Organic optoelectronic devices based on a single-crystal PT complex
A photodetection device is configured to detect light and the photodetection device includes a substrate having a largest surface; a dielectric formed over the largest surface of the substrate; a first metallic electrode formed on the dielectric; a second metallic electrode formed on the dielectric, at a given distance from the first metallic electrode, to form a channel; and a single-crystal linear-chain polyfluorinated dibromo-platinum(II) diimine complex located in the channel.
1. A photodetection device configured to detect light, the photodetection device comprising:
a substrate having a largest surface;
a dielectric formed over the largest surface of the substrate;
a first metallic electrode formed on the dielectric;
a second metallic electrode formed on the dielectric, at a given distance from the first metallic electrode, to form a channel; and
a single-crystal linear-chain polyfluorinated dibromo-platinum(II) diimine complex located in the channel.
2. The photodetection device of claim 1 , wherein the single-crystal linear-chain polyfluorinated dibromo-platinum(II) diimine complex has a lamellar structure, and wherein the single-crystal linear-chain polyfluorinated dibromo-platinum(II) diimine complex is arranged in the channel so that the lamellar structure extends parallel to the largest surface of the substrate.
3. The photodetection device of claim 2 , wherein, a charge mobility of 0.45 cm 2 V −1 s −1 is obtained for a threshold voltage of 1.12 V.
4. The photodetection device of claim 2 , wherein, a photo-response of 1000 A W −1 is obtained for 5 V bias.
5. The photodetection device of claim 2 , an ON/OFF switching ratio of 16 is obtained for zero bias.
6. The photodetection device of claim 2 , wherein, a temporal response of the photocurrent is 80 μs, and a recovery time is 90 μs.
7. The photodetection device of claim 2 , wherein, a photocurrent varies as a sine wave with a polarization angle of an incoming polarized light.
8. The photodetection device of claim 1 , wherein platinum atoms in the lamellar structure are arranged to face each other to form a chain.
9. The photodetection device of claim 1 , wherein the single-crystal includes two monomers that form a dimer, and the two monomers are identical and each monomer includes two N atoms, one Pt atom, two Br atoms and six F atoms.
10. The photodetection device of claim 9 , wherein each monomer of the dimer extends in a corresponding plane, and the corresponding planes are parallel to each other.
11. The photodetection device of claim 1 , further comprising:
a gate electrode formed on the substrate, opposite to the first and second metallic electrodes.
12. The photodetection device of claim 1 , further comprising:
an encapsulation layer formed over the first and second metallic electrodes and the single-crystal linear-chain polyfluorinated dibromo-platinum(II) diimine complex.
13. The photodetection device of claim 12 , further comprising:
a gate electrode formed over the encapsulation layer.
14. A phototransistor comprising:
a substrate having a largest surface;
a dielectric layer formed over the largest surface of the substrate;
a first metallic electrode formed on the dielectric;
a second metallic electrode formed on the dielectric, at a given distance from the first metallic electrode, to form a channel;
a single-crystal linear-chain polyfluorinated dibromo-platinum(II) diimine complex located in the channel; and
a gate electrode formed to face the single-crystal linear-chain polyfluorinated dibromo-platinum(II) diimine complex through a dielectric material.
15. The phototransistor of claim 14 , wherein the single-crystal linear-chain polyfluorinated dibromo-platinum(II) diimine complex has a lamellar structure, and wherein the single-crystal linear-chain polyfluorinated dibromo-platinum (II) diimine complex is arranged in the channel so that the lamellar structure extends parallel to the largest surface of the substrate.
16. The phototransistor of claim 15 , wherein, a charge mobility of 0.45 cm 2 V −1 s −1 is obtained for a threshold voltage of 1.12 V, a photo-response of 1000 A W −1 is obtained for 5 V bias, an ON/OFF switching ratio of 16 is obtained for zero bias, and a temporal response of the photocurrent is 80 μm, and a recovery time is 90 μm.
17. The phototransistor of claim 14 , wherein the single-crystal includes two monomers that form a dimer, and the two monomers are identical and each monomer includes two N atoms, one Pt atom, two Br atoms and six F atoms.
18. The phototransistor of claim 14 , wherein the gate electrode is formed on the substrate, opposite the dielectric layer.
19. The phototransistor of claim 14 , further comprising:
an encapsulation layer formed to cover the first and second metallic electrodes and the single-crystal linear-chain polyfluorinated dibromo-platinum(II) diimine complex.
20. The phototransistor of claim 19 , wherein the gate electrode is formed directly on the encapsulation layer.