Small transversely-excited film bulk acoustic resonators with enhanced Q-factor
An acoustic resonator device includes a conductor pattern formed on a surface of a piezoelectric plate. The conductor pattern includes a first busbar, a second busbar, and n interleaved parallel fingers of an interdigital transducer (IDT), where n is a positive integer. The fingers extend alternately from the first and second busbars. A first finger and an n'th finger are at opposing ends of the IDT. The conductor pattern also includes a first reflector element proximate and parallel to the first finger and a second reflector element proximate and parallel to the n'th finger. A center-to-center distance pr between the first reflector element and the first finger and between the second reflector element and the n'th finger is greater than or equal to 1.2 times a pitch p of the IDT and less than or equal to 1.5 times the pitch p.
1. An acoustic resonator device comprising:
a piezoelectric plate; and
a conductor pattern on a surface of the piezoelectric plate, the conductor pattern comprising:
an interdigital transducer (IDT) comprising a first busbar, a second busbar, and n interleaved fingers, where n is a positive integer, wherein the interleaved fingers extend alternately from the first and second busbars, and the fingers include a first finger and an n'th finger at opposing ends of the IDT;
a first reflector element proximate to the first finger; and
a second reflector element proximate to the n'th finger;
wherein a center-to-center distance pr between the first reflector element and the first finger and between the second reflector element and the n'th finger is greater than a pitch p of the IDT, wherein p is a center-to-center spacing between at least two adjacent fingers of the IDT; and
wherein the first reflector element is connected to one of the first busbar and the second busbar, and the second reflector element is connected to one of the first busbar and the second busbar, and
wherein the piezoelectric plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a bulk shear acoustic mode in the piezoelectric plate where acoustic energy propagates along a direction substantially orthogonal to the surface of the piezoelectric plate and transverse to a direction of an electric field created by the IDT.
2. The device of claim 1 , wherein the conductor pattern further comprises:
a third reflector element proximate to the first reflector element, wherein the first reflector element is between the third reflector element and the first finger; and
a fourth reflector element proximate to the second reflector element, wherein the second reflector element is between the fourth reflector element and the n'th finger.
3. The device of claim 2 , wherein a width mr of the first, second, third, and fourth reflector elements is configured to increase a Q-factor of the device at a predetermined frequency.
4. The device of claim 3 , wherein:
the device is a shunt resonator in a ladder bandpass filter circuit having a passband, and
mr is configured to increase a Q-factor of the device at a lower edge of the passband.
5. The device of claim 3 , wherein:
the device is a series resonator in a ladder bandpass filter circuit having a passband, and
mr is configured to increase a Q-factor of the device at an upper edge of the passband.
6. The device of claim 2 , wherein a center-to-center distance between the first and third reflector elements and a center-to-center distance between the second and fourth reflector elements are equal to pr.
7. The device of claim 1 , wherein, when an RF signal is applied between the first and second busbars, the first reflector element is at substantially a same potential as the first finger and the second reflector element is at substantially a same potential as the n'th finger.
8. An acoustic resonator device comprising:
a piezoelectric plate; and
a conductor pattern on a surface of the piezoelectric plate, the conductor pattern comprising:
an interdigital transducer (IDT) comprising a first busbar, a second busbar, and n interleaved fingers, where n is a positive integer, wherein the interleaved fingers extend alternately from the first and second busbars, and the interleaved fingers include a first finger and an n'th finger at opposing ends of the IDT;
a first reflector element proximate and parallel to the first finger; and
a second reflector element proximate and parallel to the n'th finger;
wherein a center-to-center distance pr between the first reflector element and the first finger and between the second reflector element and the n'th finger is greater than a pitch p of the IDT;
wherein the first reflector element and the first finger are connected to a same one of the first and second busbar, and the second reflector element and the n'th finger are connected to a same one of the first and second busbar, and
wherein the first reflector element is connected to only one of the first and second busbars and does not intersect a line extending in a direction which the other of the first and second busbars extends.
9. The device of claim 8 , wherein a width mr of the first and second reflector elements is configured to increase a Q-factor of the device at a predetermined frequency.
10. The device of claim 9 , wherein:
the device is a shunt resonator in a ladder bandpass filter circuit having a passband, and
mr is configured to increase a Q-factor of the device at a lower edge of the passband.
11. The device of claim 9 , wherein:
the device is a series resonator in a ladder bandpass filter circuit having a passband, and
mr is configured to increase a Q-factor of the device at an upper edge of the passband.
12. The device of claim 8 , wherein the conductor pattern further comprises:
a third reflector element proximate and parallel to the first reflector element, wherein the first reflector element is between the third reflector element and the first finger; and
a fourth reflector element proximate and parallel to the second reflector element, wherein the second reflector element is between the fourth reflector element and the n'th finger.
13. The device of claim 12 , wherein:
the first and third reflector elements and the first finger are connected to a same one of the first and second busbar, and
the second and fourth reflector elements and the n'th finger are connected to a same one of the first and second busbar.
14. The device of claim 8 , wherein, when an RF signal is applied between the first and second busbars, the first reflector element is at substantially a same potential as the first finger and the second reflector element is at substantially a same potential as the n'th finger.
15. An acoustic resonator device comprising:
a substrate;
a piezoelectric plate, a portion of the piezoelectric plate forming a diaphragm that is over a cavity in the substrate; and
a conductor pattern on a surface of the piezoelectric plate, the conductor pattern comprising:
an interdigital transducer (IDT) including a first busbar, a second busbar, and n interleaved fingers, where n is a positive integer, wherein the interleaved fingers extend alternately from the first and second busbars, and the interleaved fingers include a first finger and an n'th finger at opposing ends of the IDT;
a first reflector element proximate to the first finger; and
a second reflector element proximate to the n'th finger,
wherein the n interleaved fingers, the first reflector element, and the second reflector element are on the diaphragm,
wherein the first reflector element is connected to one of the first busbar and the second busbar, and the second reflector element is connected to one of the first busbar and the second busbar, and
wherein the first reflector element is connected to only one of the first and second busbars and does not intersect a line extending in a direction which the other of the first and second busbars extends.
16. The device of claim 15 , wherein a width mr of the first and second reflector elements is configured to increase a Q-factor of the device at a predetermined frequency.
17. The device of claim 15 , wherein the conductor pattern further comprises:
a third reflector element proximate to the first reflector element, wherein the first reflector element is centered between the third reflector element and the first finger; and
a fourth reflector element proximate to the second reflector element, wherein the second reflector element is centered between the fourth reflector element and the n'th finger,
wherein the third and fourth reflector elements are on the diaphragm.
18. The device of claim 15 , wherein, when an RF signal is applied between the first and second busbars, the first reflector element is at substantially a same potential as the first finger and the second reflector element is at substantially a same potential as the n'th finger.
19. The device of claim 15 , wherein a center-to-center distance pr between the first reflector element and the first finger and between the second reflector element and the n'th finger is greater than or equal to 1.2 times a pitch p of the IDT, wherein p is a center-to-center spacing between at least two adjacent fingers of the IDT.