Semiconductor device having memory cell array divided into plural memory mats
An apparatus that includes a plurality of first memory mats each including a plurality of common column sections except for at least one associated column section, the at least one associated column sections being selected by respective column addresses which are different from one another; and a second memory mat including the at least one corresponding column sections therein.
1 . An apparatus comprising:
a plurality of first memory mats each having a plurality of first bit lines;
a second memory mat having a plurality of second bit lines and a plurality of third bit lines and
a column decoder circuit configured to:
when a column address is in a first address range, select a portion of the plurality of first memory mats excluding a first one of the plurality of first memory mats selected based on the column address and select the second memory mat instead of the first one of the plurality of first memory mats such that one of the plurality of second bit lines is selected; and
when the column address indicates a defective one of the plurality of first bit lines included in a second of the plurality of first memory mats, select a portion of the plurality of first memory mats excluding a second one of the plurality of first memory mats and select the second memory mat instead of the second one of the plurality of first memory mats such that one of the plurality of third bit lines is selected, wherein a number of first bit lines included in each of the first memory mats is smaller than an address space defined by the column address.
2 . The apparatus of claim 1 , wherein the first one of the plurality of first memory mats does not have a bit line corresponding to the one of the plurality of second bit lines.
3 . The apparatus of claim 2 , wherein the number of first bit lines included in each of the first memory mats is smaller than a sum of the second and third bit lines.
4 . The apparatus of claim 2 , wherein when the column address is in a second address range, the column decoder circuit is configured to select the plurality of first memory mats without selecting the second memory mat unless the column address indicates the defective one of the plurality of first bit lines.
5 . The apparatus of claim 4 , wherein, when a first address assigned to the defective one of the plurality of first bit lines is in the first address range, the column decoder circuit is configured to change a value of the column address supplied to the second one of the plurality of first memory mats when the column address indicates the first address.
6 . The apparatus of claim 5 , wherein the column decoder circuit is configured to change the value of the column address supplied to the second one of the plurality of first memory mats by inverting a logic level of one of bits constituting the column address.
7 . The apparatus of claim 4 , wherein, when both the defective one of the plurality of first bit lines included in the second one of the plurality of first memory mats and another defective one of the plurality of first bit lines included in a third one of the plurality of first memory mats are assigned to a second address, the column decoder circuit is configured to change a value of the column address supplied to the second and third ones of the plurality of first memory mats when the column address indicates the second address.
8 . The apparatus of claim 7 , wherein the column decoder circuit is configured to change the value of the column address supplied to the second one of the plurality of first memory mats by inverting a logic level of one of bits constituting the column address.
9 . The apparatus of claim 8 , wherein the column decoder circuit is configured to change the value of the column address supplied to the third one of the plurality of first memory mats by inverting logic levels of two of bits constituting the column address.
10 . An apparatus comprising:
a memory cell array divided into a plurality of memory mats including a plurality of first memory mats and a second memory mat;
a plurality of data buses each assigned to an associated one of the plurality of memory mats; and
a plurality of column switch groups each assigned to an associated one of the plurality of memory mats,
wherein each of the plurality of memory mats includes a plurality of bit lines,
wherein each of the plurality of column switch groups is configured to couple a selected one of the plurality of bit lines based on a column address to an associated one of the plurality of data buses,
wherein each of the plurality of first memory mats lacks at least one bit line to be selected by a predetermined value of the column address,
wherein the predetermined value assigned to each of the plurality of first memory mats is different from one another,
wherein a bit line included in the second memory mat is selected when the column address indicates the predetermined value assigned to one of the plurality of first memory mats, and wherein a number of bit lines included in each of the plurality of first memory mats is smaller than an address space defined by the column address.
11 . The apparatus of claim 10 ,
wherein the plurality of bit lines included in each of the plurality of first memory mats are divided into a first group selected when a value of the column address is in a first address range and a second group selected when a value of the column address is in a second address range, and
wherein the predetermined value assigned to each of the plurality of first memory mats is in the first address range.
12 . The apparatus of claim 11 , wherein each of the column switch groups assigned to the plurality of first memory mats is configured to couple the selected one of the plurality of bit lines to the associated one of the plurality of data buses when the value of the column address is in the second address range.
13 . The apparatus of claim 11 , wherein the second memory mat further includes a plurality of spare bit lines for substituting defective ones of the bit lines.
14 . An apparatus comprising:
a plurality of memory mats each having a plurality of bit lines, the plurality of memory mats including a plurality of first memory mats and a second memory mat; and
a column decoder circuit configured to:
when a column address is in a first address range, select one of the bit lines in each of the plurality of first memory mats except for one of the plurality of first memory mats and select one of the bit lines in the second memory mat; and
when the column address is in a second address range, select one of the bit lines in each of the plurality of first memory mats,
wherein a number of bit lines included in each of the first memory mats is smaller than an address space defined by the column address.
15 . The apparatus of claim 14 ,
wherein the column decoder circuit is configured to, when the column address is a first value included in the first address range, select a first one of the bit lines in each of the plurality of first memory mats except for a first one of the plurality of first memory mats and select a first one of the bit lines in the second memory mat, and
wherein the first one of the plurality of first memory mats lacks a bit line corresponding to the first value of the column address.
16 . The apparatus of claim 15 ,
wherein the column decoder circuit is configured to, when the column address is a second value included in the first address range, select a second one of the bit lines in each of the plurality of first memory mats except for a second one of the plurality of first memory mats and select a second one of the bit lines in the second memory mat, and
wherein the second one of the plurality of first memory mats has a bit line corresponding to the first value of the column address and lacks a bit line corresponding to the second value of the column address.
17 . The apparatus of claim 16 ,
wherein the column decoder circuit is configured to, when the column address is a third value included in the second address range, select a third one of the bit lines in each of the plurality of first memory mats, and
wherein the second memory mat lacks a bit line corresponding to the third value of the column address.
18 . The apparatus of claim 17 , wherein the second memory mat further includes a plurality of spare bit lines for substituting defective ones of the bit lines included in the plurality of first memory mats.
19 . The apparatus of claim 14 ,
wherein the plurality of memory mats further includes a plurality of third memory mats each having a plurality of bit lines corresponding to all the address space of the column address, and
wherein the column decoder circuit is configured to, when the column address is in the first address range, select one of the bit lines in each of the plurality of first memory mats except for one of the plurality of first memory mats, select one of the bit lines in the second memory mat, and select one of the bit lines in each of the plurality of third memory mats.