Method for producing a metal-ceramic substrate

1. A method for producing a metal-ceramic substrate, the method comprising:

a) providing a stack comprising:

a1) a ceramic body,

a2) a metal foil, and

a3) a solder material in contact with the ceramic body and the metal foil, wherein the solder material comprises:

(i) a metal having a melting point of at least 700° C.,

(ii) a metal having a melting point of less than 700° C., and

(iii) an active metal; and

b) heating the stack, wherein at least one of the following conditions is satisfied:

b1) a high temperature heating duration is no more than 60 min, wherein the high temperature heating duration refers to the duration in which the stack is exposed, upon heating, to a temperature that corresponds to at least a peak temperature minus 250° C.;

b2) a peak temperature heating duration is no more than 30 min, wherein the peak temperature heating duration refers to the duration in which the stack is exposed, upon heating, to a temperature that corresponds to at least the peak temperature minus 50° C.; and

b3) a heating duration is no more than 60 min, wherein the heating duration denotes the period of time that the stack needs to reach the peak temperature, starting from a temperature of 100° C.

2. The method according to claim 1 , wherein the ceramic of the ceramic body is selected from the group consisting of aluminum nitride ceramics, silicon nitride ceramics, and aluminum oxide ceramics.

3. The method according to claim 1 , wherein the metal of the metal foil is copper.

4. The method according to claim 1 , wherein the solder material is a paste which comprises (a) at least one metal component having the metal with a melting point of at least 700° C., the metal with a melting point of less than 700° C., and the active metal, and (b) an organic medium.

5. The method according to claim 1 , wherein the metal having a melting point of at least 700° C. is copper.

6. The method according to claim 1 , wherein the metal having a melting point of less than 700° C. is selected from the group consisting of tin, bismuth, indium, gallium, zinc, antimony, and magnesium.

7. The method according to claim 1 , wherein the active metal is selected from the group consisting of hafnium, titanium, zirconium, niobium, tantalum, vanadium, and cerium.

8. The method according to claim 1 , wherein the solder material has less than 3.0 percent by weight of silver.

9. The method according to claim 1 , wherein the stack is heated with a heating zone.

10. The method according to claim 9 , wherein a non-oxidizing atmosphere is present in the heating zone.

11. The method according to claim 9 , wherein a nitrogen atmosphere is present in the heating zone.

12. The method according to claim 1 , wherein the heating the stack takes place in a continuous furnace.

13. The method according to claim 1 , wherein the peak temperature is in the range of 700-1100° ° C.

14. The method according to claim 9 , wherein the stack and the heating zone are arranged statically relative to each other.

15. The method according to claim 1 , wherein the peak temperature is in the range of 900-935° ° C.

16. The method according to claim 4 , wherein the solder material further comprises an inorganic binder.

17. The method according to claim 4 , wherein the solder material further comprises one or more additives selected from the group consisting of stabilizers, surfactants, dispersants, rheology modifiers, wetting aids, defoamers, fillers, and hardeners.

18. The method according to claim 1 , wherein the solder material has less than 3.0 percent by weight of silicon.

19. The method according to claim 1 , wherein at least two of the conditions b1) through b3) are satisfied.

20. The method according to claim 1 , wherein all three of the conditions b1) through b3) are satisfied.