Indium phosphide substrate

1. An indium phosphide substrate,

wherein when planes A each parallel to a main surface are taken in a wafer, the phosphide substrate has an angle θ on the main surface side of 0°<θ≤120° for all of the planes A where a distance from the main surface is 100 μm or more to 200 μm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an wafer edge with each of the planes A and being tangent to the wafer edge, and an plane of each of the planes A extending in a wafer outside direction;

wherein in a cross section orthogonal to the wafer edge, the indium phosphide substrate has edge rounds on the main surface side and a surface side opposite to the main surface;

wherein a chamfered width X f from the wafer edge on the main surface side is 50 μm or more to 130 μm or less;

wherein a chamfered width X b from the wafer edge on the surface side opposite to the main surface is 150 μm or more to 400 μm or less; and

wherein the indium phosphide substrate has a thickness of 330 μm or more to 700 μm or less.

2. The indium phosphide substrate according to claim 1 , wherein the angle θ is 60°≤θ≤120° for all of the planes A where the distance from the main surface is 100 μm or more to 200 μm or less.

3. An indium phosphide substrate,

wherein when planes A each parallel to a main surface are taken in a wafer, the phosphide substrate has an angle θ on the main surface side of 60°<θ≤110° for all of the planes A where a distance from the main surface is 100 μm or more to 200 μm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an wafer edge with each of the planes A and being tangent to the wafer edge, and an plane of each of the planes A extending in a wafer outside direction;

wherein in a cross section orthogonal to the wafer edge, the indium phosphide substrate has edge rounds on the main surface side and a surface side opposite to the main surface;

wherein a chamfered width X f from the wafer edge on the main surface side is 80 μm or more to 110 μm or less;

wherein a chamfered width X b from the wafer edge on the surface side opposite to the main surface is 150 μm or more to 210 μm or less; and

wherein the indium phosphide substrate has a diameter of 50.8 mm or less and a thickness of 330 μm or more to 380 μm or less.

4. An indium phosphide substrate,

wherein when planes A each parallel to a main surface are taken in a wafer, the phosphide substrate has an angle θ on the main surface side of 90°≤0≤120° for all of the planes A where a distance from the main surface is 100 μm or more to 200 μm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of a wafer edge with each of the planes A and being tangent to the wafer edge, and an plane of each of the planes A extending in a wafer outside direction,

wherein in a cross section orthogonal to the wafer edge, the indium phosphide substrate has edge rounds on the main surface side and a surface side opposite to the main surface;

wherein a chamfered width X f from the wafer edge on the main surface side is 80 μm or more to 110 μm or less;

wherein a chamfered width X b from the wafer edge on the surface side opposite to the main surface is 180 μm or more to 230 μm or less; and

wherein the indium phosphide substrate has a diameter of 50.8 mm or less and a thickness of 480 μm or more to 530 μm or less.

5. An indium phosphide substrate,

wherein when planes A each parallel to a main surface are taken in a wafer, the phosphide substrate has an angle θ on the main surface side of 90°≤θ≤120° for all of the planes A where a distance from the main surface is 100 μm or more to 200 μm or less, wherein the angle θ is formed by a plane B, the plane B including an intersection line of an wafer edge with each of the planes A and being tangent to the wafer edge, and an plane of each of the planes A extending in a wafer outside direction,

wherein in a cross section orthogonal to the wafer edge, the indium phosphide substrate has edge rounds on the main surface side and a surface side opposite to the main surface;

wherein a chamfered width X from the wafer edge on the main surface side is 90 μm or more to 130 μm or less;

wherein a chamfered width X b from the wafer edge on the surface side opposite to the main surface is 270 μm or more to 350 μm or less; and

wherein the indium phosphide substrate has a diameter of 76.2 mm or less and a thickness of 570 μm or more to 630 μm or less.

6. The indium phosphide substrate according to claim 1 , wherein a ratio of the chamfered width X b from the wafer edge on the surface side opposite to the main surface to the chamfered width X f from the wafer edge on the main surface side: X b /X f is 1.25 or more to 8.0 or less.

7. The indium phosphide substrate according to claim 6 , wherein the ratio X b /X f is 1.70 or more to 3.0 or less.