Photoconductive charge trapping apparatus
Techniques, systems, and devices are disclosed for implementing a photoconductive device performing bulk conduction. In one exemplary aspect, a photoconductive device is disclosed. The device includes a light source configured to emit light; a crystalline material positioned to receive the light from the light source, wherein the crystalline material is doped with a dopant that forms a mid-gap state within a bandgap of the crystalline material to control a recombination time of the crystalline material; a first electrode coupled to the crystalline material to provide a first electrical contact for the crystalline material, and a second electrode coupled to the crystalline material to provide a second electrical contact for the crystalline material, wherein the first and the second electrodes are configured to establish an electric field across the crystalline material, and the crystalline material is configured to exhibit a substantially linear transconductance in response to receiving the light.
1 . A photoconductive apparatus, comprising:
a crystalline material positioned to receive light from a light source, the crystalline material comprising a bulk material doped with a dopant at a predetermined concentration level to form mid-gap levels below a conduction band of the crystalline material as carrier traps, the predetermined concentration level causing a recombination time associated with the crystalline material to be at least one order of magnitude smaller than a time of a signal that is applied to generate the light from the light source such that the crystalline material exhibits a linear transconductance in response to the light from the light source; and
a pair of electrodes coupled to the crystalline material and configured to allow an electric field to be established across the crystalline material.
2 . The photoconductive apparatus of claim 1 , wherein the linear transconductance is defined based on a generated current in the photoconductive apparatus in response to a light intensity of the light from the light source.
3 . The photoconductive apparatus of claim 1 , wherein the recombination time of the crystalline material is in an order of 1 nanosecond and wherein the time of the applied signal is in an order of 10 nanoseconds.
4 . The photoconductive apparatus of claim 1 , wherein the predetermined concentration level is below 7.0×10 15 cm −3 and above 1.8×10 15 cm −3 .
5 . The photoconductive apparatus of claim 1 , wherein the crystalline material comprises silicon carbide.
6 . The photoconductive apparatus of claim 1 , wherein the predetermined concentration level produces a linear carrier decay time without a plateau with a single time constant that dominates carrier recombination process.
7 . The photoconductive apparatus of claim 1 , wherein the dopant includes one of: vanadium, nitrogen, aluminum, or boron.
8 . The photoconductive apparatus of claim 1 , wherein the crystalline material includes a first facet on a first end to allow the light to enter the crystalline material, and a second facet on an opposite end that is oblique with respect to a path of the light that enters the crystalline material.
9 . The photoconductive apparatus of claim 1 , wherein the crystalline material has a curved surface.
10 . The photoconductive apparatus of claim 1 , further comprising:
a reflective coating on the crystalline material to allow the light to reflect within the crystalline material.
11 . The photoconductive apparatus of claim 1 , wherein a wavelength of the light is 445 nm upon a bandgap of the crystalline material being around 3.0 eV.
12 . A photoconductive device, comprising:
a light source configured to emit light under a control of a pulse signal;
a crystalline material positioned to receive the light from the light source, wherein the crystalline material is doped with a dopant having a concentration of a predetermined value to form mid-gap levels below a conduction band of the crystalline material as carrier traps, the predetermined value causing a recombination time of the crystalline material to be at least one order of magnitude smaller than a time of a signal that is applied to emit the light from the light source such that the crystalline material exhibits a linear carrier decay in response to the light from the light source;
a first electrode coupled to the crystalline material to provide a first electrical contact for the crystalline material, and
a second electrode coupled to the crystalline material to provide a second electrical contact for the crystalline material, wherein the first electrode and the second electrode are configured to establish an electric field across the crystalline material.
13 . The photoconductive device of claim 12 , wherein the recombination time of the crystalline material is in an order of 1 nanosecond and wherein the time of the applied signal in an order of 10 nanoseconds.
14 . The photoconductive device of claim 12 , wherein the predetermined value of the concentration is below 7.0×10 15 cm −3 and above 1.8×10 15 cm −3 .
15 . The photoconductive device of claim 12 , wherein the crystalline material comprises silicon carbide, and wherein the dopant includes one of: vanadium, nitrogen, aluminum, or boron.
16 . The photoconductive device of claim 12 , wherein the crystalline material comprises 6H—SiC, and wherein a wavelength of the light is greater than 413 nm.
17 . The photoconductive device of claim 12 , further comprising:
an optical waveguide positioned in a path of the light between the light source and the crystalline material to direct the light from the light source to the crystalline material.
18 . The photoconductive device of claim 12 , wherein the first electrode is formed as a base plate that includes one of a metal, a metal alloy, or a metal matrix, and wherein the photoconductive device further comprises:
a metalized substrate positioned between the crystalline material and the base plate to spread heat generated by the crystalline material when excited by the light.
19 . The photoconductive device of claim 18 , further comprising a bond material positioned between the metalized substrate and the crystalline material, or between the metalized substrate and the first electrode, to reduce gradients of coefficients of thermal expansion between the metalized substrate and the crystalline material, or between the metalized substrate and the base plate.
20 . The photoconductive device of claim 12 , wherein wavelength of the light is 445 nm upon a bandgap of the crystalline material being around 3.0 eV.
21 . The photoconductive device of claim 12 , wherein a wavelength of the light that enters the crystalline material is longer than a wavelength corresponding to a bandgap of the crystalline material.