Metal mesh array and manufacturing method thereof, thin film sensor and manufacturing method thereof

1. A method for manufacturing a metal mesh array, wherein the metal mesh array comprises a plurality of working areas and a plurality of redundant areas; the plurality of working areas and the plurality of redundant areas are alternately arranged in both a first direction and a second direction; wherein the method comprises:

providing a base substrate;

forming a first metal layer on the base substrate as a seed layer;

forming a first interlayer dielectric layer on a side of the seed layer away from the base substrate; wherein the first interlayer dielectric layer comprises a plurality of first groove structures and a plurality of second groove structures in the plurality of working areas and arranged in an intersecting manner; and

performing an electroplating process on the seed layer to form a plurality of first metal lines in the plurality of first groove structures and a plurality of second metal lines in the plurality of second groove structures, wherein the plurality of first metal lines and the plurality of second metal lines in the plurality of working areas are arranged in an intersecting manner, thereby forming a plurality of metal meshes;

wherein the first interlayer dielectric layer further comprises a plurality of third groove structures and a plurality of fourth groove structures in the plurality of redundant areas and arranged with extending directions thereof intersecting with each other, and a plurality of dividing blocks at positions where the extending directions of the plurality of third groove structures and the extending directions of the plurality of fourth groove structures intersect with each other; the plurality of dividing blocks divide the plurality of third groove structures into a plurality of groove portions, and divide the plurality of fourth groove structures into a plurality of groove portions; and

when performing an electroplating process on the seed layer to form a plurality of first metal lines in the plurality of first groove structures and a plurality of second metal lines in the plurality of second groove structures, the method further comprises:

forming a plurality of third metal lines in the plurality of third groove structures and a plurality of fourth metal lines in the plurality of fourth groove structures, wherein the plurality of third metal lines and the plurality of fourth metal lines are disconnected at positions where the plurality of third metal lines and the plurality of fourth metal lines intersect with each other, and extending directions of the plurality of third metal lines and the plurality of fourth metal lines intersect with each other in the plurality of redundant areas, thereby forming a plurality of redundant metal meshes.

2. The method for manufacturing a metal mesh array according to claim 1 , wherein the forming the first interlayer dielectric layer comprises:

through a hard mask exposure process and an inductively coupled plasma etching process, forming the plurality of first groove structures and the plurality of second groove structures in the plurality of working areas and arranged in an intersecting manner in the first interlayer dielectric layer; and/or forming the plurality of third groove structures and the plurality of fourth groove structures in the plurality of redundant areas and arranged with extending directions thereof intersecting with each other.

3. The method for manufacturing a metal mesh array according to claim 1 , wherein the forming the first interlayer dielectric layer comprises:

through a nano-imprinting process and an inductively coupled plasma etching process, forming the plurality of first groove structures and the plurality of second groove structures in the plurality of working areas and arranged in an intersecting manner in the first interlayer dielectric layer; and/or forming the plurality of third groove structures and the plurality of fourth groove structures in the plurality of redundant areas and arranged with extending directions thereof intersecting with each other.

4. The method for manufacturing a metal mesh array according to claim 1 , wherein the forming a first metal layer on the base substrate as a seed layer comprises:

depositing a first metal layer on one side of the base substrate, wherein the first metal layer covers the base substrate; and

wherein after the performing an electroplating process on the seed layer to form a plurality of first metal lines in the plurality of first groove structures and a plurality of second metal lines in the plurality of second groove structures, the method further comprises:

stripping the base substrate; and

removing a part of a material of the seed layer outside the plurality of first groove structures and the plurality of second groove structures in the first interlayer dielectric layer.

5. The method for manufacturing a metal mesh array according to claim 1 , wherein the forming a first metal layer on the base substrate as a seed layer comprises:

depositing a first metal layer on one side of the base substrate, and forming a plurality of metal patterns through a patterning process; and

forming the first interlayer dielectric layer on a side of the seed layer away from the base substrate; and in the step that the first interlayer dielectric layer comprises a plurality of first groove structures and a plurality of second groove structures in the plurality of working areas and arranged in an intersecting manner, the plurality of first groove structures and the plurality of second groove structures are arranged corresponding to the plurality of metal patterns.

6. The method for manufacturing a metal mesh array according to claim 1 , wherein after providing a base substrate, the method further comprises:

forming a second metal layer on one side of the base substrate; and

the forming a first metal layer as a seed layer on the base substrate comprises:

forming the first metal layer on a side of the second metal layer away from the base substrate, wherein an orthographic projection of the first metal layer on the base substrate coincides with an orthographic projection of the second metal layer on the base substrate.

7. The method for manufacturing a metal mesh array according to claim 6 , wherein before the forming a second metal layer on one side of the base substrate, the method further comprises:

forming a separation layer on the base substrate, wherein the separation layer covers the base substrate.

8. The method for manufacturing a metal mesh array according to claim 1 , wherein after forming the plurality of metal meshes, the method further comprises:

forming a flexible film on a side of the first interlayer dielectric layer away from the base substrate.

9. The method for manufacturing a metal mesh array according to claim 1 , wherein after forming the plurality of redundant metal meshes, the method further comprises:

forming a flexible film on a side of the first interlayer dielectric layer away from the base substrate.

10. A metal mesh array, comprising a plurality of working areas and a plurality of redundant areas; wherein the plurality of working areas and the plurality of redundant areas are alternately arranged in both a first direction and a second direction; the metal mesh array comprises:

a base substrate;

a first metal layer on the base substrate;

a first interlayer dielectric layer on a side of the first metal layer away from the base substrate, wherein the first interlayer dielectric layer comprises a plurality of first groove structures and a plurality of second groove structures in the plurality of working areas and arranged in an intersecting manner; and

a plurality of metal meshes, which comprise a plurality of first metal lines in the plurality of first groove structures and a plurality of second metal lines in the plurality of second groove structures;

wherein the first interlayer dielectric layer further comprises a plurality of third groove structures and a plurality of fourth groove structures in the plurality of redundant areas and arranged with extending directions thereof intersecting with each other, and a plurality of dividing blocks at positions where the extending directions of the plurality of third groove structures and the extending directions of the plurality of fourth groove structures intersect with each other; the plurality of dividing blocks divide the plurality of third groove structures into a plurality of groove portions, and divide the plurality of fourth groove structures into a plurality of groove portions; and

the metal mesh array further comprises:

a plurality of redundant metal meshes, which comprise a plurality of third metal lines in the plurality of third groove structures and a plurality of fourth metal lines in the plurality of fourth groove structures.

11. A thin film sensor, comprising the metal mesh array according to claim 10 .

12. A method of manufacturing a thin film sensor, comprising a method for manufacturing a metal mesh array, wherein the metal mesh array comprises a plurality of working areas and a plurality of redundant areas; the plurality of working areas and the plurality of redundant areas are alternately arranged in both a first direction and a second direction; wherein the method comprises:

providing a base substrate;

forming a first metal layer on the base substrate as a seed layer;

forming a first interlayer dielectric layer on a side of the seed layer away from the base substrate; wherein the first interlayer dielectric layer comprises a plurality of first groove structures and a plurality of second groove structures in the plurality of working areas and arranged in an intersecting manner; and

performing an electroplating process on the seed layer to form a plurality of first metal lines in the plurality of first groove structures and a plurality of second metal lines in the plurality of second groove structures, wherein the plurality of first metal lines and the plurality of second metal lines in the plurality of working areas are arranged in an intersecting manner, thereby forming a plurality of metal meshes;

wherein the first interlayer dielectric layer further comprises a plurality of third groove structures and a plurality of fourth groove structures in the plurality of redundant areas and arranged with extending directions thereof intersecting with each other, and a plurality of dividing blocks at positions where the extending directions of the plurality of third groove structures and the extending directions of the plurality of fourth groove structures intersect with each other; the plurality of dividing blocks divide the plurality of third groove structures into a plurality of groove portions, and divide the plurality of fourth groove structures into a plurality of groove portions; and

when performing an electroplating process on the seed layer to form a plurality of first metal lines in the plurality of first groove structures and a plurality of second metal lines in the plurality of second groove structures, the method further comprises:

forming a plurality of third metal lines in the plurality of third groove structures and a plurality of fourth metal lines in the plurality of fourth groove structures, wherein the plurality of third metal lines and the plurality of fourth metal lines are disconnected at positions where the plurality of third metal lines and the plurality of fourth metal lines intersect with each other, and extending directions of the plurality of third metal lines and the plurality of fourth metal lines intersect with each other in the plurality of redundant areas, thereby forming a plurality of redundant metal meshes.

13. The method of manufacturing a thin film sensor of claim 12 , wherein the forming the first interlayer dielectric layer comprises:

through a hard mask exposure process and an inductively coupled plasma etching process, forming the plurality of first groove structures and the plurality of second groove structures in the plurality of working areas and arranged in an intersecting manner in the first interlayer dielectric layer; and/or forming the plurality of third groove structures and the plurality of fourth groove structures in the plurality of redundant areas and arranged with extending directions thereof intersecting with each other.

14. The method of manufacturing a thin film sensor of claim 12 , wherein the forming the first interlayer dielectric layer comprises:

through a nano-imprinting process and an inductively coupled plasma etching process, forming the plurality of first groove structures and the plurality of second groove structures in the plurality of working areas and arranged in an intersecting manner in the first interlayer dielectric layer; and/or forming the plurality of third groove structures and the plurality of fourth groove structures in the plurality of redundant areas and arranged with extending directions thereof intersecting with each other.

15. The method of manufacturing a thin film sensor of claim 12 , wherein the forming a first metal layer on the base substrate as a seed layer comprises:

depositing a first metal layer on one side of the base substrate, wherein the first metal layer covers the base substrate; and

wherein after the performing an electroplating process on the seed layer to form a plurality of first metal lines in the plurality of first groove structures and a plurality of second metal lines in the plurality of second groove structures, the method further comprises:

stripping the base substrate; and

removing a part of a material of the seed layer outside the plurality of first groove structures and the plurality of second groove structures in the first interlayer dielectric layer.

16. The method of manufacturing a thin film sensor of claim 12 , wherein the forming a first metal layer on the base substrate as a seed layer comprises:

depositing a first metal layer on one side of the base substrate, and forming a plurality of metal patterns through a patterning process; and

forming the first interlayer dielectric layer on a side of the seed layer away from the base substrate; and in the step that the first interlayer dielectric layer comprises a plurality of first groove structures and a plurality of second groove structures in the plurality of working areas and arranged in an intersecting manner, the plurality of first groove structures and the plurality of second groove structures are arranged corresponding to the plurality of metal patterns.