Granted Patent B2

US 12,321,093 · App. 17/821,004 · Granted Jun 3, 2025

Inventor: Soeun Shin (Suwon-si, KR)

Assignee: SAMSUNG ELECTRONICS CO., LTD.

G03F1/70G03F1/78

Abstract

Claims (85)

1. Method for obtaining exposure data, comprising:

receiving MTO (Mask Tape Out) design data for a mask pattern;

performing mask data preparation with respect to the MTO design data to obtain exposure data;

extracting two-dimensional contours of a plurality of types of test patterns in an exposure mask through simulation using a mask process model;

measuring first critical dimensions at measurement points of the contour for each of the plurality of types of test patterns by using a metrology algorithm, and averaging the first critical dimensions to obtain a first average critical dimension for each of the plurality of types of test patterns;

measuring second critical dimensions at the measurement points in consideration of dispersion in each of the plurality of types of test patterns using an inverse function of a standard normal distribution, and averaging the second critical dimensions in consideration of the dispersion to obtain a second average critical dimension for each of the plurality of types of test patterns;

calculating a mean to target (MTT) value as a difference between the second average critical dimension and a target critical dimension for each of the plurality of types of test patterns;

calculating differences between ones of the MTT values respectively calculated for each of the plurality of types of test patterns; and,

correcting the exposure data when one or more of the differences between the ones of the MTT values is outside of a tolerance threshold.

2. The method of claim 1 , wherein measuring second critical dimensions at the measurement points in consideration of the dispersion in each of the plurality of types of test patterns, comprises:

generating a probability value of the second critical dimensions at the measurement points using a Gaussian random number generator; and

calculating a Normal Inverse Cumulative Distribution Function by combining the corresponding first average critical dimension and a dispersion using process monitoring information, which is expressed by the formula below;

x=f ( x ) −1 ( p ,mean,sigma)

x: the second critical dimension in consideration of dispersion

f(x): Gaussian normal distribution function

p: Gaussian random number

Mean: the first average critical dimension

Sigma: the dispersion using process monitoring information.

3. The method of claim 1 , wherein the metrology algorithm is configured for use in measuring a critical dimension of an actual exposure pattern.

4. The method of claim 1 , wherein measuring the first critical dimensions at measurement points of the contour for each of the plurality of types of test patterns by using the metrology algorithm comprises:

predetermining a region of interest (ROI) for measuring the first critical dimension of the contour; and

measuring the first critical dimension at each of the measurement points in the region of interest.

5. The method of claim 4 , wherein the region of interest (ROI) and the measurement points for measuring the first critical dimensions in the contour are the same as a region of interest (ROI) and measurement points used in measuring critical dimensions of an actual exposure pattern.

6. The method of claim 1 , wherein the plurality of types of test patterns include first patterns disposed in a scribe lane, second patterns disposed in a chip region, and a third pattern for correcting a dose of an electron beam.

7. The method of claim 6 , wherein calculating differences between ones of the MTT values respectively calculated for each of the plurality of types of test patterns includes calculating a difference between the MTT value of the first pattern and the MTT value of the second pattern.

8. The method of claim 6 , wherein calculating differences between ones of the MTT values respectively calculated for each of the plurality of types of test patterns includes calculating a difference between the MTT value of the second pattern and the MTT value of the third pattern.

9. The method of claim 1 , wherein performing the mask data preparation includes checking mask, mask process correction (MPC), fracture, and contrast enhancement by dose modulation (CED).

10. The method of claim 9 , wherein the mask process correction is performed using the mask process model.

11. A method of manufacturing an exposure mask comprising:

receiving MTO (Mask Tape Out) design data for a mask pattern;

performing mask data preparation with respect to the MTO design data to obtain first exposure data;

extracting two-dimensional contours of a plurality of types of test patterns in an exposure mask through simulation using a mask process model;

measuring first critical dimensions at measurement points of the contour for each of the plurality of types of test patterns by using a metrology algorithm, and averaging the first critical dimensions to obtain a first average critical dimension for each of the plurality of types of test patterns;

measuring second critical dimensions at the measurement points in consideration of dispersion in each of the plurality of types of test patterns using an inverse function of a standard normal distribution, and averaging the second critical dimensions in consideration of the dispersion to obtain a second average critical dimension for each of the plurality of types of test patterns;

calculating a mean to target (MTT) value as a difference between the second average critical dimension and a target critical dimension for each of the plurality of types of test patterns;

calculating differences between ones of the MTT values respectively calculated for each of the plurality of types of test patterns;

determining the first exposure data as exposure data when the differences between the ones of the MTT values are within a tolerance threshold;

determining a corrected first exposure data as the exposure data when one or more of the differences between the ones of the MTT values is outside of the tolerance threshold;

generating pixel data using the exposure data;

performing electron beam writing on a mask substrate based on the pixel data; and

forming an exposure mask by performing a development and etching process on the mask substrate.

12. The method of claim 11 , wherein measuring second critical dimensions at the measurement points in consideration of the dispersion in each of the plurality of types of test patterns, comprises:

generating a probability value of the second critical dimensions at the measurement points using a Gaussian random number generator; and

calculating a Normal Inverse Cumulative Distribution Function by combining the corresponding first average critical dimension and a dispersion using process monitoring information, which is expressed by the formula below

x=f ( x ) −1 ( p ,mean,sigma)

x: the second critical dimension in consideration of dispersion

f(x): Gaussian normal distribution function

p: Gaussian random number

Mean: the first average critical dimension

Sigma: the dispersion using process monitoring information.

13. The method of claim 11 , wherein the metrology algorithm is configured for use in measuring a critical dimension of an actual exposure pattern.

14. The method of claim 11 , wherein measuring the first critical dimensions at the measurement points of the contour for each of the plurality of types of test patterns by using the metrology algorithm comprises:

predetermining a region of interest (ROI) for measuring the first critical dimension of the contour; and

measuring the first critical dimension at each of the measurement points in the region of interest.

15. The method of claim 11 , wherein the plurality of types of test patterns include first patterns disposed in a scribe lane, second patterns disposed in a chip region, and a third pattern for correcting a dose of an electron beam.

16. A method of manufacturing an exposure mask comprising:

receiving MTO (Mask Tape Out) design data for a mask pattern;

performing mask data preparation with respect to the MTO design data to obtain first exposure data;

extracting two-dimensional contours of a plurality of types of test patterns in an exposure mask through simulation using a mask process model;

measuring first critical dimensions at measurement points of the contour for each of the plurality of types of test patterns by using a metrology algorithm, and averaging the first critical dimensions to obtain a first average critical dimension for each of the plurality of types of test patterns;

measuring second critical dimensions at the measurement points in consideration of dispersion in each of the plurality of types of test patterns using an inverse function of a standard normal distribution, and averaging the second critical dimensions in consideration of the dispersion to obtain a second average critical dimension for each of the plurality of types of test patterns;

calculating a first mean to target (MTT) value as a difference between the second average critical dimension and a target critical dimension for each of the plurality of types test patterns;

calculating differences between ones of the first MTT values respectively calculated for each of the plurality of types of test patterns;

determining the first exposure data as exposure data when the differences between the ones of the MTT values is within a first tolerance threshold;

determining a corrected first exposure data as the exposure data when one or more of the differences between the ones of the MTT values is outside of the first tolerance threshold;

forming an exposure mask using the exposure data;

performing an exposure process using the exposure mask to form actual exposure patterns;

measuring third critical dimensions at the measurement points for each of the plurality of types of test patterns in the actual exposure patterns by using a metrology algorithm, and averaging the third critical dimensions to obtain a third average critical dimension for each of the plurality of types of test patterns;

calculating a second MTT value as a difference between the third average critical dimension and a target critical dimension for each of the plurality of types of test patterns;

maintaining the exposure data when differences between ones of the second MTT values are within a second tolerance threshold; and

correcting the mask data preparation when one or more of the differences between the ones of the second MTT values is outside of the second tolerance threshold.

17. The method of claim 16 , wherein measuring second critical dimensions at the measurement points in consideration of the dispersion in each of the plurality of types of test patterns, comprises:

generating a probability value of the second critical dimensions at the measurement points using a Gaussian random number generator; and

calculating a Normal Inverse Cumulative Distribution Function by combining the corresponding first average critical dimension and a dispersion using process monitoring information, which is expressed by the formula below

x=f ( x ) −1 ( p ,mean,sigma)

x: the second critical dimension in consideration of dispersion

f(x): Gaussian normal distribution function

p: Gaussian random number

Mean: the first average critical dimension

Sigma: the dispersion using process monitoring information.

18. The method of claim 16 , wherein measuring the first or third critical dimensions at the measurement points of the contour for each of the plurality of types of test patterns by using the metrology algorithm comprises:

predetermining a region of interest (ROI) for measuring the first or third critical dimension of the contour; and

measuring the first or third critical dimension at each of the measurement points in the region of interest.

19. The method of claim 16 , wherein performing the mask data preparation includes checking mask, mask process correction (MPC), fracture, and contrast enhancement by dose modulation (CED).

20. The method of claim 19 , wherein correcting the mask data preparation includes correcting the mask process model in the mask process correction.

Assignments (1)

Priority Claims (1)

Continuity (1)

References Cited (9)