Storage device and operating method thereof
A storage device may include: a storage comprising a plurality of memory blocks of memory cells for storing data; and a controller in communication with the storage to control operations of the storage and configured, in response to a write request from an external device to write data to the storage, to generate a first zone including one or more memory blocks and sequentially store the data from a first storage position of the first zone, and further configured, in response to a modification request from the external device to modify the data stored in the first zone, to identify a target memory block corresponding to the modification request and rewrite data to the target memory block.
1. A storage device comprising:
a storage comprising a plurality of memory blocks of memory cells for storing data; and
a controller in communication with the storage to control operations of the storage and configured, in response to a write request from an external device to write data to the storage, to generate a first zone including one or more memory blocks and sequentially store the data from a first storage position of the first zone, and further configured, in response to a modification request from the external device to modify the data stored in the first zone, to identify a target memory block corresponding to the modification request and rewrite data to the target memory block, wherein the controller further includes a zone division circuit configured, in response to the modification request for the first zone having a closed state, to divide the first zone into one or more sub-zones, each sub-zone corresponding to a memory block, and change a state of the target memory block from a closed state to an open state; and
a zone combining circuit configured, in response to a completion of the modification request, to combine the one or more sub-zones.
2. The storage device according to claim 1 , wherein the controller is further configured to reset the target memory block, and set a write pointer to point out a first storage position of the target memory block.
3. The storage device according to claim 1 , wherein the controller is further configured to change a state of the target memory block from the open state to the closed state after a completion of the rewrite operation.
4. The storage device according to claim 1 , wherein the controller is further configured to set a write pointer to point out a last data storage position of the first zone after a completion of the rewrite operation.
5. The storage device according to claim 1 , wherein each memory block corresponding to a minimum unit that data is erased at one time.
6. The storage device according to claim 1 , wherein the controller stores a zone management table including information, for each zone, an identifier (ID), a start logical address, a capacity indicating a total size of an area available for a write operation, a state indicating whether a corresponding zone is in the open state or the closed state, or a write pointer (WP) indicating an address of a particular position in a corresponding zone.
7. The storage device of claim 1 , wherein the storage includes a nonvolatile memory device.
8. The storage device of claim 1 , wherein the memory cells operate as a single level cell storing 1-bit data or a multi-level cell storing 2 or more-bit data.
9. The storage device of claim 1 , wherein the write request includes a write address, write data, and a size of the write data.
10. The storage device of claim 1 , wherein the controller is further configured to assign an identifier (ID) to the first zone.
11. A method of operating a storage device including a plurality of memory blocks of memory cells for storing data and a controller that controls operations of the storage device, comprising:
generating, by the controller, a first zone including one or more memory blocks in response to a write request received from an external device;
storing, by the controller, data such that the data is sequentially stored from a first storage position of the first zone, and closing the first zone;
dividing, by the controller, in response to a modification request from the external device to modify the data stored in the first zone, the first zone into one or more sub-zones, each sub-zone corresponding to a memory block, to identify a target memory block;
changing, by the controller, a state of the target memory block from a closed state to an open state;
rewriting, by the controller, data to the target memory block; and
combining, by the controller, in response to a completion of the modification request, the one or more sub-zones.
12. The method according to claim 11 , wherein the changing of the state of the target memory block comprises:
resetting the target memory block; and
setting a write pointer to point out a first storage position of the target memory block.
13. The method according to claim 11 , further comprising, after the rewriting of the data: changing the state of the target memory block to the closed state.
14. The method according to claim 11 , further comprising, after the rewriting of the data: setting a write pointer to point out a last data storage position of the first zone.
15. The method of claim 11 , wherein the storage device includes a nonvolatile memory device.
16. The method of claim 11 , wherein the memory cells operate as a single level cell storing 1-bit data or a multi-level cell storing 2 or more-bit data.
17. The method of claim 11 , wherein the write request includes a write address, write data, and a size of the write data.
18. The method of claim 11 , further comprising, after the generating of the first zone, assigning an identifier (ID) to the first zone.
19. The operating method of claim 11 , wherein each memory block corresponding to a minimum unit that data is erased at one time.