IP Library Granted Patent US 12,416,059
Granted Patent B2
US 12,416,059 · App. 17/816,654 · Granted Sep 16, 2025

Preparation method of glassless grain-oriented silicon steel and product thereof

Inventors: Xianhui Wang (Hebei, CN); Qian Gao (Hebei, CN); Maolin Sun (Hebei, CN); Jian Gong (Hebei, CN); Huiming Xiao (Hebei, CN); Zhaoyue Liu (Hebei, CN); Renhao Teng (Hebei, CN); Songshan Zhao (Hebei, CN); Zhiyuan Hu (Hebei, CN); Jiebin Qi (Hebei, CN); Xuechang You (Hebei, CN); Ruifeng Li (Hebei, CN); Donghe Song (Hebei, CN); Aixing Wang (Hebei, CN)
Assignee: Shougang Zhixin Electromagnetic Materials (Qian'an) Co., Ltd.
C21D9/46C21D1/28C21D1/72C21D1/76C21D6/008C21D8/1222C21D8/1233C21D8/1255C21D8/1261C21D8/1283C22C38/001C22C38/002C22C38/008C22C38/02C22C38/04C22C38/06C22C38/42C22C38/60H01F1/147C21D1/84C21D3/04C21D8/1205C21D8/1227C21D8/1238C21D8/1244C21D8/1272C21D8/1277C21D2201/05C22C38/20C22C38/34C22C2202/02C23C8/02C23C8/26C23C8/80H01F1/18
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Quick Facts
Patent No.
US 12,416,059
App. No.
17/816,654
Granted
Sep 16, 2025
Kind
B2
Abstract

A preparation method of glassless grain-oriented silicon steel includes the following operations. During a decarburization annealing, a thickness of an oxide film on a surface of strip is 1.5-2.5 μm; an atomic weight ratio of Si element and Fe element in the oxide film satisfies: Si/(Si+Fe)≥0.76; during a high-temperature annealing, a cooling stage includes sequentially: cooling with an inner cover when a temperature drops from 1200° C. to 500° C.; wherein a protective gas is a mixed gas containing nitrogen and hydrogen, and a volume percentage of the hydrogen in the mixed gas is >3%; cooling with the inner cover when the temperature drops from 500° C. to 200° C.; wherein the protective gas is nitrogen; and cooling in air by removing the inner cover when the temperature is <200° C.

Claims (22)

1. A preparation method of glassless grain-oriented silicon steel, comprising processes of steelmaking and continuous casting to obtain a casting slab, casting slab heating, hot rolling, normalizing, cold rolling, decarburization annealing, nitriding, separator coating, annealing, and hot stretch flattening and coating;

wherein:

during the decarburization annealing, a dew point is between 38-58° C. and a heating temperature is between 800-850° C. wherein a thickness of an oxide film formed on a surface of strip is between 1.5-2.5 μm; and an atomic weight ratio of Si element and Fe element in the oxide film satisfies: Si/(Si+Fe) ≥0.76;

during the separator coating, a separator comprises: a component A, a component B, a component C, and a component D; wherein: the component A is MgO, or a mixture containing MgO and Al 2 O 3 ; the component B is one or more selected from a group consisting of NaCl, KCl, MgCl 2 , ZnCl 2 , BaCl 2 , SrCl 2 , MnCl 2 , CaCl 2 ), BiONcoCl, SbOCl, Bi(NO 3 ) 2 , Cu(NO 3 ) 2 , NaNO 3 , and NO 3 NH 4 ; the component C is a low-melting-point compound with a melting point ≤820° C.; and the component D is CaO or Ca(OH) 2 ; wherein in the separator, a mass ratio of the component A, the component B, the component C, and the component D is 100:(0.5-6):(0.6-3):(0.6-5.3);

during the annealing, a cooling stage comprises sequentially: a) cooling from a temperature of 1200° C. to 500° C. with an inner cover, wherein a protective gas is a mixed gas containing nitrogen and hydrogen, and a volume percentage of the hydrogen in the mixed gas is >3%; b) cooling from a temperature of 500° C. to 200° C. with the inner cover, wherein the protective gas is nitrogen; and c) cooling in air by removing the inner cover when temperature is <200° C.;

during the hot stretch flattening and coating, a four-step washing process is used, and the four-step washing process comprises sequentially: a) washing with water; b) acid-washing with a mixed solution containing sulfuric acid with a mass concentration of 1%-10% and nitric acid with a mass concentration of 1%-5%; wherein a temperature of the acid-washing is between 50-80° C.; c) washing with a mixture containing water and a complexing agent for Fe ions, wherein in the mixture, a mass concentration of the complexing agent for Fe ions is between 0.5-5%; and d) washing with water;

wherein the casting slab comprises, in mass percentage, C: 0.05-0.09%, Si: 2.9-4.6%, Mn: 0.05-0.20%, S: 0.005-0.020%, Als: 0.0225-0.0325%, N: 0.0045-0.0145%, Sn: 0.01-0.30%, Sb: 0.002-0.15%, Cr: 0.01-0.5%, and Cu: 0.01-0.8%, and remainder: Fe and inevitable impurity elements.

2. The preparation method of glassless grain-oriented silicon steel according to claim 1 , wherein the component A is the mixture containing MgO and Al 2 O 3 ; and in the mixture containing MgO and Al 2 O 3 , a mass fraction of the Al 2 O 3 is ≤60%, and a volume percentage of particles with a particle size ≥10 μm is between 30-60%.

3. The preparation method of glassless grain-oriented silicon steel according to claim 1 , wherein an activity of the MgO as measured by citric acid is between 200-2000 S; and

a specific surface area of the Al 2 O 3 is between 15-50 m 2 /g.

4. The preparation method of glassless grain-oriented silicon steel according to claim 1 , wherein the low-melting-point compound with the melting point ≤820° C. is one or more selected from a group consisting of boron oxide, sodium carbonate, borax, and antimony oxide.

5. The preparation method of glassless grain-oriented silicon steel according to claim 4 , wherein the separator further comprises NH 4 Cl, wherein a mass ratio of the component A and the NH 4 Cl is 100:(1-2.1).

6. The preparation method of glassless grain-oriented silicon steel according to claim 1 , wherein during the casting slab heating, a heating temperature of the casting slab is 1150° C.

7. The preparation method of glassless grain-oriented silicon steel according to claim 1 , the thickness of the oxide film formed on the surface of the strip is 1.5-2.5 μm.

8. The preparation method of glassless grain-oriented silicon steel according to claim 7 , the thickness of the oxide film formed on the surface of the strip is 1.9-2.3 μm.

9. The preparation method of glassless grain-oriented silicon steel according to claim 1 , wherein the component A is the mixture containing MgO and Al 2 O 3 ; and in the mixture containing MgO and Al 2 O 3 , a mass ratio of the MgO and the Al 2 O 3 is 90:5.

10. The preparation method of glassless grain-oriented silicon steel according to claim 1 , wherein the low-melting-point compound with the melting point ≤ 820° C. is boron oxide or antimony oxide.

11. The preparation method of glassless grain-oriented silicon steel according to claim 1 , wherein the separator comprises the component A, the component B, the component C, the component D, and NH 4 Cl; and in the separator, a mass ratio of the component A, the component B, the component C, the component D, and the NH 4 Cl is 100:3:2:5:1.9.

12. The preparation method of glassless grain-oriented silicon steel according to claim 1 , wherein the component A is the mixture containing MgO and Al 2 O 3 ; the component B is MgCl 2 : the component C is antimony oxide; and the component D is Ca(OH) 2 .

13. The preparation method of glassless grain-oriented silicon steel according to claim 1 , wherein the complexing agent for Fe ions is ammonium citrate.

14. The preparation method of glassless grain-oriented silicon steel according to claim 1 , wherein the casting slab comprises, in mass percentage, C: 0.05-0.09%, Si: 2.9-4.6%, Mn: 0.05-0.20%, S: 0.005-0.020%, Als: 0.0225-0.0325%, N: 0.0045-0.0145%, Sn: 0.01-0.30%, Sb: 0.002-0.15%, Cr: 0.01-0.5%, Cu: 0.01-0.8%, and remainder: Fe and inevitable impurity elements.

15. The preparation method of glassless grain-oriented silicon steel according to claim 1 , wherein the casting slab comprises, in mass percentage, C: 0.06-0.07%, Si: 3.2-3.5%, Mn: 0.16-0.17%, S: 0.015-0.019%, Als: 0.028-0.030%, N: 0.012-0.013%, Sn: 0.10-0.20%, Sb: 0.09-0.11%, Cr: 0.3-0.4%, Cu: 0.1-0.3%, and remainder: Fe and inevitable impurity elements.

Assignments (3)
CHANGE OF NAME Recorded Sep 24, 2024
From: SHOUGANG ZHIXIN QIAN'AN ELECTROMAGNETIC MATERIAL CO., LTD.
To: SHOUGANG ZHIXIN ELECTROMAGNETIC MATERIALS (QIAN'AN) CO., LTD.
Reel/Frame 068685/0091 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 4, 2023
From: BEIJING SHOUGANG CO., LTD.
To: SHOUGANG ZHIXIN QIAN'AN ELECTROMAGNETIC MATERIAL CO., LTD.
Reel/Frame 065127/0609 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 1, 2022
From: WANG, XIANHUI; GAO, QIAN; SUN, MAOLIN; GONG, JIAN; XIAO, HUIMING; LIU, ZHAOYUE; TENG, RENHAO; ZHAO, SONGSHAN; HU, ZHIYUAN; QI, JIEBIN; YOU, XUECHANG; LI, RUIFENG; SONG, DONGHE; WANG, AIXING
To: SHOUGANG ZHIXIN QIAN'AN ELECTROMAGNETIC MATERIAL CO., LTD.; BEIJING SHOUGANG CO., LTD.
Reel/Frame 060689/0895 →
Priority Claims (1)
CN 202011495799.8 · Dec 17, 2020 · national
Continuity (2)
Continuation PCTCN2021129607 · Nov 9, 2021
Related Publication 20220364197A1 · Nov 17, 2022
References Cited (7)
US 4875947A · Nakayama · 1989 [cited by examiner]
US 20160020006A1 · Watanabe · 2016 [cited by examiner]
US 20160194731A1 · Han · 2016 [cited by examiner]
CN 102952931A · 2013 [cited by applicant]
CN 104726668A · 2015 [cited by applicant]
CN 111302366A · 2020 [cited by applicant]
First Office Action of the Chinese application No. 2020114957998, issued on May 25, 2022. [cited by applicant]