Micro-electro-mechanical system (MEMS) vibration sensor and fabricating method thereof
A MEM vibration sensor includes a substrate including a first supporting-portion and a cavity and a sensing-device disposed on the substrate. The sensing-device includes a second supporting-portion correspondingly disposed over and connected with the first supporting-portion, a first sensing-unit disposed on the cavity, a first mass-block disposed on the cavity, a second sensing-unit disposed on the first sensing-unit and the first mass-block, a first metal pad disposed on the third supporting-portion and electrically coupled with the first sensing-unit, and a second metal pad disposed on the third supporting-portion and electrically coupled with the second sensing-unit.
1. A micro-electro-mechanical system (MEMS) vibration sensor, comprising:
a substrate, comprising a first supporting-portion and a cavity; and
a sensing-device disposed on the substrate, comprising:
a second supporting-portion, correspondingly disposed over and connected with the first supporting-portion via a first dielectric material;
a first sensing-unit, disposed on the cavity and connected to the second supporting-portion;
a first mass-block, disposed on the cavity;
a second sensing-unit, disposed on the first sensing-unit and the first mass-block, wherein the second sensing-unit connects to the first mass-block via a second dielectric material; and a gap is forming between the second sensing-unit and the first sensing-unit; wherein the second sensing-unit further comprises a third supporting-portion correspondingly disposed over and connected to the second supporting-portion via a third dielectric material;
a first metal pad, disposed on the third supporting-portion and electrically coupled with the first sensing-unit; and
a second metal pad, disposed on the third supporting-portion and electrically coupled with the second sensing-unit.
2. The MEMS vibration sensor according to claim 1 , wherein the second supporting-portion, the first sensing-unit and the first mass-block are included in a patterned first device material layer; and the third supporting-portion and the second sensing-unit are included in a patterned second device material layer.
3. The MEMS vibration sensor according to claim 2 , wherein the patterned first device material layer comprises metal and a semiconductor material.
4. The MEMS vibration sensor according to claim 2 , wherein the patterned second device material layer comprises metal and a semiconductor material.
5. The MEMS vibration sensor according to claim 1 , wherein the first sensing-unit further comprises a plurality of through holes.
6. The MEMS vibration sensor according to claim 1 , wherein an opening is formed between the first mass-block and the first sensing-unit and surrounds the first mass-block, so as to make the first mass-block and the first sensing-unit being independent of each other.
7. The MEMS vibration sensor according to claim 1 , wherein the third supporting-portion further comprises a first portion and a second portion electrically isolated from each other; the first metal pad is formed on the first portion; and the second metal pad is formed on the second portion.
8. The MEMS vibration sensor according to claim 1 , further comprising a second mass-block disposed in the cavity and connected to the first mass-block via a fourth dielectric material.
9. The MEMS vibration sensor according to claim 8 , wherein the second mass-block shifts within a limited range in the cavity in conjunction with actions of the second sensing-unit.
10. The MEMS vibration sensor according to claim 8 , wherein the second mass-block and the first supporting-portion are made of the same material; the fourth dielectric material and the first dielectric material are made of the same material.
11. The MEMS vibration sensor according to claim 1 , wherein the second dielectric material and the third dielectric material are made of the same material.
12. The MEMS vibration sensor according to claim 1 , further comprising a plurality of dimples/bumps disposed between the second sensing-unit and the first sensing-unit.
13. The MEMS vibration sensor according to claim 1 , wherein the plurality of dimples/bumps are connected to the second sensing-unit.
14. The MEMS vibration sensor according to claim 1 , further comprising a protection layer formed on a first surface of the second sensing-unit facing the first sensing-unit or on a second surface of the second sensing-unit away from the first sensing-unit, wherein the protection layer comprises a plurality of dimples/bumps disposed between the second sensing-unit and the first sensing-unit.