Redistribution substrate having embedded inductor
Disclosed are redistribution substrates and semiconductor packages including the same. The semiconductor package comprises a redistribution substrate, a semiconductor chip mounted on the redistribution substrate, and an inductor structure in the redistribution substrate and electrically connected to the semiconductor chip. The inductor structure includes an outer coil pattern including a plurality of vertical parts and a horizontal part that connects the plurality of vertical parts to each other, and an inner coil pattern between the vertical parts and electrically connected to the outer coil pattern. The horizontal part includes a first conductive layer, and a second conductive layer between the first conductive layer and the inner coil pattern. The second conductive layer has a thickness that is less than a thickness of the first conductive layer.
1 . A semiconductor package, comprising:
a redistribution substrate;
a semiconductor chip mounted on the redistribution substrate; and
an inductor structure in the redistribution substrate and electrically connected to the semiconductor chip,
wherein the inductor structure includes:
an outer coil pattern that includes a plurality of vertical parts extending in a vertical direction and an outer horizontal part extending in a horizontal direction and connecting the plurality of vertical parts to each other; and
an inner coil pattern between the vertical parts and electrically connected to the outer coil pattern,
wherein the outer horizontal part overlaps the inner coil pattern in the vertical direction and includes:
a first conductive layer; and
a second conductive layer between the first conductive layer and the inner coil pattern,
wherein the first conductive layer and the second conductive layer are electrically interconnected by a connection pattern contacting a top surface of the second conductive layer and a bottom surface of the first conductive layer,
wherein the connection pattern is spaced apart from the inner coil pattern in the horizontal direction to not overlap the inner coil pattern in the vertical direction, and
wherein the second conductive layer has a thickness that is less than a thickness of the first conductive layer.
2 . The semiconductor package of claim 1 , wherein the thickness of the first conductive layer is greater than a distance between the first conductive layer and the second conductive layer.
3 . The semiconductor package of claim 1 , wherein the thickness of the second conductive layer has a range from 0.4 times to 0.6 times the thickness of the first conductive layer.
4 . The semiconductor package of claim 1 , wherein a distance between the first conductive layer and the second conductive layer has a range from 0.2 times to 0.5 times the thickness of the first conductive layer.
5 . The semiconductor package of claim 1 ,
wherein the connection pattern at least partially overlaps at least one of the plurality of vertical parts.
6 . The semiconductor package of claim 1 , wherein the redistribution substrate includes:
a dielectric pattern;
a first pad on a first surface of the dielectric pattern;
a second pad on a second surface of the dielectric pattern; and
a redistribution pattern that connects the first pad to the second pad.
7 . The semiconductor package of claim 1 ,
wherein the inner coil pattern includes an inner horizontal part that extends in the horizontal direction parallel to the outer horizontal part, and
wherein the inner horizontal part has a thickness greater than the thickness of the first conductive layer.
8 . The semiconductor package of claim 1 , wherein the inductor structure includes:
a first terminal connected to the outer coil pattern; and
a second terminal connected to the inner coil pattern.
9 . The semiconductor package of claim 1 , wherein the outer coil pattern includes:
a third conductive layer that at least partially overlaps the outer horizontal part; and
a fourth conductive layer between the third conductive layer and the inner coil pattern,
wherein the fourth conductive layer has a thickness that is less than a thickness of the third conductive layer.
10 . The semiconductor package of claim 1 , wherein the redistribution substrate includes:
a first pad on a first surface of the redistribution substrate; and
a second pad on a second surface of the redistribution substrate,
wherein the inductor structure is electrically connected to the first pad and the second pad.
11 . A semiconductor package, comprising:
a redistribution substrate;
a semiconductor chip mounted on the redistribution substrate; and
an inductor structure in the redistribution substrate and electrically connected to the semiconductor chip,
wherein the inductor structure includes:
an inner coil pattern; and
an outer coil pattern that surrounds the inner coil pattern in at least one of a horizontal direction and a vertical direction,
wherein the outer coil pattern includes:
a first conductive layer; and
a second conductive layer between the first conductive layer and the inner coil pattern,
wherein the first conductive layer and the second conductive layer are electrically interconnected by a connection pattern contacting a top surface of the second conductive layer and a bottom surface of the first conductive layer,
wherein the connection pattern is spaced apart from the inner coil pattern in the horizontal direction to not overlap the inner coil pattern in the vertical direction, and
wherein a distance between the first conductive layer and the second conductive layer is less than a thickness of the first conductive layer.
12 . The semiconductor package of claim 11 , wherein the second conductive layer has a thickness that is less than the thickness of the first conductive layer.
13 . The semiconductor package of claim 11 ,
wherein the connection pattern has a thickness that is less than the thickness of the first conductive layer.
14 . The semiconductor package of claim 11 , further comprising a plurality of vertical parts connected to the second conductive layer,
wherein the inner coil pattern is between the plurality of vertical parts.
15 . The semiconductor package of claim 11 , wherein the inductor structure includes:
a first terminal connected to the outer coil pattern; and
a second terminal connected to the inner coil pattern.
16 . A redistribution substrate, comprising:
a dielectric pattern having a first surface and a second surface opposite to the first surface;
a first pad on the first surface;
a second pad on the second surface;
a redistribution pattern connecting the first pad to the second pad; and
an inductor structure between the first surface and the second surface, the inductor structure being electrically connected to at least one of the first pad and the second pad,
wherein the inductor structure includes:
an inner coil pattern comprising a plurality of inner horizontal parts extending in a horizontal direction and a plurality of inner vertical parts extending in a vertical direction and connecting the plurality of inner horizontal parts to each other; and
an outer coil pattern surrounding the inner coil pattern, the outer coil pattern comprising a plurality of outer horizontal parts and a plurality of outer vertical parts connecting the plurality of outer horizontal parts to each other,
wherein each of the plurality of outer horizontal parts includes:
a first conductive layer; and
a second conductive layer that has a thickness that is less than a thickness of the first conductive layer,
wherein the first conductive layer and the second conductive layer are electrically interconnected by a connection pattern contacting a top surface of the second conductive layer and a bottom surface of the first conductive layer, and
wherein the connection pattern is spaced apart from the inner coil pattern in the horizontal direction to not overlap the inner coil pattern in the vertical direction.
17 . The redistribution substrate of claim 16 , wherein the second conductive layer is between the first conductive layer and the inner coil pattern.
18 . The redistribution substrate of claim 16 , wherein a distance between the first conductive layer and the second conductive layer is less than the thickness of the first conductive layer.
19 . The redistribution substrate of claim 16 , wherein the inductor structure includes:
a first terminal connected to the outer coil pattern; and
a second terminal connected to the inner coil pattern.
20 . The redistribution substrate of claim 16 , wherein the inductor structure is between a bottom surface of the first pad and a top surface of the second pad.