System and Method for Controlling Temperature of Semiconductor Single Crystal Growth

1 . A system for controlling temperature of semiconductor single crystal growth, comprising:

an image collection apparatus, configured to capture an image of an edge line of a crystal rod that grows at a solid-liquid interface, so as to determine a width of the edge line at the solid-liquid interface;

a heating apparatus, configured to heat a crucible; and

a temperature control apparatus, configured to control a heating power of the heating apparatus, wherein the temperature control apparatus controls the heating power of the heating apparatus according to the width of the edge line.

2 . The system according to claim 1 , wherein a growth direction of the crystal rod comprises a direction 100, a direction 110, or a direction 111.

3 . The system according to calm 1 , wherein the heating apparatus comprises a plurality of heaters respectively arranged at a side wall and a bottom of the crucible, wherein the heater at the side wall heats the crucible from the side wall, and the heater at the bottom heats the crucible from the bottom.

4 . The system according to claim 3 , wherein when the width of the edge line is less than a preset range, the temperature control apparatus is further configured to increase a heating power of the heater at the side wall and decrease a heating power of the heater at the bottom, so as to decrease an axial temperature gradient at the solid-liquid interface; and when the width of the edge line is greater than the preset range, the temperature control apparatus is further configured to decrease the heating power of the heater at the side wall and increase the heating power of the heater at the bottom, so as to increase the axial temperature gradient at the solid-liquid interface.

5 . The system according to claim 1 , wherein the temperature control apparatus is further configured to increase or decrease the heating power of the heater by a stepwise prior intermittent heating method.

6 . The system according to claim 5 , wherein with the stepwise prior intermittent heating method, the heating power is gradually increased in an alternating manner of increase-decrease-increase according to an Increase rate of the heating power, or is gradually decreased in an alternating manner of decrease-increase-decrease according to a decrease rate of the heating power.

7 . The system according to claim 1 , wherein the image collection apparatus is a dual-line scan camera or a single-sine scan camera at a viewing window.

8 . The system according to claim 1 , wherein determining the width of the edge line from the image comprises steps of interface edge curve extraction, curvature calculation, and comparison between a curvature change and a threshold.

9 . A method for controlling temperature of semiconductor single crystal growth, comprising:

capturing, by an image collection apparatus, an image of an edge line of a crystal rod that grows at a solid-liquid interface: and

determining a width of the edge line according to the captured image, wherein heating a crucible according to the width of the edge line.

10 . The method according to claim 9 , wherein when the width of the edge line is less than a preset range, a heating power at a side wall is increased and a heating power at a bottom is decreased, so as to decrease an axial temperature gradient at the solid-liquid interface; and when the width of the edge line is greater than the preset range, the heating power at the side wall is decreased and the heating power at the bottom is increased, so as to increase the axial temperature gradient at the solid-liquid interface.

11 . The method according to claim 10 , wherein the heating power is increased or decreased by a stepwise prior intermittent heating method.

12 . The method according to claim 11 , wherein with the stepwise prior intermittent heating method, the heating power is gradually increased in an alternating manner of increase-decrease-increase according to an increase rate of the heating power, or is gradually decreased in an alternating manner of decrease-increase-decrease according to a decrease rate of the heating power.

13 . The method according to claim 9 , wherein determining the width of the edge line from the image comprises interface edge curve extraction, curvature calculation, and comparison between a curvature change and a threshold.

14 . The method according to claim 9 , wherein a growth direction of the crystal rod comprises a direction 100, a direction 110, or a direction 111.

15 . The system according to claim 2 , wherein the temperature control apparatus is further configured to increase or decrease the heating power of the heater by a stepwise prior intermittent heating method.

16 . The system according to claim 3 , wherein the temperature control apparatus is further configured to increase or decrease the heating power of the heater by a stepwise prior intermittent heating method.

17 . The system according to claim 4 , wherein the temperature control apparatus is further configured to increase or decrease the heating power of the heater by a stepwise prior intermittent heating method.

18 . The system according to any one of claim 2 , wherein the image collection apparatus is a dual-line scan camera or a single-line scan camera at a viewing window.

19 . The system according to claim 3 , wherein the image collection apparatus is a dual-line scan camera or a single-line scan camera at a viewing window.

20 . The system according to claim 4 , wherein the image collection apparatus is a dual-line scan camera or a single-line scan camera at a viewing window.