Composition for chemical-mechanical polishing and chemical-mechanical polishing method
Provided are a chemical-mechanical polishing composition and a chemical-mechanical polishing method capable of polishing a semiconductor substrate containing a conductive metal such as tungsten or cobalt flatly and at high speed as well as reducing surface defects after polishing. The composition for chemical-mechanical polishing contains (A) silica particles having a functional group represented by general formula (1) and (B) a silane compound. —COO-M+ . . . (1) (M+ represents a monovalent cation.)
1. A composition for chemical-mechanical polishing comprising
(A) silica particles having a functional group represented by general formula (1) below, and
(B) a silane compound,
—COO − M + (1)
wherein M + represents a monovalent cation,
a content of the component (B) is 0.0001% by mass or more and 0.02% by mass or less.
2. The composition for chemical-mechanical polishing according to claim 1 , further comprising an organic acid.
3. The composition for chemical-mechanical polishing according to claim 1 , further comprising an oxidizing agent.
4. The composition for chemical-mechanical polishing according to claim 1 , wherein a pH is 2 or more and 5 or less.
5. The composition for chemical-mechanical polishing according claim 1 , wherein the component (B) is at least one selected from compounds represented by the following general formulas (2), (3), and (4):
Si(OR 1 ) 4 (2)
SiR 2 m (OR 3 ) n (R 4 —NR 5 2 ) p (3)
SiR 2 m (OR 3 ) n R 5 p (4)
in Formula (2), each of a plurality of R 1 independently represents a monovalent hydrocarbon group; in Formula (3), R 4 represents a divalent hydrocarbon group; in Formulas (3) and (4), each of R 2 and R 3 independently represents a monovalent hydrocarbon group, R 5 represents hydrogen atoms or a monovalent organic group having 1 to 10 carbon atoms each independently containing or not containing heteroatoms, m is an integer of 0 to 2, n is an integer of 1 to 3, p is 1 or 2, and m+n+p=4.
6. The composition for chemical-mechanical polishing according to claim 5 , further comprising an organic acid.
7. The composition for chemical-mechanical polishing according to claim 1 , wherein the component (B) is at least one selected from tetramethoxysilane, tetraethoxysilane, tetrapropoxysilane, tetraphenoxysilane, 3-aminopropyltrimethoxysilane, N-(2-aminoethyl)-3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, aminopropyldimethylethoxysilane, aminopropylmethyldiethoxysilane, N-phenyl-3-aminopropyltrimethoxysilane, 3-trimethoxysilylpropyl succinic anhydride, 3-triethoxysilylpropyl succinic anhydride, 3-mercaptopropylmethyldimethoxysilane, and 3-mercaptopropyltrimethoxysilane.
8. The composition for chemical-mechanical polishing according to claim 7 , further comprising an organic acid.
9. The composition for chemical-mechanical polishing according to claim 1 , wherein the component (A) is silica particles in which the functional group represented by the general formula (1) is fixed on a surface thereof via a covalent bond.
10. The composition for chemical-mechanical polishing according claim 9 , wherein the component (B) is at least one selected from compounds represented by the following general formulas (2), (3), and (4):
Si(OR 1 ) 4 (2)
SiR 2 m (OR 3 ) n (R 4 —NR 5 2 ) p (3)
SiR 2 m (OR 3 ) n R 5 p (4)
in Formula (2), each of a plurality of R 1 independently represents a monovalent hydrocarbon group; in Formula (3), R 4 represents a divalent hydrocarbon group; in Formulas (3) and (4), each of R 2 and R 3 independently represents a monovalent hydrocarbon group, R 5 represents hydrogen atoms or a monovalent organic group having 1 to 10 carbon atoms each independently containing or not containing heteroatoms, m is an integer of 0 to 2, n is an integer of 1 to 3, p is 1 or 2, and m+n+p=4.
11. The composition for chemical-mechanical polishing according to claim 9 , wherein the component (B) is at least one selected from tetramethoxysilane, tetraethoxysilane, tetrapropoxysilane, tetraphenoxysilane, 3-aminopropyltrimethoxysilane, N-(2-aminoethyl)-3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, aminopropyldimethylethoxysilane, aminopropylmethyldiethoxysilane, N-phenyl-3-aminopropyltrimethoxysilane, 3-trimethoxysilylpropyl succinic anhydride, 3-triethoxysilylpropyl succinic anhydride, 3-mercaptopropylmethyldimethoxysilane, and 3-mercaptopropyltrimethoxysilane.
12. The composition for chemical-mechanical polishing according to claim 9 , further comprising an organic acid.
13. The composition for chemical-mechanical polishing according to claim 1 , wherein a total mass of the composition for chemical-mechanical polishing is 100% by mass,
a content of the component (A) is 0.1% by mass or more and 10% by mass or less.
14. The composition for chemical-mechanical polishing according to claim 13 , wherein the component (A) is silica particles in which the functional group represented by the general formula (1) is fixed on a surface thereof via a covalent bond.
15. The composition for chemical-mechanical polishing according claim 13 , wherein the component (B) is at least one selected from compounds represented by the following general formulas (2), (3), and (4):
Si(OR 1 ) 4 (2)
SiR 2 m (OR 3 ) n (R 4 —NR 5 2 ) p (3)
SiR 2 m (OR 3 ) n R 5 p (4)
in Formula (2), each of a plurality of R 1 independently represents a monovalent hydrocarbon group; in Formula (3), R 4 represents a divalent hydrocarbon group; in Formulas (3) and (4), each of R 2 and R 3 independently represents a monovalent hydrocarbon group, R 5 represents hydrogen atoms or a monovalent organic group having 1 to 10 carbon atoms each independently containing or not containing heteroatoms, m is an integer of 0 to 2, n is an integer of 1 to 3, p is 1 or 2, and m+n+p=4.
16. The composition for chemical-mechanical polishing according to claim 13 , wherein the component (B) is at least one selected from tetramethoxysilane, tetraethoxysilane, tetrapropoxysilane, tetraphenoxysilane, 3-aminopropyltrimethoxysilane, N-(2-aminoethyl)-3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, aminopropyldimethylethoxysilane, aminopropylmethyldiethoxysilane, N-phenyl-3-aminopropyltrimethoxysilane, 3-trimethoxysilylpropyl succinic anhydride, 3-triethoxysilylpropyl succinic anhydride, 3-mercaptopropylmethyldimethoxysilane, and 3-mercaptopropyltrimethoxysilane.
17. The composition for chemical-mechanical polishing according to claim 13 , further comprising an organic acid.
18. The composition for chemical-mechanical polishing according to claim 13 , further comprising an oxidizing agent.
19. A chemical-mechanical polishing method comprising:
a step of polishing a semiconductor substrate using the composition for chemical-mechanical polishing according to claim 1 .
20. The chemical-mechanical polishing method according to claim 19 , wherein the semiconductor substrate has a part comprising at least one selected from a group consisting of silicon oxide and tungsten.