Trench isolation with conductive structures
The present disclosure describes a semiconductor device having metal boundary trench isolation with electrically conductive intermediate structures acting as a metal diffusion barrier. The semiconductor structure includes a first fin structure and a second fin structure on a substrate, an insulating layer between the first and second fin structures, a gate dielectric layer on the insulating layer and the first and second fin structures, and a first work function stack and a second work function stack on the gate dielectric layer. The first work function stack is over the first fin structure and a first portion of the insulating layer, and the second work function stack is over the second fin structure and a second portion of the insulating layer adjacent to the first portion. The semiconductor structure further includes a conductive intermediate structure on the gate dielectric layer and between the first and second work function stacks.
1. A method, comprising:
forming a gate dielectric layer on a first fin structure, a second fin structure, and an insulating layer between the first and second fin structures;
forming a first work function stack on the gate dielectric layer over the first fin structure and a first portion of the insulating layer;
forming a second work function stack on the gate dielectric layer over the second fin structure and a second portion of the insulating layer, wherein the second work function stack is in contact with the first work function stack; and
forming a conductive structure between the first work function stack and the second work function stack, wherein the conductive structure is in contact with the gate dielectric layer.
2. The method of claim 1 , further comprising removing a first portion of the first work function stack and a second portion of the second work function stack, wherein the first portion is in contact with the second portion.
3. The method of claim 2 , further comprising removing a portion of the gate dielectric layer below the first and second portions.
4. The method of claim 1 , wherein forming the gate dielectric layer comprises:
forming an interfacial layer on the first and second fin structures; and
forming a high-k dielectric layer on the interfacial layer and the insulating layer, wherein the high-k dielectric layer is in contact with the insulating layer.
5. The method of claim 1 , wherein forming the gate dielectric layer comprises:
forming an interfacial layer on the insulating layer and the first and second fin structures; and
forming a high-k dielectric layer on the interfacial layer.
6. The method of claim 1 , wherein forming the first work function stack comprises:
depositing an aluminum-free work function layer on the gate dielectric layer;
depositing an aluminum-based work function layer on the aluminum-free work function layer; and
depositing a shield layer on the aluminum-based work function layer.
7. The method of claim 1 , wherein forming the second work function stack comprises:
depositing an aluminum-based work function layer on the gate dielectric layer; and
depositing a shield layer on the aluminum-based work function layer.
8. The method of claim 1 , wherein forming the conductive structure comprises forming at least one of a capping layer, a glue layer, and a metal fill layer between the first work function stack and the second work function stack to block metal diffusion between the first work function stack and the second work function stack.
9. A method, comprising:
forming a gate dielectric layer on an insulating layer;
forming first and second work function stacks on the gate dielectric layer, wherein the first work function stack is in contact with the second work function stack at a boundary;
forming a trench at the boundary between the first and second work function stacks, wherein the trench exposes a top surface of the gate dielectric layer; and
forming a conductive structure in the trench, wherein the conductive structure is in contact with the top surface of the gate dielectric layer.
10. The method of claim 9 , wherein forming the trench at the boundary comprises:
forming a mask layer on the first and second work function stacks, wherein the mask layer exposes a portion of the first and second work function stacks at the boundary; and
removing the exposed portion of the first and second work function stacks.
11. The method of claim 10 , further comprising removing a portion of the gate dielectric layer below the exposed portion of the first and second work function stacks.
12. The method of claim 9 , wherein forming the gate dielectric layer comprises:
forming an interfacial layer on the insulating layer; and
forming a high-k dielectric layer on the interfacial layer.
13. The method of claim 9 , wherein forming the gate dielectric layer comprises forming a high-k dielectric layer on the insulating layer.
14. The method of claim 9 , wherein forming the first work function stack comprises:
depositing an aluminum-free work function layer on the gate dielectric layer;
depositing an aluminum-based work function layer on the aluminum-free work function layer; and
depositing a shield layer on the aluminum-based work function layer.
15. The method of claim 9 , wherein forming the second work function stack comprises:
depositing an aluminum-based work function layer on the gate dielectric layer; and
depositing a shield layer on the aluminum-based work function layer.
16. The method of claim 9 , wherein forming the conductive structure comprises depositing at least one of a capping layer, a glue layer, and a metal fill layer in the trench.
17. A method, comprising:
forming a gate dielectric layer on a first fin structure, a second fin structure, and an insulating layer between the first and second fin structures;
forming a first work function stack on the gate dielectric layer over the first fin structure and a first portion of the insulating layer;
forming a second work function stack on the gate dielectric layer over the second fin structure and a second portion of the insulating layer, wherein the second work function stack is in contact with the first work function stack at a boundary;
removing a portion of the first work function stack and a portion of the second work function stack at the boundary to expose a top surface of the gate dielectric layer; and
forming a conductive structure on the exposed top surface of the gate dielectric layer.
18. The method of claim 17 , further comprising removing a portion of the gate dielectric layer at the boundary below the first and second work function stacks.
19. The method of claim 17 , wherein forming the first work function stack comprises:
depositing an aluminum-free work function layer on the gate dielectric layer;
depositing an aluminum-based work function layer on the aluminum-free work function layer; and
depositing a shield layer on the aluminum-based work function layer.
20. The method of claim 17 , wherein forming the second work function stack comprises:
depositing an aluminum-based work function layer on the gate dielectric layer; and
depositing a shield layer on the aluminum-based work function layer.