IP Library Granted Patent US 12,196,789
Granted Patent B2
US 12,196,789 · App. 17/790,584 · Granted Jan 14, 2025

Current sensor, current measurement device, system and apparatus, and storage medium

Inventors: Peng Li (Guangzhou, CN); Qiancheng Lv (Guangzhou, CN); Bing Tian (Guangzhou, CN); Licheng Li (Guangzhou, CN); Bofeng Luo (Guangzhou, CN); Zhong Liu (Guangzhou, CN); Zhiming Wang (Guangzhou, CN); Hongdi Sun (Guangzhou, CN); Xu Yin (Guangzhou, CN); Jiaming Zhang (Guangzhou, CN)
Assignee: Digital Grid Research Institute, China S. Pwr Grid
G01R19/25G01R19/10
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Quick Facts
Patent No.
US 12,196,789
App. No.
17/790,584
Granted
Jan 14, 2025
Kind
B2
Abstract

A current sensor includes: four first uniaxial TMR chips and at least two second uniaxial TMR chips, each first uniaxial TMR chip and each second uniaxial TMR chip being located on the same virtual ring, wherein magnetic sensitive directions of the four first uniaxial TMR chips are perpendicular to a radius of the virtual ring, magnetic sensitive directions of two adjacent first uniaxial TMR chips are perpendicular to each other, magnetic sensitive directions of the two second uniaxial TMR chips are parallel to the radius of the virtual ring and opposite to each other, and the two second uniaxial TMR chips respectively have the same positions as two first uniaxial TMR chips; each first uniaxial TMR chip and each second uniaxial TMR chip are configured to collect a magnetic induction intensity, the magnetic induction intensity is configured to calculate a target current value of a to-be-measured wire.

Claims (32)

1. A current measurement method, applied to a current measurement device including a current sensor and a processor connected to the current sensor and that is configured to calculate a target current value of a to-be-measured wire according to a magnetic induction intensity and a radius of a virtual ring;

wherein the current sensor includes four first uniaxial Tunnel Magnetoresistance (TMR) chips and two second uniaxial TMR chips, each of the first uniaxial TMR chips and each of the second uniaxial TMR chips is located on the virtual ring, wherein magnetic sensitive directions of the four first uniaxial TMR chips are perpendicular to the radius of the virtual ring, magnetic sensitive directions of two adjacent first uniaxial TMR chips are perpendicular to each other, magnetic sensitive directions of the two second uniaxial TMR chips are parallel to the radius of the virtual ring and opposite to each other, and the two second uniaxial TMR chips respectively have same positions as two of the first uniaxial TMR chips;

wherein each of the first uniaxial TMR chips and each of the second uniaxial TMR chips is configured to collect a magnetic induction intensity, the magnetic induction intensity is configured to calculate a target current value of the to-be-measured wire, the magnetic induction intensity includes a magnetic induction intensity of the to-be-measured wire and an interference magnetic field intensity; the method comprising:

acquiring the magnetic induction intensities of the four first uniaxial TMR chips and the magnetic induction intensities of at least two second uniaxial TMR chips, wherein each of the magnetic induction intensities includes the magnetic induction intensity of the to-be-measured wire and the interference magnetic field intensity; and

determining the target current value of the to-be-measured wire according to the magnetic induction intensity of each first uniaxial TMR chip, the magnetic induction intensity of each second uniaxial TMR chip, and the radius of the virtual ring.

2. The method according to claim 1 , wherein the step of determining the target current value of the to-be-measured wire includes:

substituting the magnetic induction intensity of each first uniaxial TMR chip, the magnetic induction intensity of each second uniaxial TMR chip, and the radius of the virtual ring into a preset current calculation formula to calculate and obtain the target current value of the to-be-measured wire, wherein the current calculation formula is a corresponding relationship among a magnetic induction intensity variable, a virtual ring radius variable and a current value variable.

3. The method according to claim 2 , wherein an establishment method for the current calculation formula comprises:

acquiring a radius included angle parameter between a radius at which each first uniaxial TMR chip is located and a radius at which the to-be-measured wire is located;

acquiring a first distance parameter between each first uniaxial TMR chip and the to-be-measured wire;

acquiring a magnetic field included angle parameter between a magnetic field direction of each first uniaxial TMR chip and a corresponding magnetic sensitive direction of each first uniaxial TMR chip;

acquiring a second distance parameter between the to-be-measured wire and a center of the virtual ring;

acquiring the interference magnetic field parameter; and

establishing the current calculation formula according to the radius included angle parameter, the first distance parameter, the magnetic field included angle parameter, the second distance parameter, and the interference magnetic field parameter.

4. The method according to claim 1 , wherein the step of determining the target current value of the to-be-measured wire includes:

determining a plurality of candidate current measurement values according to the magnetic induction intensity of each first uniaxial TMR chip, the magnetic induction intensity of each second uniaxial TMR chip, and the radius of the virtual ring; and

determining the target current value from the plurality of candidate current measurement values.

5. The method according to claim 4 , wherein the step of determining the target current value from the plurality of candidate current measurement values includes:

calculating a ratio of an imaginary part to a real part of each candidate current measurement value; and

if the ratio is less than a preset threshold value, determining a candidate current measurement value corresponding to the ratio as the target current value.

6. The method according to claim 4 , wherein the step of determining the target current value from the plurality of candidate current measurement values includes:

determining a distance between the to-be-measured wire and the center of the ring corresponding to each candidate current measurement value according to each candidate current measurement value, the magnetic induction intensity of each first uniaxial TMR chip, the magnetic induction intensity of each second uniaxial TMR chip, and the radius of the virtual ring;

determining whether the distance between the to-be-measured wire and the center of the ring corresponding to each candidate current measurement value is less than R/2, wherein R represents the radius of the virtual ring; and

if a distance between the to-be-measured wire and the center of the ring corresponding to a candidate current measurement value is less than R/2, determining the candidate current measurement value as the target current value.

7. A computer-readable storage medium, on which a computer program is stored, wherein a processor, when executing the computer program, performs the method of claim 1 .

8. A current measurement apparatus, comprising:

a current measurement device including a current sensor and a processor connected to the current sensor;

wherein the processor is configured to calculate a target current value of a to-be-measured wire according to a magnetic induction intensity and a radius of a virtual ring;

wherein the current sensor includes four first uniaxial Tunnel Magnetoresistance (TMR) chips and two second uniaxial TMR chips, each of the first uniaxial TMR chips and each of the second uniaxial TMR chips is located on the virtual ring, wherein magnetic sensitive directions of the four first uniaxial TMR chips are perpendicular to the radius of the virtual ring, magnetic sensitive directions of two adjacent first uniaxial TMR chips are perpendicular to each other, magnetic sensitive directions of the two second uniaxial TMR chips are parallel to the radius of the virtual ring and opposite to each other, and the two second uniaxial TMR chips respectively have the same positions as two of the first uniaxial TMR chips;

wherein each of the first uniaxial TMR chips and each of the second uniaxial TMR chips is configured to collect a magnetic induction intensity, the magnetic induction intensity is configured to calculate a target current value of the to-be-measured wire, the magnetic induction intensity includes a magnetic induction intensity of the to-be-measured wire and an interference magnetic field intensity;

an acquisition module, configured to acquire magnetic induction intensities of four first uniaxial TMR chips and magnetic induction intensities of at least two second uniaxial TMR chips; and

a determination module configured to determine a target current value of the to-be-measured wire according to a magnetic induction intensity of each first uniaxial TMR chip, a magnetic induction intensity of each second uniaxial TMR chip, and a radius of a virtual ring.

Assignments (2)
CHANGE OF NAME Recorded Feb 19, 2025
From: DIGITAL GRID RESEARCH INSTITUTE, CHINA SOUTHERN POWER GRID
To: CSG DIGITAL POWER GRID RESEARCH INSTITUTE CO., LTD.
Reel/Frame 070259/0477 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 1, 2022
From: LI, PENG; LV, QIANCHENG; TIAN, BING; LI, LICHENG; LUO, BOFENG; LIU, ZHONG; WANG, ZHIMING; SUN, HONGDI; YIN, XU; ZHANG, JIAMING
To: DIGITAL GRID RESEARCH INSTITUTE, CHINA SOUTHERN POWER GRID
Reel/Frame 060563/0785 →
Priority Claims (1)
CN 202110284919.8 · Mar 17, 2021 · national
Continuity (1)
Related Publication 20240110956A1 · Apr 4, 2024
References Cited (27)
US 20110057650A1 · Hellwig et al. · 2011 [cited by applicant]
US 20120290240A1 · Fukui · 2012 [cited by examiner]
US 20140177328A1 · Gerber · 2014 [cited by examiner]
US 20170076743A1 · Hassan · 2017 [cited by examiner]
US 20200064157A1 · Marauska et al. · 2020 [cited by applicant]
CN 102012446A · 2011 [cited by applicant]
CN 102841232A · 2012 [cited by applicant]
CN 107328980A · 2017 [cited by applicant]
CN 109254191A · 2019 [cited by applicant]
CN 109283379A · 2019 [cited by applicant]
CN 109444510A · 2019 [cited by applicant]
CN 109521375A · 2019 [cited by applicant]
CN 109959816A · 2019 [cited by applicant]
CN 111398649A · 2020 [cited by applicant]
CN 111426870A · 2020 [cited by applicant]
CN 111458573A · 2020 [cited by applicant]
CN 111551776A · 2020 [cited by applicant]
CN 111624389A · 2020 [cited by applicant]
CN 111624531A · 2020 [cited by applicant]
CN 111650539A · 2020 [cited by applicant]
CN 111965579A · 2020 [cited by applicant]
WO 2015144541A2 · 2015 [cited by applicant]
International Search Report for corresponding Application No. PCT/CN2021/100222 dated Dec. 24, 2021, 5 pages. [cited by applicant]
Written Opinion for corresponding Application No. PCT/CN2021/100222 dated Dec. 24, 2021, 4 pages. [cited by applicant]
Chinese Office Action for corresponding Application No. 202110284919.8 dated Oct. 28, 2021, 8 pages. [cited by applicant]
Li Peng et al.,“Micro Current Measurement Technology Based on Tunnel Magnetoresistance”, “Southern Power System Technology” vol. 13, No. 4, Apr. 30, 2019, 10 pages. [cited by applicant]
First Search document for corresponding Application No. 2021102849198 date of filing Mar. 17, 2021, 2 pages. [cited by applicant]