Systems and approaches for semiconductor metrology and surface analysis using secondary ion mass spectrometry
Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
1. A secondary ion mass spectrometry (SIMS) system, comprising:
a sample stage configured to support a wafer;
a primary ion source and ion optics configured to produce and direct a primary ion beam to the wafer;
an extraction lens directed at the sample stage, the extraction lens configured to extract secondary ions emitted from the wafer;
a detection unit; and
a charge compensation system configured to produce and direct an electron beam to the wafer, based on a wafer charge indication that is generated by the detection unit.
2. The SIMS system according to claim 1 , wherein the wafer charge indication is indicative of a location of the secondary ions at a location wherein the secondary ions are spread according to energy.
3. The SIMS system according to claim 2 , wherein the location is positioned between two current sensors of the detection unit, wherein the two current sensors are located between a first electrostatic analyzer (ESA) of the detection unit and a second ESA of the detection unit.
4. The SIMS system according to claim 3 , wherein the two current sensors comprise a high energy current sensor and a low energy current sensor.
5. The SIMS system according to claim 3 , comprising a magnetic second analyzer (MSA) that is downstream to the first and second ESAs.
6. The SIMS system according to claim 1 , wherein the charge compensation system is configured to control at least one of a current or power of the electron beam based on shifts in a kinetic energy of the secondary ions, as indicated by the wafer charge indicator.
7. The SIMS system according to claim 6 , wherein the shifts in the kinetic energy of the secondary ions are sensed by a low energy current sensor of the detection unit.
8. The SIMS system according to claim 1 , wherein the charge compensation system is configured to vary a current delivered to the surface of the wafer.
9. The SIMS system according to claim 1 , wherein the charge compensation system is configured to control at least one of a current or power of the electron beam based on a shift in a kinetic energy of the secondary ions and an overall energy distribution of the secondary ions.
10. The SIMS system according to claim 1 , wherein the wafer charge indication is generated by a low energy current sensor, and wherein the charge compensation system is configured to control at least one of a current or power of the electron beam based on whether the wafer charge indication is similar to a signal sensed by a current sensor that measures current through a conductive sample.
11. The SIMS system according to claim 1 , wherein the SIMS system is configured to check a calibration of the SIMS system and to update the calibration automatically.
12. A secondary ion mass spectrometry (SIMS) method, comprising:
producing and directing, by a primary ion source and ion optics, a primary ion beam to a wafer that is supported by a sample stage;
extracting, by an extraction lens directed at the sample stage, secondary ions emitted from the wafer;
generating, by a detection unit, a wafer charge indication; and
producing and directing, by a charge compensation system, an electron beam to the wafer, based on a wafer charge indication.
13. The SIMS method according to claim 12 , wherein the wafer charge indication is indicative of a location of the secondary ions at a location wherein the secondary ions are spread according to energy.
14. The SIMS method according to claim 13 , wherein the location is positioned between two current sensors of the detection unit, wherein the two current sensors are located between a first electrostatic analyzer (ESA) of the detection unit and a second ESA of the detection unit.
15. The SIMS method according to claim 14 , wherein the two current sensors comprise a high energy current sensor and a low energy current sensor.
16. The SIMS method according to claim 12 , comprising controlling, by the charge compensation system, at least one of a current or power of the electron beam based on shifts in a kinetic energy of the secondary ions, as indicated by the wafer charge indicator.
17. The SIMS method according to claim 16 , comprising sensing the shifts in the kinetic energy of the secondary ions by a low energy current sensor of the detection unit.
18. The SIMS method according to claim 12 , comprising controlling, by the charge compensation system, at least one of a current or power of the electron beam based on a shift in a kinetic energy of the secondary ions and an overall energy distribution of the secondary ions.
19. The SIMS method according to claim 12 , comprising generating the wafer charge indication by a low energy current sensor, and controlling, by the charge compensation system, at least one of a current or power of the electron beam based on whether the wafer charge indication is similar to a signal sensed by a current sensor that measures current through a conductive sample.
20. The SIMS method according to claim 12 , comprising checking, by the SIMS system, a calibration of the SIMS system and updating the calibration automatically.