Block failure protection for zone memory system
Various embodiments provide block failure protection for a memory sub-system that supports zones, such a memory sub-system that uses a RAIN (redundant array of independent NAND-type flash memory devices) technique for data error-correction. For some embodiments, non-parity zones of a memory sub-system that are filling up at a similar rate are matched together, a parity is generated for stored data from across the matching zones, and the generated parity is stored in a parity zone of the memory device.
1. A system comprising:
a memory device comprising a plurality of zones for storing data, each zone of the plurality of zones having a parity cursor and a write cursor, a parity cursor of an individual zone comprising a value that indicates how much space of the individual zone from a beginning of the individual zone is already parity protected, a write cursor of the individual zone comprising a value that indicates where data was last written to in the individual zone; and
a processing device, operatively coupled to the memory device, configured to perform operations comprising:
receiving a request to write a set of user data to a select non-parity zone of the plurality of zones;
writing the set of user data to the select non-parity zone in response to the request;
updating a write cursor of the select non-parity zone based on the writing of the set of user data;
determining whether the write cursor of the select non-parity zone has a greater value than that of a parity cursor of the select non-parity zone; and
in response to the write cursor of the select non-parity zone having a greater value than that of the parity cursor of the select non-parity zone:
scanning at least a portion of the plurality of zones to find a predetermined number of non-parity zones that have parity cursors with a similar value and that respectively have an individual write cursor that is greater than an individual parity cursor;
generating error correction parity data for the predetermined number of non-parity zones based on the similar value of the parity cursors of the predetermined number of non-parity zones; and
storing the error correction parity data to a select parity zone of the plurality of zones.
2. The system of claim 1 , wherein a parity cursor of the select parity zone has the similar value of the parity cursors of the predetermined number of non-parity zones.
3. The system of claim 2 , wherein the operations comprise:
selecting the select parity zone, from a set of parity zones in the plurality of zones, based on a parity cursor of the select parity zone.
4. The system of claim 1 , wherein the generating of the error correction parity data for the predetermined number of non-parity zones based on the similar value of the parity cursors of the predetermined number of non-parity zones comprises:
performing an exclusive OR (XOR) operation on stored data, from the predetermined number of non-parity zones, at the parity cursors of the predetermined number of non-parity zones.
5. The system of claim 1 , wherein the storing of the error correction parity data to the select parity zone of the plurality of zones comprises:
updating metadata based on storage of the error correction parity data to the select parity zone, the metadata mapping a group of non-parity zones with a parity zone.
6. The system of claim 1 , wherein the operations comprise:
maintaining a plurality of bins having different bin numbers, each individual bin of the plurality of bins comprising:
a candidate set of non-parity zones that have a parity cursor with a value corresponding to a bin number of the individual bin and that respectively have a single write cursor that is greater than a single parity cursor; and
a candidate set of parity zones that have a parity cursor with a value corresponding to the bin number of the individual bin, the scanning of the at least a portion of the plurality of zones is based on the plurality of bins.
7. The system of claim 1 , wherein the predetermined number of non-parity zones is a first predetermined number of non-parity zones, wherein the similar value is a first similar value, wherein the error correction parity data is first error correction parity data, and wherein the operations comprise:
in response to the scanning of the at least a portion of the plurality of zones not finding the first predetermined number of non-parity zones:
scanning the at least a portion of the plurality of zones to find a second predetermined number of non-parity zones that have parity cursors with a second similar value and that respectively have an individual write cursor that is greater than a threshold value;
generating second error correction parity data for the second predetermined number of non-parity zones based on the second similar value of the parity cursors of the second predetermined number of non-parity zones; and
storing the second error correction parity data to an identified parity zone of the plurality of zones.
8. The system of claim 1 , wherein the plurality of zones comprises a sub-plurality of parity zones, each parity zone of the sub-plurality of parity zones comprising one or more single-level cell (SLC) blocks, the sub-plurality of parity zones comprising the select parity zone.
9. The system of claim 1 , wherein the select non-parity zone comprises one or more quad-level cell (QLC) blocks.
10. The system of claim 1 , wherein the plurality of zones is defined according to a Non-Volatile Memory Express specification.
11. At least one non-transitory machine-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:
writing a set of user data to a select non-parity zone of a plurality of zones of a memory device, each zone of the plurality of zones having a parity cursor and a write cursor, a parity cursor of an individual zone comprising a value that indicates how much space of the individual zone from a beginning of the individual zone is already parity protected, a write cursor of the individual zone comprising a value that indicates where data was last written to in the individual zone;
updating a write cursor of the select non-parity zone based on the writing of the set of user data;
determining whether the write cursor of the select non-parity zone has a greater value than that of a parity cursor of the select non-parity zone; and
in response to the write cursor of the select non-parity zone having a greater value than that of the parity cursor of the select non-parity zone:
scanning at least a portion of the plurality of zones to find a predetermined number of non-parity zones that have parity cursors with a similar value and that respectively have an individual write cursor that is greater than an individual parity cursor;
generating error correction parity data for the predetermined number of non-parity zones based on the similar value of the parity cursors of the predetermined number of non-parity zones; and
storing the error correction parity data to a select parity zone of the plurality of zones.
12. The at least one non-transitory machine-readable storage medium of claim 11 , wherein a parity cursor of the select parity zone has the similar value of the parity cursors of the predetermined number of non-parity zones.
13. The at least one non-transitory machine-readable storage medium of claim 12 , wherein the operations comprise:
selecting the select parity zone, from a set of parity zones in the plurality of zones, based on a parity cursor of the select parity zone.
14. The at least one non-transitory machine-readable storage medium of claim 11 , wherein the generating of the error correction parity data for the predetermined number of non-parity zones based on the similar value of the parity cursors of the predetermined number of non-parity zones comprises:
performing an exclusive OR (XOR) operation on stored data, from the predetermined number of non-parity zones, at the parity cursors of the predetermined number of non-parity zones.
15. The at least one non-transitory machine-readable storage medium of claim 11 , wherein the storing of the error correction parity data to the select parity zone of the plurality of zones comprises:
updating metadata based on storage of the error correction parity data to the select parity zone, the metadata mapping a group of non-parity zones with a parity zone.
16. The at least one non-transitory machine-readable storage medium of claim 11 , wherein the operations comprise:
maintaining a plurality of bins having different bin numbers, each individual bin of the plurality of bins comprising:
a candidate set of non-parity zones that have a parity cursor with a value corresponding to a bin number of the individual bin and that respectively have a single write cursor that is greater than a single parity cursor; and
a candidate set of parity zones that have a parity cursor with a value corresponding to the bin number of the individual bin, the scanning of the at least a portion of the plurality of zones is based on the plurality of bins.
17. The at least one non-transitory machine-readable storage medium of claim 11 , wherein the predetermined number of non-parity zones is a first predetermined number of non-parity zones, wherein the similar value is a first similar value, wherein the error correction parity data is first error correction parity data, and wherein the operations comprise:
in response to the scanning of the at least a portion of the plurality of zones not finding the first predetermined number of non-parity zones:
scanning the at least a portion of the plurality of zones to find a second predetermined number of non-parity zones that have parity cursors with a second similar value and that respectively have an individual write cursor that is greater than a threshold value;
generating second error correction parity data for the second predetermined number of non-parity zones based on the second similar value of the parity cursors of the second predetermined number of non-parity zones; and
storing the second error correction parity data to an identified parity zone of the plurality of zones.
18. The at least one non-transitory machine-readable storage medium of claim 11 , wherein the plurality of zones comprises a sub-plurality of parity zones, each parity zone of the sub-plurality of parity zones comprising one or more single-level cell (SLC) blocks, the sub-plurality of parity zones comprising the select parity zone.
19. The at least one non-transitory machine-readable storage medium of claim 11 , wherein the select non-parity zone comprises one or more quad-level cell (QLC) blocks.
20. A method comprising:
writing a set of user data to a select non-parity zone of a plurality of zones of a memory device, each zone of the plurality of zones having a parity cursor and a write cursor, a parity cursor of an individual zone comprising a value that indicates how much space of the individual zone from a beginning of the individual zone is already parity protected, a write cursor of the individual zone comprising a value that indicates where data was last written to in the individual zone;
updating a write cursor of the select non-parity zone based on the writing of the set of user data;
determining whether the write cursor of the select non-parity zone has a greater value than that of a parity cursor of the select non-parity zone; and
in response to the write cursor of the select non-parity zone having a greater value than that of the parity cursor of the select non-parity zone:
scanning at least a portion of the plurality of zones to find a predetermined number of non-parity zones that have parity cursors with a similar value and that respectively have an individual write cursor that is greater than an individual parity cursor;
generating error correction parity data for the predetermined number of non-parity zones based on the similar value of the parity cursors of the predetermined number of non-parity zones; and
storing the error correction parity data to a select parity zone of the plurality of zones.