Group III nitride single crystal substrate and method for production thereof
A group III nitride single crystal substrate comprises: a first main face; and a first back face opposite to the first main face, wherein an absolute value of a radius of curvature of the first main face of the substrate is 10 m or more; an absolute value of a radius of curvature of a crystal lattice plane at a center of the first main face of the substrate is 10 m or more; and a 1/1000 intensity width of an X-ray rocking curve of a low-incidence-angle face at the center of the first main face of the substrate is 1200 arcsec or less.
1. A group III nitride single crystal substrate comprising:
a first main face; and
a first back face opposite to the first main face,
wherein an absolute value of a radius of curvature of the first main face of the substrate is no less than 10 m;
an absolute value of a radius of curvature of a crystal lattice plane at a center of the first main face of the substrate is no less than 10 m; and
a 1/1000 intensity width of an X-ray rocking curve of a low-angle incident plane at the center of the first main face of the substrate is no more than 1200 arcsec.
2. The group III nitride single crystal substrate according to claim 1 ,
wherein the absolute value of the radius of curvature of the first main face of the substrate is no less than 15 m.
3. The group III nitride single crystal substrate according to claim 1 ,
wherein the absolute value of the radius of curvature of the crystal lattice plane at the center of the first main face of the substrate is no less than 15 m.
4. The group III nitride single crystal substrate according to claim 1 ,
wherein the 1/1000 intensity width of the X-ray rocking curve of the low-angle incident plane at the center of the first main face of the substrate is no more than 1000 arcsec.
5. The group III nitride single crystal substrate according to claim 1 ,
wherein in a plan view from the first main face side of the group III nitride single crystal substrate, the absolute value of the radius of curvature of the crystal lattice plane is no less than 10 m in the entire first main face; and
the 1/1000 intensity width of the X-ray rocking curve of the low-angle incident plane in the entire first main face of the substrate is no more than 1200 arcsec.
6. The group III nitride single crystal substrate according to claim 1 ,
wherein the main face of the group III nitride single crystal substrate is a (001) plane, and the low-angle incident plane at the center of the main face of the substrate is a (103) plane.
7. The group III nitride single crystal substrate according to claim 1 , which is a group III nitride single crystal layered body comprising:
a group III nitride single crystal base substrate comprising a second main face and a second back face opposite to the second main face; and
a group III nitride single crystal layer arranged over the second main face of the group III nitride single crystal base substrate, wherein the group III nitride of the group III nitride single crystal layer is the same as the group III nitride of the base substrate.
8. The group III nitride single crystal substrate according to claim 1 , wherein the group III nitride single crystal substrate is an aluminum nitride single crystal substrate.
9. The group III nitride single crystal substrate according to claim 8 ,
wherein the first main face is an aluminum-polar face.
10. A method for producing a group III nitride single crystal substrate, the method comprising, in the sequence set forth:
(1) preparing a group III nitride single crystal, wherein the group III nitride single crystal comprises a first main face and a first back face opposite to the first main face;
(2) grinding a surface of the first main face and a surface of the first back face of the group III nitride single crystal obtained in the (1); and
(3) polishing the surface of the first main face and the surface of the first back face of the group III nitride single crystal obtained in the (2),
the (3) comprising, in the sequence set forth:
(3-1) carrying out the polishing such that a ratio w main /w back becomes 0.5 to 10, to obtain a group III nitride single crystal precursor substrate, wherein the w main is a 1/1000 intensity width of an X-ray rocking curve of a low-index diffraction plane parallel to the first main face at a center of the first main face of the group III nitride single crystal precursor substrate, and wherein the w back is a 1/1000 intensity width of an X-ray rocking curve of the low-index diffraction plane parallel to the first main face at a center of the first back face of the group III nitride single crystal precursor substrate; and
(3-2) carrying out the polishing such that a 1/1000 intensity width of an X-ray rocking curve of a low-angle incident plane at the center of the first main face of the group III nitride single crystal precursor substrate obtained in the (3-1) becomes no more than 1200 arcsec.
11. The method for producing the group III nitride single crystal substrate according to claim 10 ,
the (1) comprising:
depositing a group III nitride single crystal layer over a group III nitride single crystal base substrate by a vapor phase growth method, wherein the base substrate comprises a second main face and a second back face opposite to the second main face, and wherein the group III nitride single crystal layer is deposited over the second main face of the base substrate, and wherein the group III nitride of the group III nitride single crystal layer is the same as the group III nitride of the base substrate.