Display apparatus including overlapping elements
A display apparatus includes a first transistor including a first semiconductor layer and a first electrode that at least partially overlaps the first semiconductor layer. A first capacitor includes the first electrode and a second electrode that at least partially overlaps the first electrode. A second capacitor includes the second electrode and a third electrode that at least partially overlaps the second electrode. A first data line is configured to transfer a data voltage therethrough. First and second scan lines are configured to transfer first and second scan signals therethrough, respectively. A second transistor connects the first data line to the second electrode in response to the first scan signal. A third transistor connects the first electrode to a drain of the first transistor in response to the second scan signal.
1. A display apparatus, comprising:
a first transistor comprising a first semiconductor layer and a first electrode that at least partially overlaps the first semiconductor layer in a depth direction;
a first capacitor comprising the first electrode and a second electrode that at least partially overlaps the first electrode in the depth direction;
a second capacitor comprising the second electrode and a third electrode that at least partially overlaps the second electrode in the depth direction;
a first data line configured to transfer a data voltage therethrough;
a first scan line configured to transfer first scan signals therethrough;
a second scan line configured to transfer second scan signals therethrough;
a second transistor connecting the first data line to the second electrode in response to the first scan signal; and
a third transistor connecting the first electrode to a drain of the first transistor in response to the second scan signal,
wherein the depth direction is a direction orthogonal to a plane of a display surface of the display apparatus.
2. The display apparatus of claim 1 , wherein the first transistor has a conductivity type that is opposite to a conductivity type of the third transistor.
3. The display apparatus of claim 2 , wherein the second transistor has a conductivity type that is the same as a conductivity type of the third transistor.
4. The display apparatus of claim 1 , further comprising a power line electrically connected to the third electrode and configured to transfer a driving voltage therethrough.
5. The display apparatus of claim 4 , further comprising:
a display element including an anode and a cathode;
a third scan line configured to transfer a third scan signal therethrough;
a fourth scan line configured to transfer a fourth scan signal therethrough;
an emission control line configured to transfer an emission control signal therethrough;
a first voltage line configured to transfer an initialization voltage therethrough;
a fourth transistor connecting the first voltage line to the first electrode in response to the third scan signal;
a fifth transistor connecting the power line to a source of the first transistor in response to, the emission control signal;
a sixth transistor connecting the drain of the first transistor to the anode of the display element in response to the emission control signal; and
a seventh transistor connecting, the first voltage line to the anode of the display element in response to the fourth scan signal.
6. The display apparatus of claim 5 , further comprising:
a second voltage line configured to transfer a reference voltage therethrough; and
an eighth transistor connecting the second voltage line to the second electrode in response to the second scan signal.
7. The display apparatus of claim 5 , further comprising:
a third voltage line configured to transfer a bias voltage therethrough; and
a ninth transistor connecting the third voltage line to the source of the first transistor in response to the fourth scan signal.
8. The display apparatus of claim 1 , wherein the second transistor is disposed over the first transistor, and the second transistor comprises a second semiconductor layer and a fourth electrode that at least partially overlaps the second semiconductor layer, and
wherein the first semiconductor layer comprises a silicon semiconductor material, and the second semiconductor layer comprises an oxide semiconductor material.
9. The display apparatus of claim 8 , further comprising a fifth electrode that overlaps the second semiconductor, layer, in the depth direction, the fifth electrode at least partially overlapping the second semiconductor layer, and the fifth electrode electrically connected to the fourth electrode.
10. The display apparatus of claim 9 , wherein the fifth electrode and the third electrode are each disposed a same distance from a substrate of the display apparatus, in the depth direction.