Controller for a matching unit of a plasma processing system
A matching unit controller working in combination with a matching unit for a plasma processing machine is described. In one example, the controller has a master controller application and acts as a local master in the matching unit. In one example, the controller gathers data from the input and output sensors and feeds the data to an intelligent algorithm. In one example, the output from the algorithm is used to set the matching unit capacitor positions. In one example, the controller also has a slave controller application to communicate with a master controller of the plasma processing machine.
1. A controller for a matching unit of a plasma processing system, the controller configured to:
receive impedance data as viewed from an RF generator side of the system from the matching unit;
receive impedance data with respect to a chamber of the system from the matching unit;
process the impedance data using an algorithm to determine a target impedance of the matching unit to match the impedance of the chamber to the impedance of the RF generator;
adjust the capacitances of variable capacitors of the matching unit to achieve the target impedance by causing a change in a motor position associated with a variable capacitor;
wherein the controller is further configured to simultaneously;
act as a master controller for the matching unit when communicating with the matching unit, and
act as an slave controller for the matching unit when communicating with a master controller of the plasma processing system.
2. The controller of claim 1 wherein the controller is further configured to communicate with the matching unit and the master controller of the plasma processing system across a network based on at least one network protocol.
3. The controller of claim 2 wherein the controller is further configured to receive an algorithm via the network while performing any of the receiving and processing the impedance data and adjusting the capacitances, and store the received algorithm for later use.
4. The controller of claim 3 wherein the receiving and processing of the impedance data and adjusting the capacitances are performed for each step of a multiple step plasma process and the controller is configured to receive an algorithm during each step of the plasma process and use the received algorithm for a subsequent step of the plasma process.
5. The controller of claim 3 wherein the controller is further configured to receive an algorithm, while acting as the slave controller of the matching unit, from a master controller of the plasma processing system, and while simultaneously acting as the master controller for the matching unit.
6. The controller of claim 1 wherein the controller is further configured to store a high resolution map of an impedance matching range, wherein the map is used to find the target impedance based on the impedance data from the output sensor.
7. The controller of claim 6 wherein the controller is further configured to process the impedance data with respect to the chamber of the system, use the algorithm to find a conjugate impedance on the high resolution map and adjust the capacitances of the variable capacitors to achieve the conjugate impedance.
8. The controller of claim 7 wherein the controller is further configured to apply a fine tuning step after the capacitors have been adjusted to achieve the conjugate impedance, the fine tuning step further adjusting the capacitances of the capacitors to maximise power delivery.
9. The controller of claim 1 wherein the impedance data with respect to an RF generator of the system is received from an input sensor of the matching unit.
10. The controller of claim 9 wherein the input sensor monitors the magnitude of the RF voltage and current, their harmonics and the phase shift between them.
11. The controller of claim 1 wherein the impedance data with respect to a chamber of the system is received from an output sensor of the matching unit.
12. The controller of claim 11 wherein the output sensor monitors the magnitude of the RF voltage and current, their harmonics and the phase shift between them.
13. The controller of claim 1 wherein the controller is further configured to interface with a computer via a communication port distinct from an interface used to communicate with the plasma processing system.
14. The controller of claim 13 wherein the controller is further configured to receive an algorithm via the interface, store the received algorithm and use the algorithm to determine the target impedance.
15. A matching unit comprising the controller of claim 1 .