Semiconductor device, electric circuit, and wireless communication apparatus
A semiconductor device includes a channel layer, a barrier layer, and at least one contact layer. The channel layer includes a GaN-based material. The barrier layer includes an AlInN-based material in which a composition ratio of In is higher than 18%, and is provided on the channel layer. The at least one contact layer includes a conductive-type semiconductor material and is provided to penetrate the barrier layer and reach the channel layer.
1. A semiconductor device, comprising:
a channel layer including a GaN-based material;
a barrier layer including an AlInN-based material in which a composition ratio of In is higher than 18%, wherein the barrier layer is on the channel layer; and
at least one contact layer including a conductive-type semiconductor material, wherein
the at least one contact layer is positioned through the barrier layer and in contact with the channel layer,
the at least one contact layer is in a region at a depth within 100 nm from a first surface of the barrier layer that is on an opposite side to a second surface of the barrier layer, and
the second surface of the barrier layer is in contact with the channel layer.
2. The semiconductor device according to claim 1 , wherein
the at least one contact layer includes a first contact layer and a second contact layer,
each of the first contact layer and the second contact layer is on a respective side of a gate electrode such that the gate electrode is between the first contact layer and the second contact layer,
the gate electrode is on the barrier layer, and
a dielectric film is between the gate electrode and the barrier layer.
3. The semiconductor device according to claim 2 , wherein the first contact layer is electrically coupled to a source electrode, and the second contact layer is electrically coupled to a drain electrode.
4. The semiconductor device according to claim 3 , wherein sheet resistance between the gate electrode and the source electrode, or between the gate electrode and the drain electrode, is one of 280 Ω/square or less.
5. The semiconductor device according to claim 3 , wherein a sheet carrier concentration between the gate electrode and the source electrode, or between the gate electrode and the drain electrode, is one of 1.3×10 13 cm 2 or higher.
6. The semiconductor device according to claim 1 , wherein contact resistance between the contact layer and a channel provided at an interface between the channel layer and the barrier layer is one of 0.1 Ω·mm or less.
7. The semiconductor device according to claim 1 , wherein the contact layer includes an n-type GaN-based material as the conductive-type semiconductor material.
8. The semiconductor device according to claim 7 , wherein the n-type GaN-based material includes one of 2×10 20 cm −3 or more of an n-type impurity.
9. The semiconductor device according to claim 1 , wherein a carrier concentration of the contact layer is one of 8×10 19 cm −3 or higher.
10. The semiconductor device according to claim 1 , wherein the composition ratio of In in the barrier layer is one of 20% or lower.
11. The semiconductor device according to claim 1 , wherein the contact layer is in contact with an interface between the channel layer and the barrier layer.
12. A semiconductor device, comprising:
a channel layer including a GaN-based material;
a spacer layer including an AlN-based material, wherein the spacer layer is on the channel layer;
a barrier layer including an AlInN-based material in which a composition ratio of In is higher than 18%, wherein the barrier layer is on the spacer layer; and
at least one contact layer including a conductive-type semiconductor material, wherein
the at least one contact layer is positioned through the barrier layer and the spacer layer, and in contact with the channel layer,
the at least one contact layer is in a region at a depth within 100 nm from a first surface of the barrier layer that is on an opposite side to a second surface of the barrier layer, and
the second surface of the barrier layer is in contact with the spacer layer.
13. The semiconductor device according to claim 12 , wherein the contact layer is in contact with an interface between the channel layer and the spacer layer.
14. An electric circuit, comprising:
a semiconductor device that includes:
a channel layer including a GaN-based material;
a barrier layer including an AlInN-based material in which a composition ratio of In is higher than 18%, wherein the barrier layer is on the channel layer; and
at least one contact layer including a conductive-type semiconductor material, wherein
the at least one contact layer is positioned through the barrier layer and in contact with the channel layer,
the at least one contact layer is in a region at a depth within 100 nm from a first surface of the barrier layer that is on an opposite side to a second surface of the barrier layer, and
the second surface of the barrier layer is in contact with the channel laver.
15. A wireless communication apparatus, comprising:
a semiconductor device including
a channel layer including a GaN-based material;
a barrier layer including an AlInN-based material in which a composition ratio of In is higher than 18%, wherein the barrier layer is on the channel layer; and
at least one contact layer including a conductive-type semiconductor material, wherein
the at least one contact layer is positioned through the barrier layer and in contact with the channel layer,
the at least one contact layer is in a region at a depth within 100 nm from a first surface of the barrier layer that is on an opposite side to a second surface of the barrier laver, and
the second surface of the barrier layer is in contact with the channel layer.