Method and system for removing L-FC in plasma etching process
View Patent ↗Proposed are a method and a system for removing L-FC in a plasma etching process, in which L-FC, which is condensed on a wafer, an electrode, a substrate, a head, or the like, is removed by using infrared or ultraviolet rays in a plasma etching process using an L-FC precursor.
1 . A method for removing L-FC in a plasma etching process, comprising:
forming a window port on one side of a chamber;
installing a light source that irradiates infrared or ultraviolet rays outside the chamber;
injecting L-FC gas into the chamber;
applying power to an electrode installed in the chamber to perform a plasma reaction of the L-FC gas to etch a wafer;
while the L-FC gas is being injected and the power is being applied to the electrode to perform the plasma reaction to etch the wafer, irradiating an inside of the chamber with the infrared or ultraviolet rays generated from the light source through the window port in order to irradiate the inside of the chamber, such that the L-FC gas is not condensed and continuously remains in a gaseous state; and
removing the L-FC gas from the inside of the chamber,
wherein a substrate is formed at a bottom of the inside of the chamber and the electrode is formed at a top of the inside of the chamber, the electrode facing the substrate,
wherein the irradiating of the inside of the chamber includes irradiating the electrode, the substrate, and the wafer at a same time by a single light irradiation.
2 . The method for removing L-FC in a plasma etching process according to claim 1 ,
wherein the infrared rays have a wavelength of 780 nm or more.
3 . The method for removing L-FC in a plasma etching process according to claim 1 ,
wherein the ultraviolet rays have a wavelength of 10 to 380 nm.
4 . The method for removing L-FC in a plasma etching process according to claim 1 ,
wherein equipment including a head installed inside the chamber irradiated with the infrared or ultraviolet rays.