fourth vertex points,
wherein each of the plurality of grid structures has a cross shape,
wherein adjacent cross shapes of the plurality of grid structures are spaced apart from each other, and
wherein the plurality of grid structures is disposed outside of a substrate including a photoelectric conversion region of the pixel.
18. The image sensing device of claim 17 , wherein the pixel includes an optical filter configured to selectively transmit incident light having a certain wavelength,
wherein each grid structure further includes a capping layer, and
wherein the capping layer has a refractive index lower than a refractive index of the optical filter.
19. The image sensing device of claim 17 , wherein a portion of each of the plurality of grid structures that extends in a horizontal direction or a vertical direction has a length less than a length of a side of the pixel.
20. The image sensing device according to claim 1 , wherein each of the plurality of grid structures is configured to include an air layer.
21. The image sensing device of claim 18 , wherein each of the plurality of grid structures includes an air layer filled with air.
22. An image sensing device comprising:
a pixel array including a plurality of pixels, each pixel configured to generate a pixel signal corresponding to intensity of incident light; and
a plurality of grid structures, each grid structure disposed to overlap with a boundary between adjacent pixels among the plurality of pixels so as to optically isolate the adjacent pixels,
wherein:
each of the plurality of grid structures includes regions that form a cross shape,
a pixel of the pixel array includes first to fourth vertex points,
the plurality of grid structures is disposed to overlap with each of the first to fourth vertex points, and
the plurality of grid structures includes a grid structure that extends from one of the first to fourth vertex points overlapping the grid structure and has a length less than half a length of one side of the pixel.
23. The image sensing device according to claim 22 , wherein each of the plurality of grid structures is configured to include an air layer.