Integrated transistor and resistor-diode-capacitor snubber
In some aspects, the techniques described herein relate to a circuit including: a metal-oxide semiconductor field-effect transistor (MOSFET) including a gate, a source, and a drain; and a snubber circuit coupled between the drain and the source, the snubber circuit including: a diode having a cathode and an anode, the cathode being coupled with the drain; a capacitor having a first terminal coupled with the anode, and a second terminal coupled with the source; and a resistor having a first terminal coupled with the anode and the first terminal of the capacitor, and a second terminal coupled with the source.
1. A circuit comprising:
a metal-oxide semiconductor field-effect transistor (MOSFET) including a gate, a source, and a drain; and
a snubber circuit coupled between the drain and the source, the snubber circuit including:
a diode having a cathode and an anode, the cathode being coupled with the drain;
a capacitor having a first terminal coupled with the anode, and a second terminal coupled with the source; and
a resistor having a first terminal coupled with the anode and the first terminal of the capacitor, and a second terminal coupled with the source.
2. The circuit of claim 1 , wherein a breakdown voltage of the diode is less than a breakdown of the MOSFET, the snubber circuit being configured to:
charge the capacitor when a voltage on the drain exceeds a breakdown voltage of the diode; and
discharge the capacitor when a voltage on the anode is greater than the voltage on the drain.
3. The circuit of claim 2 , wherein charging the capacitor when the voltage on the drain exceeds the breakdown voltage of the diode includes charging the capacitor to a voltage that is equal to a drain-to-source voltage of the MOSFET minus the breakdown voltage of the diode.
4. The circuit of claim 2 , wherein discharging the capacitor includes discharging the capacitor via the resistor.
5. The circuit of claim 1 , wherein a breakdown voltage of the diode is less that a drain-to-source breakdown voltage of the MOSFET.
6. The circuit of claim 1 , wherein the MOSFET and the snubber circuit are monolithically included in a semiconductor die.
7. The circuit of claim 1 , wherein:
the MOSFET is included in a first semiconductor die; and
the snubber circuit is included in a second semiconductor die that is co-packaged with the first semiconductor die.
8. The circuit of claim 1 , wherein:
the MOSFET, the diode and the resistor are included in a semiconductor die; and
the capacitor is a surface-mount capacitor disposed on the semiconductor die.
9. The circuit of claim 1 , wherein:
the circuit is included in a power converter circuit; and
a breakdown voltage of the diode is greater than a supply voltage of the power converter circuit.
10. A semiconductor device comprising:
a semiconductor region of a first conductivity type;
an implant of a second conductivity type disposed in the semiconductor region, the second conductivity type being opposite the first conductivity type;
a metal-oxide semiconductor field-effect transistor (MOSFET) disposed in the semiconductor region, the MOSFET including:
a gate;
a source of the first conductivity type; and
a drain included in the semiconductor region;
a capacitor having:
a first terminal that is at least one of:
included, at least in part, in the implant; or
coupled with the implant;
a second terminal coupled with the source; and
a dielectric disposed between the first terminal and the second terminal; and
a resistor having:
a first terminal coupled with the source; and
a second terminal coupled with the implant,
the implant including an anode of a diode, and the semiconductor region including a cathode of the diode.
11. The semiconductor device of claim 10 , where a drain-to source breakdown voltage of the MOSFET is greater than a breakdown voltage of the diode.
12. The semiconductor device of claim 10 , wherein:
the dielectric is disposed on the implant on a surface of the semiconductor region; and
the second terminal of the capacitor includes a metal layer disposed on the dielectric of the capacitor, the metal layer being coupled with the source.
13. The semiconductor device of claim 10 , wherein:
the capacitor is a metal-insulator-metal (MIM) capacitor;
the first terminal of the capacitor includes a first metal layer disposed on the implant; and
the second terminal of the capacitor includes a second metal layer disposed on the dielectric.
14. The semiconductor device of claim 13 , wherein the MIM capacitor is a vertical, serpentine MIM capacitor.
15. The semiconductor device of claim 10 , wherein:
the capacitor is a metal-insulator-metal (MIM) capacitor;
the second terminal of the capacitor includes:
a first metal layer disposed on the MOSFET, the dielectric being disposed on the first metal layer; and
a second metal layer disposed on the dielectric, the second metal layer being disposed on the dielectric and coupled with the first metal layer by at least one via formed through the dielectric; and
the second terminal of the capacitor is disposed within the dielectric.
16. The semiconductor device of claim 10 , wherein:
the dielectric is disposed on the implant;
a metal layer is disposed on the dielectric, the metal layer being coupled with the implant by at least one contact formed through the dielectric; and
the second terminal of the capacitor is disposed within the dielectric, the capacitor including a first capacitor coupled in parallel with a second capacitor.
17. The semiconductor device of claim 10 , wherein:
the second terminal of the capacitor is disposed in a dielectric-lined trench disposed in the semiconductor region, the dielectric-lining of the trench including the dielectric of the capacitor; and
the implant is disposed in a mesa of the semiconductor region adjacent to the dielectric-lined trench.
18. A semiconductor device comprising:
a first semiconductor die including a metal-oxide-semiconductor field-effect transistor (MOSFET), the first semiconductor die including:
a gate terminal of the MOSFET on a first surface;
a source terminal of the MOSFET on the first surface; and
a drain terminal of the MOSFET on a second surface, the second surface being opposite the first surface;
a second semiconductor die including:
a first terminal on a first surface;
a second terminal on a second surface opposite the first surface; and
a snubber circuit including:
a diode having a cathode coupled with the second terminal of the second semiconductor die;
a capacitor coupled between an anode of the diode and the first terminal of the second semiconductor die; and
a resistor coupled between the anode and the first terminal of the second semiconductor die, such that the resistor is coupled in parallel with the capacitor;
a die-attach paddle, the second surface of the first semiconductor die and the second surface of the second semiconductor die being disposed on the die-attach paddle, such that the die-attach paddle couples the drain terminal of the MOSFET with the second terminal of the second semiconductor die; and
an electrical connector coupling the source terminal of the MOSFET with the first terminal of the second semiconductor die.
19. The semiconductor device of claim 18 , wherein a drain-to-source breakdown voltage of the MOSFET is greater than a breakdown voltage of the diode.
20. The semiconductor device of claim 19 , wherein the snubber circuit is configured to:
charge the capacitor when a voltage on the drain terminal of the MOSFET exceeds the breakdown voltage of the diode; and
discharge the capacitor when a voltage on the anode is greater than the voltage on the drain terminal.