Composite etch stop layers for sensor devices
A device and method for fabricating the same is disclosed. For example, the device includes a sensor having a front side and a back side, a metal interconnect layer formed on the front side of the sensor, an anti-reflective coating formed on the back side of the sensor, a composite etch stop mask layer formed on the anti-reflective coating wherein the composite etch stop mask layer includes a hydrogen rich layer and a compressive high density layer, and a light filter formed on the composite etch stop mask layer.
1. A device, comprising:
a sensor having a front side and a back side;
a metal interconnect layer formed on the front side of the sensor;
an anti-reflective coating formed on the back side of the sensor;
a composite etch stop mask layer formed on the anti-reflective coating, wherein the composite etch stop mask layer includes a hydrogen rich layer and a compressive high density layer; and
a light filter formed on the composite etch stop mask layer.
2. The device of claim 1 , wherein the compressive density layer has a compressive stress between −500 megapascals (MPa) to −1,000 MPa.
3. The device of claim 1 , wherein the compressive high density layer comprises silicon oxy-nitride.
4. The device of claim 1 , wherein the compressive high density layer comprises silicon carbide.
5. The device of claim 1 , wherein the compressive high density layer comprises undoped silicon glass.
6. The device of claim 1 , wherein the compressive high density layer comprises high-stress undoped silicate glass.
7. The device of claim 1 , wherein the compressive high density layer comprises a nitrogen free anti-reflection layer.
8. The device of claim 1 , wherein the hydrogen rich layer comprises a hydrogen rich silicon nitride layer.
9. The device of claim 8 , wherein the hydrogen rich silicon nitride layer comprises at least 12 percent atom present of silicon-hydrogen bonds.
10. The device of claim 1 , wherein the hydrogen rich layer is adjacent to the anti-reflective coating and the compressive high density layer is above the hydrogen rich layer and adjacent to the light filter.
11. A device, comprising:
a silicon substrate comprising a light sensor, wherein the silicon substrate comprises a front side and a back side;
a metal interconnect layer formed on the front side of the sensor;
an oxide layer formed on the back side of the silicon substrate;
a high-k dielectric layer formed on the oxide layer;
a dielectric layer formed on the high-k dielectric layer;
a hydrogen rich silicon nitride layer formed on the dielectric layer;
a compressive high density layer formed on the hydrogen rich silicon nitride layer; and
an oxide grid formed on the multi-layered etch stop layer.
12. The device of claim 11 , wherein the compressive high density layer comprises silicon nitride having a compressive stress of approximately −730 megapascals.
13. The device of claim 11 , wherein the compressive high density layer comprises at least one of: silicon dioxide, silicon oxy-nitride, silicon carbide, undoped silicon glass (USG), high-stress undoped silicate glass (HSUSG), or a nitrogen free anti-reflection layer (NFARL).
14. The device of claim 11 , wherein the hydrogen rich silicon nitride layer has a tensile stress of approximately 300 megapascals.
15. The device of claim 11 , wherein an amount of hydrogen in the hydrogen rich silicon nitride layer is greater than an amount of hydrogen in the compressive high density layer.
16. The device of claim 15 , wherein the hydrogen rich silicon nitride layer comprises between 12 atom percent to 30 atom percent Si—H bonds.
17. The device of claim 16 , wherein the hydrogen rich silicon nitride layer comprises approximately 21.0 atom percent Si—H bonds.
18. A device, comprising:
a substrate having a light sensor;
a multi-layer interconnect structure formed on a front side of the substrate;
an oxide grid formed on a back side of the substrate; and
a composite etch stop layer interposing the oxide grid and the back side of the substrate, the composite etch stop layer comprising a hydrogen rich silicon nitride layer and a compressive high density layer interposing the hydrogen rich silicon nitride layer and the oxide grid.
19. The device of claim 18 , wherein the compressive high density layer has a first portion directly below the oxide grid and a second portion offset from the oxide grid, and the first portion is thicker than the second portion.
20. The device of claim 18 , wherein the substrate has silicon-hydrogen dangling bonds in vicinity of the hydrogen rich silicon nitride layer.